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  5.9ghz Datasheet PDF File

For 5.9ghz Found Datasheets File :: 808    Search Time::1.516ms    
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    BFP181W Q62702-F1501

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181W Q62702-F1501
OCR Text ...IC = 0 DC current gain IC = 5 mA, VCE = 8 V Semiconductor Group 2 Aug-30-1996 BFP 181W Electrical Characteristics at TA =...9GHz VCE = Parameter 24 dB 20 10V 3V 2V 16 14 12 10 8 6 1V 0.7V Power Gain Gma, Gms = f(IC) f =...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 59.99K  /  7 Page

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    BFP181 Q62702-F1271

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BFP181 Q62702-F1271
OCR Text ...IC = 0 DC current gain IC = 5 mA, VCE = 8 V Semiconductor Group 2 Dec-11-1996 BFP 181 Electrical Characteristics at TA = ...9GHz VCE = Parameter 24 10V 5V Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 18 dB ...
Description NPN Silicon RF Transistor (For low noise, high-gain broadband amplifiers at collector currents from 0.5mA to 12mA)
From old datasheet system

File Size 61.12K  /  7 Page

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    MGF7168C 7168CT_N

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF7168C 7168CT_N
OCR Text ... Input/Output Impedance ZI=4.5-j27.8 () : 1.88GHz ZL(max) = 3.3-j4.7 () : f=1.88GHz ZL(Po max)= 2.4-j5.8 () : f=1.88GHz max 1150mA(Po>32.8dBm) Pomax (33.8dBm) Conditions; Vd1=Vd2=3.2V Vgg=-2.0V Pin=10dBm MITSUBISHI ELECTRIC (...
Description UHF BAND GaAs POWER AMPLIFIER
From old datasheet system

File Size 75.54K  /  12 Page

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    MGF7169C 7169CT_N

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. MGF7169C 7169CT_N
OCR Text ... 30 25 Pout Pout (dBm) 20 15 10 5 0 -12 MGF7169C UHF BAND GaAs POWER AMPLIFIER 1400 1200 1000 Idt Id2 Id (mA) Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation 800 600 400 I...
Description From old datasheet system
UHF BAND GaAs POWER AMPLIFIER

File Size 348.24K  /  20 Page

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    njr
Part No. NJG1528KC1
OCR Text ...w) Orientation Mark 1 2 3 4 5 10 9 8 7 6 Pin connection 1. P1 2. VCTL1 3. GND 4. VCTL2 5. P2 6. P3 7. GND 8. GND 9. GND 10. P4 ...9GHz, PIN=31dBm f=0.9GHz, PIN=31dBm f=1.9GHz, PIN=25dBm f=0.9GHz, PIN=31dBm f=0.9GHz, PIN=31dBm f=1....
Description DPDT SWITCH GaAs MMIC

File Size 418.63K  /  10 Page

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    AD8314 AD8314ARM AD8314ARM-REEL AD8314ARM-REEL7 AD8314-EVAL ANALOGDEVICESINC.-AD8314-EVAL

Analog Devices, Inc.
AD[Analog Devices]
Part No. AD8314 AD8314ARM AD8314ARM-REEL AD8314ARM-REEL7 AD8314-EVAL ANALOGDEVICESINC.-AD8314-EVAL
OCR Text ...ency Response from 100 MHz to 2.5 GHz Temperature-Stable Linear-in-dB Response Accurate to 2.5 GHz Rapid Response: 70 ns to a 10 dB Step Low...9GHz 0.8 1.9GHz 0.6 2.5GHz ERROR - dB VUP - Volts 1 0 -1 -2 0.2 -3 -4 -70 1.9GHz 0.1GHz 2.5GHz 0....
Description 100 MHz-2500 MHz 45 dB RF Detector/Controller

File Size 274.61K  /  16 Page

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    BGB420 BGB420E6327

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BGB420 BGB420E6327
OCR Text ...Ptot Tj TOP TSTG Rth JS Value 3.5 30 3 1.5 0.7 120 150 -40 ..+85 -65 ... +150 <270 Unit V mA mA V mA mW C C C K/W Notes: For detailed sym...9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol GMA |S21|2 IL F50 min. 16.0 typ. 17.5 22 16...
Description Active Biased Transistor
Silicon MMICs - Mirror-Biased BFP 420 in SIEGET 25 Technology, Icmax = 30mA, SOT343
MMIC, LNA

File Size 436.18K  /  10 Page

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    BGB540

Infineon Technologies A...
INFINEON[Infineon Technologies AG]
Part No. BGB540
OCR Text ... Ptot Tj TA TSTG Rth JS Value 4.5 80 8 1.2 0.7 250 150 -65 ... +150 -65 ... +150 300 Unit V mA mA V mA mW C C C K/W Notes: For detailed s...9GHz f=1.8GHz f=0.9GHz f=1.8GHz f=0.9GHz f=1.8GHz Symbol Gms |S21|2 IL F50 P-1dB 12 10 OIP3 22 20 CC...
Description Active Biased RF Transistor
Silicon MMICs - Mirror-Biased BFP540 in SIEGET 45 Technology, Icmax = 80mA, SOT343

File Size 95.55K  /  10 Page

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    MGF7124A 7124A

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. MGF7124A 7124A
OCR Text ...r PO=26dBm,/4DQPSK * Small size 5.8x12.2x1.8mm * Light weight * Surface mount package * Low supply voltage operation VD=4.8V * Enable to con...9GHz,/4DQPSK VGdual=0/-4V,PO=26dBm,f=1.9GHz PO=26dBm,f(ACP)=600kHz, f=1.9GHz,/4DQPSK PO=26dBm,f(ACP)...
Description From old datasheet system
1.9GHz BAND AMPLIFIER MMIC

File Size 8.30K  /  1 Page

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    MGF7170AC

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. MGF7170AC
OCR Text ... 0 4 8 12 16 Pin (dBm) 15 10 5 0 -12 Fin=1750MHz Vd1=Vd2=3.0V Vg=2.6V CDMA evaluation Pin vs. Pout,Efficiency for CDMA 35 30 25 20 15 10 5 0 -12 Pout 70 60 50 40 30 20 10 Fin=1750MHz 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd1=Vd2=3.0V Vg=2...
Description UHF BAND GaAs POWER AMPLIFIER

File Size 301.85K  /  16 Page

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For 5.9ghz Found Datasheets File :: 808    Search Time::1.516ms    
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