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  ingaas-pin preamp Datasheet PDF File

For ingaas-pin preamp Found Datasheets File :: 194    Search Time::1.313ms    
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    EUDYNA[Eudyna Devices Inc]
Part No. FRM5W231LT FRM5W231KT
OCR Text InGaAs-APD/preamp Receiver FEATURES * Data rate up to 2.5Gb/s * -32dBm typ. sensitivity * 30m active area APD chip with GaAs preamplifier ...Pin <-20dBm, AC-Coupled, RL=50, M=3 to 15, -3dBm from 1MHz AC-Coupled, RL=50, Average within BW 2.48...
Description InGaAs-APD/preamp Receiver

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    EUDYNA[Eudyna Devices Inc]
Part No. FRM5W232LY
OCR Text InGaAs-APD/preamp Receiver FEATURES * Data Rates up to 2.7Gb/s * High Sensitivity: -34 dBm (typ.) * Differential Electrical Output * Pream...Pin=-30dBm, M=10, from 1MHz Pin=-30dBm, M=10, from 500MHz to 1.75GHz up to 1.75GHz up to 2.5GHz Aver...
Description InGaAs-APD/preamp Receiver

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    EUDYNA[Eudyna Devices Inc]
Part No. FRM5W621LT FRM5W621KT
OCR Text InGaAs-APD/preamp Receiver FEATURES * * * * * Data rate up to 622Mb/s High Responsibility: typ. 0.85A/W at 1,550nm 30m active area APD chi...Pin <=-20dBm, AC-Coupled, RL=50, M=3 to 15, -3dBm from 1MHz AC-Coupled, RL=50, Average within BW 622...
Description InGaAs-APD/preamp Receiver

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    Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
Part No. FU-319SPA-W6M20 319SPA-V6M20 319SPA-W6M20 319SPA-X6M20 FU-319SPA-6M20 FU-319SPA-V6M20
OCR Text ... FU-319SPA-6M20/V6M20/W6M20 InGaAs APD preamp MODULE FOR THE 1.31 mm AND 1.55 mm WAVELENGTH RANGE DESCRIPTION FU-319SPA-6M20/V6M20/W6M2...Pin=-27 dBm,M=10, Single end, (Note 1) Vod_max AC,RL=50W,Pin=-10dBm, 75 150 310 Maximum output volta...
Description INGAAS APD preamp MODULE FOR THE 1.31 UM AND 1.55 UM WAVELENGTH RANGE 铟镓砷APD的前置放大器模块,用.31微米.55 UM的波长范

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. FU-319SPA-X6M2X FU-319SPA-V2M0 FU-319SPA-V2M1 FU-319SPA-W2M0 FU-319SPA-W2M1
OCR Text ... DESCRIPTION FU-319SPA-x6M2x is InGaAs avalanche photodiode module with SiGe preamplifier, designed for use in highspeed, long haul optical ...Pin=-27 dBm,M=10, Single end, (Note 1) Vod_max AC,RL=50,Pin=-10dBm, Maximum output voltage 75 150 31...
Description APD-TIA MODULE FOR LONG WAVELENGTH BAND

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    Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. FU-319SPP-C6
OCR Text InGaAs PD preamp MODULE FOR THE 1.31 m AND 1.55 m WAVELENGTH RANGE DESCRIPTION FU-319SPP-C6 is InGaAs pin photodiode module with GaAs preamplifier, designed for use in highspeed, long haul optical communication systems. The coaxial package...
Description InGaAs PD preamp MODULE FOR THE 1.31 mm AND 1.55 mm WAVELENGTH RANGE 铟镓砷放电前置放大器模块.31毫米.55毫米波长范围
InGaAs PD preamp MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE

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    Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
Part No. FU-319SPP-CV6
OCR Text InGaAs PD preamp MODULE FOR THE 1.31 m AND 1.55 m WAVELENGTH RANGE DESCRIPTION FU-319SPP-CV6 is InGaAs pin photodiode module with GaAs preamplifier, designed for use in highspeed, long haul optical communication systems. The coaxial packag...
Description InGaAs PD preamp MODULE FOR THE 1.31 um AND 1.55 um WAVELENGTH RANGE 铟镓砷放电前置放大器模块,用.31微米.55微米波长范围

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    Hamamatsu Photonics K.K.
HAMAMATSU[Hamamatsu Corporation]
Part No. G8605-25 G8605 G8605-11 G8605-12 G8605-13 G8605-15 G8605-21 G8605-22 G8605-23
OCR Text InGaAs PIN photodiode G8605 series Thermoelectrically cooled NIR (near infrared) detector with low noise and high-speed response InGaAs PIN photodiodes have small terminal capacitance for high-speed response and also feature high shunt...
Description Aluminum Snap-In Capacitor; Capacitance: 390uF; Voltage: 420V; Case Size: 30x40 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 25x35 mm; Packaging: Bulk 铟镓砷PIN光电二极
Aluminum Snap-In Capacitor; Capacitance: 680uF; Voltage: 420V; Case Size: 35x50 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 220uF; Voltage: 420V; Case Size: 30x30 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 470uF; Voltage: 420V; Case Size: 30x45 mm; Packaging: Bulk
Aluminum Snap-In Capacitor; Capacitance: 330uF; Voltage: 420V; Case Size: 35x30 mm; Packaging: Bulk
InGaAs PIN photodiode

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    Hamamatsu Photonics
HAMAMATSU[Hamamatsu Corporation]
Part No. G8925-24 G8925 G8925-21 G8925-22 G8925-23
OCR Text InGaAs PIN photodiode with preamp G8925 series High-speed response: 10 Gbps, pigtail type G8925-21 Features Applications l High-speed response: 10 Gbps l Supply voltage: 5 V l Wide dynamic range: -18 to 0 dBm l Small size l Fi...
Description InGaAs PIN photodiode with preamp

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
http://
Part No. HFBR-5805T HFBR-5805 HFBR-5805A HFBR-5805AT
OCR Text ...03 and HFBR-5805 series utilize InGaAs PIN photodiodes coupled to a custom silicon transimpedance preamplifier IC. These are packaged in the optical subassembly portion of the receiver. These PIN/preamplifier combinations are coupled to a c...
Description HFBR-5805T · 155 Mbit/s MMF (2km) 1x9 ST Transceiver for SONET/SDH,ATM (OC-3)
HFBR-5805 · 155 Mbit/s MMF (2km) 1x9 SC Duplex Transceiver for SONET/SDH,ATM (OC-3)
HFBR-5805AT · 155Mb/s Multi Mode Optical Transceivers with ST connector, -10C to 85C
HFBR-5805A · 155Mb/s Multi Mode Optical Transceivers with SC connector, -10C to 85C
HFBR-5805/5805T/5805A/5805AT ATM Transceivers for SONET OC-3/SDH STM-1 in Low Cost 1 x 9 Package Style
HFBR-5805/5805T/5805A/5805AT ATM Transceivers for SONET OC-3/SDH STM-1 in Low Cost 1 x 9 Package Style

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For ingaas-pin preamp Found Datasheets File :: 194    Search Time::1.313ms    
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