Description |
512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory(12V,CMOS 512K位整体擦除闪速存储器) IC-512K FLASH MEMORY 4-bit magnitude comparators 16-PDIP 0 to 70 Quad 2-input exclusive-OR gates 14-PDIP 0 to 70 Decade Counter 14-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-PDIP 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SOIC 0 to 70 Dual J-K Flip-Flops with Clear 14-SOIC 0 to 70 Quad bistable latches 16-SOIC 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-PDIP 0 to 70 4-bit magnitude comparators 16-SOIC 0 to 70 Quad bistable latches 16-PDIP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SO 0 to 70 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-SO 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SSOP 0 to 70 Dual D-type pos.-edge-triggered flip-flops with preset and clear 14-SOIC 0 to 70 8-Bit Identity/Magnitude Comparators 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PDIP32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PDSO32 8-Bit Identity/Magnitude Comparators 20-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 120 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SOIC 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 512 Kilobit (64 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory 64K X 8 FLASH 12V PROM, 90 ns, PQCC32 Quad 2-input exclusive-OR gates 14-SO 0 to 70 64K X 8 FLASH 12V PROM, 90 ns, PDIP32 8-Bit Identity/Magnitude Comparators (P=Q) with Enable 20-PDIP 0 to 70 64K X 8 FLASH 12V PROM, 150 ns, PDSO32 ER 14C 14#16 PIN RECP LINE 64K X 8 FLASH 12V PROM, 120 ns, PDSO32
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