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IDT[Integrated Device Technology] Integrated Device Technology, Inc.
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Part No. |
IDT71V65703 IDT71V65903 IDT71V65703S85PF IDT71V65703S85BQI IDT71V65703S85BQ IDT71V65903S85PFI IDT71V65903S80PF IDT71V65903S80BGI IDT71V65903S75PF IDT71V65703S75BG IDT71V65703S75BGI IDT71V65703S75BQ IDT71V65703S75BQI IDT71V65703S75PF IDT71V65703S75PFI IDT71V65703S80BG IDT71V65703S80BGI IDT71V65703S80BQ IDT71V65703S80BQI IDT71V65703S80PF IDT71V65703S80PFI IDT71V65703S85BG IDT71V65703S85BGI IDT71V65703S85PFI IDT71V65903S75BG IDT71V65903S75BGI IDT71V65903S75BQ IDT71V65903S75BQI IDT71V65903S75PFI IDT71V65903S80BG IDT71V65903S80BQ IDT71V65903S80BQI IDT71V65903S80PFI IDT71V65903S85BG IDT71V65903S85BGI IDT71V65903S85BQ IDT71V65903S85BQI IDT71V65903S85PF IDT71V65703S80PFI8 IDT71V65703S75BG8 IDT71V65703S75PF8 IDT71V65703S80BG8 IDT71V65703S80PF8 IDT71V65703S85BG8
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OCR Text |
... linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 3.3V power supply (5%) 3.3...7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 4... |
Description |
3.3V 256K x 36 ZBT Synchronous 3.3V I/O Flowthrough SRAM 256K x 36 512K x 18 3.3V Synchronous ZBT SRAMs 256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 3.3V I/O, Burst Counter Flow-Through Outputs 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K × 3612K采样× 18 3.3同步ZBT SRAM 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA165 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 512K X 18 ZBT SRAM, 8.5 ns, PBGA119 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PQFP100 256K x 36, 512K x 18 3.3V Synchronous ZBT SRAMs 256K X 36 ZBT SRAM, 7.5 ns, PBGA165
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File Size |
492.00K /
26 Page |
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IDT
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Part No. |
IDT71V65802 IDT71V65602
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OCR Text |
... linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 3.3V power supply (5%) 2.5...7 1.7 -0.3
(1)
Typ. 3.3 2.5 0
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Max. 3.465 2.625 0 VDD+0.3 VDDQ+0.3 0.7
Unit... |
Description |
256K x 36, 512K x 18 3.3V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
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File Size |
499.29K /
26 Page |
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IDT
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Part No. |
IDT71V67803
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OCR Text |
...y
A0-A18 CE CS0, CS1 OE GW BWE BW1, BW2, BW3, BW4(1) CLK ADV ADSC ADSP LBO ZZ I/O0-I/O31, I/OP1-I/OP4 VDD, VDDQ VSS Address Inputs Chip Ena...7, I/OP1, BW2 controls I/O8-15, I/OP2, etc. Any active byte write causes all outputs to be disabled.... |
Description |
256K X 36, 512K X 18 3.3V Synchronous SRAMs
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File Size |
510.91K /
23 Page |
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Sanyo Denki Co., Ltd. GSI Technology, Inc.
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Part No. |
GS8342D09E-250I GS8342D09GE-200I GS8342D09E-167I GS8342D08GE-250 GS8342D09E-300 GS8342D09GE-167 GS8342D08E-300I GS8342D36E-300I GS8342D36E-200 GS8342D08E-167
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OCR Text |
...sa (256mb) nc/sa (72mb) w bw2 k bw1 r sa mcl/sa (144mb) cq b q27 q18 d18 sa bw3 k bw0 sa d17 q17 q8 c d27 q28 d19 v ss sa nc sa v ss d16 q...7 8 9 10 11 a cq mcl/sa (144mb) sa w bw1 k nc r sa mcl/sa (72mb) cq b nc q9 d9 sa nc k bw0 sa nc n... |
Description |
36Mb SigmaQuad-II Burst of 4 SRAM 36Mb SigmaQuad-II Burst of 4 SRAM 1M X 36 STANDARD SRAM, 0.45 ns, PBGA165 36Mb SigmaQuad-II Burst of 4 SRAM 4M X 8 STANDARD SRAM, 0.45 ns, PBGA165 36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.5 ns, PBGA165 36Mb SigmaQuad-II Burst of 4 SRAM 4M X 9 STANDARD SRAM, 0.45 ns, PBGA165
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File Size |
866.44K /
37 Page |
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Cypress Semiconductor Corp.
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Part No. |
CY7C1345 7C1345
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OCR Text |
... BW0 controls DQ [7:0] and DP0, BW1 controls DQ[15:8] and DP1, BW2 controls DQ[23:16] and DP2, and BW3 controls DQ [31:24] and DP3. See Write Cycle Description table for further details. Advance Input, used to advance the on-chip address co... |
Description |
128K x 36 Synchronous Flow-Through 3.3V Cache RAM(3.3V 128K x 36 同步流通式高速缓冲RAM) 128K的36同步流动,通过3.3V的高速缓存内存(3.3 128K的36同步流通式高速缓冲内存) From old datasheet system
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File Size |
272.33K /
16 Page |
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NEC, Corp.
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Part No. |
UPD44164084F5-E40-EQ1 UPD44164364F5-E50-EQ1
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OCR Text |
... 9 10 11 a /cq v ss a r, /w /bw1 /k nc /ld a v ss cq b nc dq9 nc a nc k /bw0 a nc nc dq8 c nc nc nc v ss a a0 a1 v ss nc dq7 nc ...7 8 9 10 11 a /cq v ss nc r, /w /bw2 /k /bw1 /ld a v ss cq b nc dq27 dq18 a /bw3 k /bw0 a nc... |
Description |
18M-BIT DDRII SRAM 4-WORD BURST OPERATION 1800万位的SRAM 4条DDRII字爆发运
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File Size |
394.03K /
32 Page |
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IDT
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Part No. |
IDT71T75602 IDT71T75802S100PFI8 IDT71T75802S100PF8
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OCR Text |
... linear) Individual byte write (BW1 - BW4) control (May tie active) Three chip enables for simple depth expansion 2.5V power supply (5%) 2.5...7 1.7 -0.3(1) Typ. 2.5 2.5 0
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Recommended Operating Temperature and Supply Voltage... |
Description |
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM *NEW* 2.5V 512K X 36 ZBT Synchronous 2.5V I/O Pipeline SRAM 512K x 36, 1M x 18 2.5V Synchronous ZBT? SRAMs 2.5V I/O, Burst Counter Pipelined Outputs
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File Size |
497.65K /
25 Page |
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Price and Availability
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