...hannel filter
Linear to A or m
+
HWX
AOUT
D/A
+
Channel filter
A or to linear
HWR TYPE
ACOmIN ACOmOUT BBIN BC...34 35 36 37 38 39 40 41 42 43
HWX TYPE RTIN1 RTIN0 RC3 RC2 RC1 BCUT ALm PD DGND2 DGND1 SUB AGND A...
...
10
0
1
RD
Po
m
s
s
s
ID - Drain Current - A
20
V) ID(pulse) PW
VGS= -20 V -10 V
er
m
-5
-1.0
di
ss
ip
DC
at io n Li m
-0.1 -1
TC = 25 C Single Pulse
itt
ed
0
...
...20
Drain Current
=
0 s m 10 ms s
1
(1 sh
(T
10
s
at
ion
ot)
10
Operation in this area is limited by R DS(on)
c=
25
C
)
0
50
100
150 Tc (C)
200
Ta = 25 C -0.1 -0.1 -0.3 -1
-3
...
Description
Silicon P Channel mOS FET High Speed Power Switching
...rain Current
1.0
0.5
1 m s = 10 DC (1 m Op sh s ot) er at Operation in ion this area is limited by R DS(on)
PW
Ta = 25 C
0
50
100
150 Ta (C)
200
Ambient Temperature
-0.1 -0.3 -1 -3 -10 -30 -100 Drain to S...
Description
Silicon P-Channel mOS FET Silicon P Channel mOS FET High Speed Power Switching
...00 -30
PW
DC Op er
10
0 s m 10 ms s
1
(1 sh
(T
s
10
Channel Dissipation
Drain Current
=
20
-10 -3 -1 -0.3
at
10
Operation in this area is limited by R DS(on)
ion
ot)
c=
25
C
)
0
...
Description
Silicon P Channel mOS FET High Speed Power Switching
...3 -1 -0.3
10 s 10 0 PW 1 s = m 1 s DC 0 m s
Op
20
Operation in this area is limited by R DS(on)
(1 er sh ot) (T atio c= n 25 C )
0
50
100
150 Tc (C)
200
Case Temperature
Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -...
Description
Silicon P Channel mOS FET High Speed Power Switching
...3 -1 -0.3
10 s 10 0 PW 1 s = m 1 s DC 0 m s
Op
20
Operation in this area is limited by R DS(on)
(1 er sh ot) (T atio c= n 25 C )
0
50
100
150 Tc (C)
200
Case Temperature
Ta = 25 C -0.1 -0.1 -0.3 -1 -3 -10 -...
Description
Silicon P-Channel mOS FET Silicon P Channel mOS FET High Speed Power Switching Power switching mOSFET
...RD
S
1000
N) (O
LI
m
IT
1m s(
10 0 s
1s ho t)
DC
IDR (A)
ID (A)
500 Coss 100 50 20
PD (W)
1
OP ER AT IO N
60 50 40 30 20
ith in fin ite he at
4 2
VGS = 0V 5V,10V
0.5
sin k
Crs...
...n
1m s 3m s 10 30 ms 10 ms 0 m s
Lim ite d
0.1 1
TC = 25C Single Pulse 10 100 1 000 VDS - Drain to Source Voltage - V
TRANSIENT THERmAL RESISTANCE vs. PULSE WIDTH
Rth(t) - Transient Thermal Resistance - C/W
100
Rth(CH-...
Description
Switching N-channel power mOS FET industrial use N沟道 开关功率场效应晶体工业 From old datasheet system N-ch Power mOS FET
...to any other output where N and m are either LH or HL. 2. Skew times are valid only under same test conditions (temperature, VCC, loading, etc.,).
AC WAVEFORmS
Ian, Ibn Vm tPHL Vm tPLH Yn Ian, Ibn Vm tPLH Vm tPHL
Yn
Vm
Vm
Vm...