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Electronic Theatre Controls, Inc.
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| Part No. |
BUZ905
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| OCR Text |
dsx drain C source voltage v gss gate C source voltage i d continuous drain current i d(pk) body drain diode p d total power dissipation @ t...1.0c/w mechanical data dimensions in mm 39.0 1.1 30.2 0.15 16.9 0.15 r 4.0 0.1 r 4.4 0.2 ? 1.0 ... |
| Description |
P-Channel Power MOSFET For Audio Application(P沟道功率型MOS场效应管(用于音频电路)) P沟道功率MOSFET为音频应用性（P沟道功率型马鞍山场效应管（用于音频电路）
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| File Size |
41.37K /
4 Page |
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it Online |
Download Datasheet
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ST Microelectronics
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| Part No. |
STPIC6C595
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| OCR Text |
...tions min. typ. max. unit v (br)dsx drain-to-source breakdown voltage i d = 1ma 33 37 v v sd source-to-drain diode forward voltage i f = 100 ma 0.85 1.2 v v oh high level output voltage ser out i oh = -20 av cc = 4.5v 4.4 4.49 v i ... |
| Description |
POWER LOGIC 8-BIT SHIFT REGISTER
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| File Size |
315.38K /
17 Page |
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it Online |
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Cirrus Logic, Inc.
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| Part No. |
CS61584A-IQ3
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| OCR Text |
...ce - 20 - k w sensitivity below dsx-1 (0 db = 2.4 v) - -13.6 - db loss of signal threshold - 0.3 - v data decision threshold t1, dsx-1 (note 7) (note 8) t1, fcc part 68 and e1 (note 9) (note 10) 60 55 45 40 65 - 50 - 70 75 55 60 % of peak... |
| Description |
DUAL T1/E1 LINE INTERFACE DATACOM, PCM TRANSCEIVER, PQFP64
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| File Size |
646.34K /
52 Page |
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it Online |
Download Datasheet |
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SMSC, Corp.
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| Part No. |
LB32N16
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| OCR Text |
...te: http://www.semelab.co.uk v dsx drain C source voltage v gss gate C source voltage i d continuous drain current i d(pk) body drain diode...1 1.5 12 10 10 26 * pulse test: pulse width = 300 m s , duty cycle 2%. v gs = C10v lb32n16 i d = 1... |
| Description |
Smartpack N-Channel Power MOSFET Module For Aduio Application(Vdsx:160V,Vgss:14V,Id:32A)(智能封装N沟道功率MOSFET模块,音频应用(Vdsx:160V,Vgss:14V,Id:32A)) Smartpack N沟道功率MOSFET模块Aduio应用（Vdsx60V，Vgss14V的，身份证：32A条）（智能封沟道功率MOSFET的模块，音频应用（Vdsx60V，Vgss14V的，身份证：2A））
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| File Size |
20.61K /
2 Page |
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it Online |
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Supertex, Inc.
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| Part No. |
LND150K1-G LND150N8-G TO-243AA
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| OCR Text |
...ameter value drain-to-source bv dsx drain-to-gate bv dgx gate-to-source 20v operating and storage temperature -55 o c to +150 o c solderi...1.6mm from case for 10 seconds. ordering information device package options bv dsx /bv dgx (v) r ds(... |
| Description |
N-Channel Depletion-Mode DMOS FET
13 mA, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB GREEN PACKAGE-3
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| File Size |
596.07K /
7 Page |
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it Online |
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