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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-710651-A4 AMIS-710651
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| OCR Text |
... 3.0MHz (PRATE = 3.0MHz) and an integration time of 1.75ms/line. The sensor photo-site density is 23.64elements/mm. The module has one analog video output, two clock inputs, clock and start pulse (CP and SP), one reference voltage input for... |
| Description |
Color CIS Module
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| File Size |
187.25K /
9 Page |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-720233-B AMIS-720233
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| OCR Text |
...r the line scanning rate or the integration time. It is determined by the time interval between two SPs. Fclk stands for the input clock frequency. For Fclk > 2.0MHz see Note 3 and the Section 5. Vpavg = Vp(n)/Npixels (average level in one ... |
| Description |
Contact Image Sensor
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| File Size |
394.17K /
12 Page |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-720341-A AMIS-720341
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| OCR Text |
... initializing the pixel for its integration process cycle. The signal pixels Vp(n) is referenced to its dark level as seen in Figure 6.
Figure 6: Single Pixel Video Output
AMI Semiconductor - May 06, M-20570-001 www.amis.com
5
A... |
| Description |
Contact Image Sensor
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| File Size |
1,029.29K /
16 Page |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-720639
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| OCR Text |
...ow-Green LED source, at minimum integration time 277sec @ 5MHz clock rate Test circuit used only the amplifier of Note 4 Test circuit used only the amplifier in Note 4 Test circuit see Note 4 Test circuit see Note 4
(3)
Vpavg
(4)
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| Description |
600dpi CIS Sensor Chip
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| File Size |
285.82K /
10 Page |
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it Online |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-720649
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| OCR Text |
...sor to be read out while photon integration is taking place. These features are approached through the use of an integrate and hold cell, located at each pixel site. Each pixel's charge is read from its storage site as the sensor's shift re... |
| Description |
Contact Image Sensor
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| File Size |
267.45K /
10 Page |
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it Online |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-732512 AMIS-732128 AMIS-732256
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| OCR Text |
...e to UV damage Low dark current integration time up to nine seconds at room temperature integration time extended to hours by cooling High linearity Low power dissipation (less than 1mW) Geometrical structure for enhanced stability and regi... |
| Description |
50μm-pitch Wide Aperture Spectroscopic Photodiode Arrays
50レm-pitch Wide Aperture Spectroscopic Photodiode Arrays
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| File Size |
169.73K /
9 Page |
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it Online |
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AMI[AMI SEMICONDUCTOR]
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| Part No. |
AMIS-734512 AMIS-734024 AMIS-734256
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| OCR Text |
...e to UV damage Low dark current integration time up to 11 seconds at room temperature integration time extended to hours by cooling Anti-blooming circuitry High linearity Low power dissipation (less than 1mW) Geometrical structure for enhan... |
| Description |
25μm-pitch Wide Aperture Spectroscopic Photodiode Arrays
25レm-pitch Wide Aperture Spectroscopic Photodiode Arrays
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| File Size |
181.13K /
9 Page |
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it Online |
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Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
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| Part No. |
AN817
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| OCR Text |
... ASIC or system microprocessor. integration of these two discrete power components into a single power package, such as the ChipFETt, reduces size and simplifies the assembly.
Charger
To this end, moving away from a separate Schottky di... |
| Description |
A Discrete Approach to Battery Charging for Cellular Phones
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| File Size |
37.07K /
5 Page |
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it Online |
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TE Connectivity, Ltd.
ATMEL[ATMEL Corporation]
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| Part No. |
ATA5429 ATA5423_0601 ATA5425 ATA5428 ATA54230601
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| OCR Text |
...Very Low System Cost Very High integration: no external filters High Output Power: +10 dBm High Sensitivity up to 40 kbps / FSK High Selectivity High Blocking Performances Small Implementations are Possible thanks to the High Integrat... |
| Description |
SMART RF INTEGRATED WIRELESS DATA TRANSCEIVER 智能射频集成无线数据收发
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| File Size |
178.84K /
2 Page |
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it Online |
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Price and Availability
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