| |
|
 |
SANYO
|
| Part No. |
SBFP405D
|
| OCR Text |
...ctor-to-emitter voltage v ceo 4.5 v emitter-to-base voltage v ebo 1.5 v collector current i c 12 ma collector dissipation p c 55 mw junction...25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =5v, ... |
| Description |
Ultrahigh-Frequency Transistors
|
| File Size |
50.81K /
14 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SANYO
|
| Part No. |
SBFP405B
|
| OCR Text |
...ctor-to-emitter voltage v ceo 4.5 v emitter-to-base voltage v ebo 1.5 v collector current i c 12 ma collector dissipation p c 55 mw junction...25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =5v, ... |
| Description |
Ultrahigh-Frequency Transistors
|
| File Size |
54.60K /
15 Page |
View
it Online |
Download Datasheet |
| |
|
|
INFINEON[Infineon Technologies AG]
|
| Part No. |
BFR180W
|
| OCR Text |
...ector currents from 0.2 mA to 2.5 mA fT = 7 GHz F = 2.1 dB at 900 MHz
3
Junction temperature Ambient temperature Storage temperature...25 F Ceb 0.1 Cce 0.22 Ccb 0.3 0.45 fT 5 7 typ. max.
Unit
GHz pF
dB
1G ms
= |S21 / S12... |
| Description |
NPN Silicon RF Transistor
|
| File Size |
78.26K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
INFINEON[Infineon Technologies AG]
|
| Part No. |
BFP183
|
| OCR Text |
... TA Tstg
Value 12 20 20 2 65 5 250 150 -65 ... 150 -65 ... 150
Collector-emitter voltage Collector-emitter voltage Collector-base volt...25 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter cap... |
| Description |
RF-Bipolar - For low-noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA
NPN Silicon RF Transistor
|
| File Size |
77.41K /
7 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
