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  hfet Datasheet PDF File

For hfet Found Datasheets File :: 127    Search Time::1.25ms    
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    TGA2925-SG

TriQuint Semiconductor
Part No. TGA2925-SG
OCR Text ... 8 V @ 0.75 A (Quiescent) 0.5 m hfet Technology 2 lead Cu-alloy base package 802.16 and WiMax S-Band Power Amplifiers Primary Applications Product Description The TGA2925-SG HPA provides 11 dB of gain, 5.6 W of output power at 3.5 GH...
Description 5.6 Watt 3.5GHz Packaged HPA

File Size 262.18K  /  10 Page

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    CGD1042H09

NXP Semiconductors
Part No. CGD1042H09
OCR Text ...nction Field Effect Transistor (hfet) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features High output power capability Excellent linea...
Description 1 GHz, 23 dB gain high output power doubler
   1 GHz, 23 dB gain high output power doubler

File Size 83.39K  /  7 Page

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    CGY888C

NXP Semiconductors
Part No. CGY888C
OCR Text ...nction Field Effect Transistor (hfet) GaAs MMIC. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features I I I I I I I I I I High gain Excellent line...
Description 34 dB, 870 MHz GaAs push-pull forward amplifier

File Size 42.88K  /  7 Page

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    XP1050-QJ11

Mimix Broadband
Part No. XP1050-QJ11
OCR Text ... device is manufactured in GaAs hfet device technology with BCB wafer coating to enhance ruggedness and repeatability of performance. The XP1050-QJ is well suited for Point-to-Point Radio, LMDS, SATCOM and VSAT applications. Absolute Max...
Description 177.0-9.0 GHz Linear Power Amplifier

File Size 1,318.20K  /  10 Page

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    TriQuint Semiconductor,Inc.
Part No. TGA2922-SG
OCR Text ...-9 V @ 480 mA (Quiescent) 0.5 m hfet Technology 2 lead Cu base SMT package 802.11a WLAN Bridge Amplifiers U-NII Band HPA C-Band Pt-Pt and Pt-Multi Pt Radio Primary Applications Product Description The TGA2922-SG HPA provides 11dB of ...
Description 2 Watt 802.11a Packaged Amplifier

File Size 314.91K  /  12 Page

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    TriQuint Semiconductor,Inc.
Part No. TGA2923-SG
OCR Text ...: 8 V @ 1.2 A (Quiescent) 0.5 m hfet Technology 2 lead Cu-alloy base and internally partially matched package Primary Applications * 802.16 Broadband Wireless * WiMAX Fixtured Measured Performance Bias Conditions: Vd = 8 V, Idq =1.2...
Description 10 Watt MMDS Packaged Amplifier

File Size 280.54K  /  11 Page

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    TriQuint Semiconductor, Inc.
Part No. TGA8334-SCC
OCR Text ... = VG1 = -0.5 V. For Low Noise, hfet and pHEMT material, VGS = VG1 = -0.25 V. For LNBECOLC, use VGS = VG1 = -0.10 V. VDS fixed at 2.0 V, VGS is swept to bring IDS to 0.5 mA/mm. Drain fixed at ground, source not connected (floating), 1.0 mA/...
Description
File Size 318.06K  /  12 Page

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    CGD944C

NXP Semiconductors
Part No. CGD944C
OCR Text ...Hetero Field Effect Transistor (hfet) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features High output capability Excellent linearity E...
Description 870 MHz, 25 dB gain power doubler amplifier

File Size 81.65K  /  7 Page

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    CGD942C

NXP Semiconductors
Part No. CGD942C
OCR Text ...Hetero Field Effect Transistor (hfet) GaAs dies. CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features High output capability Excellent linearity E...
Description 870 MHz, 23 dB gain power doubler amplifier

File Size 81.71K  /  7 Page

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    TriQuint Semiconductor,Inc.
Part No. TGA2925-SG
OCR Text ... 8 V @ 0.75 A (Quiescent) 0.5 m hfet Technology 2 lead Cu-alloy base package 802.16 and WiMax S-Band Power Amplifiers Primary Applications Product Description The TGA2925-SG HPA provides 11 dB of gain, 5.6 W of output power at 3.5 GH...
Description 5.6 Watt 3.5GHz Packaged HPA

File Size 269.24K  /  10 Page

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For hfet Found Datasheets File :: 127    Search Time::1.25ms    
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