TMOS E-FET power Field Effect Transistor n-channel Enhancement-Mode Silicon Gate From old datasheet system TMOS power FET 3.0 AMPERES 1000 volts RDS(on) = 4.0 OHM 3 A, 1000 V, 4 ohm, n-channel, Si, power, mosfET, TO-220AB
16 A, 500 V, 0.4 ohm, n-channel, Si, power, mosfET From old datasheet system TMOS power FET 16 AMPERES 500 volts RDS(on) = 0.40 OHM TMOS E-FET power Field Effect Transistor D3PAK for Surface Mount n-channel Enhancement - Mode Silicon Gate