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  80.90 Datasheet PDF File

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    2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2

NEC[NEC]
NEC Corp.
NEC, Corp.
Part No. 2SC5006 2SC5006-T1 2SC5006NE85619 2SC5006-T1-T2
OCR Text ... IEBO hFE fT Cre |S21e|2 NF 7.0 80 3.0 4.5 0.7 9.0 1.2 2.5 1.5 MIN. TYP. MAX. 1.0 1.0 160 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE =...90.7 -97.9 -104.5 -112.1 -118.6 -126.7 -134.1 -142.4 -149.2 -157.4 -163.5 -170.6 -175.6 5 2SC5...
Description    NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
SC70/µDFN, Single/Dual Low-Voltage, Low-Power µP Reset Circuits
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD NPN硅外延晶体管3引脚超超级迷你模
NPN epitaxial-type silicon transistor

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    2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2

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NEC[NEC]
NEC Corp.
Part No. 2SC5007 2SC5007-T1 2SC5007NE68119 2SC5007-T1-T2
OCR Text ...IEBO hFE fT Cre |S21e|2 NF 10.0 80 4.5 7.0 0.45 12.0 1.4 2.7 0.9 MIN. TYP. MAX. 0.8 0.8 160 GHz pF dB dB UNIT TEST CONDITIONS VCB = 10 V, IE...90.7 81.3 72.9 65.0 57.9 51.2 45.2 38.6 32.7 26.9 20.9 15.5 9.8 4.6 -1.3 -6.8 -12.2 -17.4 -22.9 -28....
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD
Discrete

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    2SC5009 2SC5009-T1 2SC5009-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5009 2SC5009-T1 2SC5009-T1-T2
OCR Text ... IB = 200 180 160 140 120 100 80 60 40 20 2 4 6 200 A A A A A A A A A A 8 hFE - DC Current Gain 100 50 20 10 0 1 ...90.7 -95.2 -99.4 -104.0 -110.4 -118.3 -127.7 -139.6 -152.7 -168.2 -178.3 -166.7 S12 ANG 153.6 15...
Description NPN epitaxial-type silicon transistor
NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

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    2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2

NEC[NEC]
NEC Corp.
Part No. 2SC5011 2SC5011-T1 2SC5011-T2 2SC5011-T1-T2
OCR Text ...ing hFE EB R26 50 to 100 FB R27 80 to 160 GB R28 125 to 250 2 2SC5011 TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs...90.2 86.0 82.2 78.5 75.6 72.2 69.5 67.0 64.4 61.7 58.9 56.3 53.7 51.9 49.5 46.9 45.1 42.5 40.8 39.3 ...
Description NPN epitaxial-type silicon transistor
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5014 2SC5014-T1 2SC5014-T2

NEC Corp.
NEC[NEC]
Part No. 2SC5014 2SC5014-T1 2SC5014-T2
OCR Text ...A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 5 VCE - Collector to Emitter Voltage - V GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT 10...90.3 -93.1 -93.5 -101.3 -103.4 -113.9 -115.1 -121.2 -127.8 -138.4 -147.3 -149.6 -158.2 -165.5 S12...
Description HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518

NEC[NEC]
NEC Corp.
Part No. 2SC5015 2SC5015-T1 2SC5015-T2 2SC5015NE68518
OCR Text ... A 160 A 140 A 120 A 100 A 80 A 60 A 40 A 20 A 2 4 6 8 500 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 3 V hFE - DC Current Gain...90.7 -97.4 -104.1 -110.7 -117.6 -124.9 -132.3 -140.3 -145.0 -151.9 -160.1 -167.5 -172.8 -177.4 175.5...
Description Discrete
HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

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    2SC5018

PANASONIC[Panasonic Semiconductor]
Matsshita / Panasonic
Part No. 2SC5018
OCR Text ...tion. Ta=25C 100 IB=1.0mA 0.9mA 80 0.8mA 0.7mA 0.6mA 60 0.5mA 0.4mA 40 0.3mA 0.2mA 0.1mA 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 2SC5018 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 Ta=75C 1 25C...
Description Transistor
Silicon NPN triple diffusion planer type(For high breakdown voltage high-speed switching)

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    2SC5032

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5032
OCR Text ...2 10 (2) (3) 0 0 20 40 60 80 100 120 140 160 0 0 2 4 6 8 10 12 0.3 1 3 10 30 100 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 hFE -- IC ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5034

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5034
OCR Text ... Power Transistors PC -- Ta 80 5 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C IB=300mA 250mA 200mA 3 150mA 100mA 2 80mA 60mA 40mA 1 10 0 0 20 40 60 80 100 120 140 160 (2) (3) 0 0 2 4 6 8 10 20...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5035

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5035
OCR Text ... Power Transistors PC -- Ta 80 8 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=2.0W) TC=25C 7 2SC5035 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 1 0.3 -25C 0.1 ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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