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Mitsubishi Electric Corporation
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| Part No. |
RM200DA-24F
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| Description |
200 A, 1200 V, SILICON, RECTIFIER DIODE
Fast Recovery Diode Modules, F Series (for Bipolar speed switching)
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| File Size |
56.79K /
3 Page |
 View
it Online |
Download Datasheet
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Powerex Power Semiconductor...
POWEREX[Powerex Power Semiconductors]
Powerex, Inc.
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| Part No. |
CM600DU-24F
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| Description |
Dual IGBTMOD 600 Amperes/1200 Volts 600 A, 1200 V, N-CHANNEL IGBT
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| File Size |
62.55K /
4 Page |
View
it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM300DU-24F
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| Description |
Trench Gate Design Dual IGBTMOD?/a> 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 300 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 300 Amperes/1200 Volts
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| File Size |
92.98K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM150DU-24F
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| Description |
Trench Gate Design Dual IGBTMOD?/a> 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD⑩ 150 Amperes/1200 Volts
Trench Gate Design Dual IGBTMOD 150 Amperes/1200 Volts
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| File Size |
90.31K /
4 Page |
View
it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM600HU-24F
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| Description |
Trench Gate Design Single IGBTMOD?/a> 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD⑩ 600 Amperes/1200 Volts
Trench Gate Design Single IGBTMOD 600 Amperes/1200 Volts
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| File Size |
97.16K /
4 Page |
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it Online |
Download Datasheet |
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POWEREX[Powerex Power Semiconductors]
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| Part No. |
CM100TU-24F
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| Description |
Trench Gate Design Six IGBTMOD100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD⑩ 100 Amperes/1200 Volts
Trench Gate Design Six IGBTMOD?/a> 100 Amperes/1200 Volts
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| File Size |
126.08K /
4 Page |
View
it Online |
Download Datasheet |
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