Part Number Hot Search : 
AP4085I AN531 A1284 AP4413GM RKC4R BA651 SFBDY62 DAP236U
Product Description
Full Text Search
  j s Datasheet PDF File

For j s Found Datasheets File :: 153393    Search Time::1.89ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRGBC30MD2-s
OCR Text ...5C (unless otherwise specified) j V(BR)CEs V(BR)CEs/Tj VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Temperature Coeff. o...s VCE = 100V, I C = 16A -- -- 250 A VGE = 0V, V CE = 600V -- -- 2500 VGE = 0V, V CE = 600V, T j = 15...
Description Aluminum Polymer sMT Capacitor; Capacitance: 470uF; Voltage: 4V; Case size: 10x8 mm; Packaging: Tape & Reel 绝缘栅双极型晶体管,超快软恢复二极管(VCEs和\u003d 600V的,@和VGE \u003d 15V的,集成电路\u003d 16A条)
INsULATED GATE BIPOLAR TRANsIsTOR WITH ULTRAFAsT sOFT RECOVERY DIODE(Vces=600V, @Vge=15V, Ic=16A)

File Size 382.00K  /  8 Page

View it Online

Download Datasheet





    IRGBC40K-S

International Rectifier
Part No. IRGBC40K-s
OCR Text ... maximum power dissipation 65 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 3...s notes: ? v cc =80%(v ces ), v ge =20v, l=10h, r g = 10 w , ( see fig. 13a ) ? repetitive ...
Description Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体

File Size 112.52K  /  7 Page

View it Online

Download Datasheet

    ABRACON CORP
Part No. AsM-4.000MHZ-N-C-s-T
OCR Text ... equipment. ? industry standard j-leaded terminals. ? hcmos and ttl compatible ? extended temperature -40 c to 85 c option ? plastic molde...s 45/55%@1/2vdd s1 45/55%@1.4vdd asm - frequency - - - - operating temp. range overall frequen...
Description CRYsTAL OsCILLATOR, CLOCK, 4 MHz, HCMOs/TTL OUTPUT

File Size 796.62K  /  2 Page

View it Online

Download Datasheet

    SBP13005-S

SemiWell Semiconductor
Part No. sBP13005-s
OCR Text ... absolute maximum ratings (t j = 25 unless otherwise specified) symbol parameter condition value units v ces collector-emit...s electrical characteristics ( tc = 25 unless otherwise noted) symbol items conditions ...
Description High Voltage Fast switching NPN

File Size 160.74K  /  4 Page

View it Online

Download Datasheet

    PS21964-S

Mitsubishi Electric Semiconductor
Part No. Ps21964-s
OCR Text ... THERMAL REsIsTANCE symbol Rth(j-c)Q Rth(j-c)F Parameter junction to case thermal resistance (Note 3) Condition Inverter IGBT part (per 1/6...s s s s s mA switching times Collector-emitter cut-off current VCE = VCEs CONTROL (PROTE...
Description 600V/15A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

File Size 88.83K  /  8 Page

View it Online

Download Datasheet

    ABRACON CORP
Part No. AsM-4.9152MHZ-s
OCR Text j - l e a d e d ? p l a s t i c m o l d e d ? s u r f a c e m o u n t c r y s t a l c l o c k o s c i l l a t o r s a s m a s m - f r e q u e n c y - t e m p e r a t u r e - f r e q u e n c y s t a b i l i t y - ...
Description CRYsTAL OsCILLATOR, CLOCK, 4.9152 MHz, HCMOs/TTL OUTPUT

File Size 525.54K  /  1 Page

View it Online

Download Datasheet

    IRG4BC30S-S IRG4BC30SS IRG4BC30S-STRL IRG4BC30S-STRR

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRG4BC30s-s IRG4BC30ss IRG4BC30s-sTRL IRG4BC30s-sTRR
OCR Text ...t ( A ) D uty c yc le: 50% T j = 125C T s ink = 90C G ate drive as s pecified P ow e r D is sip atio n = 21 W Cla m p vo ltag e: 80 % of rate d 30 s q u a re w a v e : 6 0% of rate d volta ge 20 I 10 Id e a l d io d e s ...
Description TRANsIsTOR | IGBT | N-CHAN | 600V V(BR)CEs | 18A I(C) | TO-263AB 晶体管| IGBT的|正陈| 600V的五(巴西)国际消费电子展| 18A条一(c)|63AB
INsULATED GATE BIPOLAR TRANsIsTOR standard speed IGBT(Vces=600V, Vce(on)typ.=1.4V, @Vge=15V, Ic=18A) 绝缘栅双极晶体管IGBT的标准速度(VCEs和\u003d 600V电压的Vce(on)典\u003d.4V,@和VGE \u003d 15V的,集成电路\u003d 18A条)
INsULATED GATE BIPOLAR TRANsIsTOR standard speed IGBT(Vces=600V Vce(on)typ.=1.4V @Vge=15V Ic=18A)
600V DC-1 kHz (standard) Discrete IGBT in a D2-Pak package

File Size 150.68K  /  9 Page

View it Online

Download Datasheet

    IP4221CZ6-S

NXP Semiconductors
Part No. IP4221CZ6-s
OCR Text ... 6. snPb eutectic process (from j-sTD-020C) Package reflow temperature (C) Volume (mm3) < 350 < 2.5 2.5 Table 7. 235 220 Lead-free process ...s_1 (c) NXP B.V. 2008. All rights reserved. Product data sheet Rev. 01 -- 29 April 2008 ...
Description Dual UsB 2.0 integrated quad with EsD protection to IEC 61000-4-2, level 4 (Pb-free)

File Size 71.05K  /  13 Page

View it Online

Download Datasheet

    PS21962-S

Mitsubishi Electric Semiconductor
Part No. Ps21962-s
OCR Text ... THERMAL REsIsTANCE symbol Rth(j-c)Q Rth(j-c)F Parameter junction to case thermal resistance (Note 3) Condition Inverter IGBT part (per 1/6...s s s s s mA switching times Collector-emitter cut-off current VCE = VCEs CONTROL (PROTE...
Description 600V/5A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion

File Size 88.77K  /  8 Page

View it Online

Download Datasheet

For j s Found Datasheets File :: 153393    Search Time::1.89ms    
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

▲Up To Search▲

 




Price and Availability




 
Price & Availability of j s

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X
0.55965209007263