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  medium power general use non-i Datasheet PDF File

For medium power general use non-i Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    Mitsubishi Electric Corporation
Part No. RM30TC-40
Description MITSUBISHI DIODE MODULES HIGH VOLTAGE medium power general use INSULATED TYPE

File Size 52.46K  /  3 Page

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    2N4922 2N4921 2N4923 2N4921-D

ONSEMI[ON Semiconductor]
Part No. 2N4922 2N4921 2N4923 2N4921-D
Description medium-power Plastic NPN Silicon Transistors
1 AMPERE general PURPOSE power TRANSISTORS 30 WATTS

File Size 106.96K  /  8 Page

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    RM30TB-M RM30TB-H

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RM30TB-M RM30TB-H
Description 122 x 32 pixel format, Compact LCD size
medium power general use INSULATED TYPE

File Size 45.31K  /  3 Page

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    RM50D2Z-40

Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
Part No. RM50D2Z-40
Description 50 A, 2000 V, SILICON, RECTIFIER DIODE
HIGH VOLTAGE medium power general use INSULATED TYPE

File Size 43.33K  /  3 Page

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    MITEQ, Inc.
MITEQ INC
Part No. AMF-5B-040080-15-25P AMF-4B-040080-15-25P AMF-6B-040080-15-25P AMF-6B-120180-50-28P AMF-4F-200300-90-20P AMF-6F-200300-90-20P AMF-3D-001040-28-24P-1 AMF-2B-080180-80-27P AMF-1D-005020-60-23P-1 AMF-4F-275310-90-23P AMF-2D-10M-2G-30-23P AMF-3B-120180-50-25P AMF-3B-020040-15-25P AMF-3B-020080-55-27P AMF-4B-020080-45-27P AMF-4B-020040-13-25P AMF-2D-10M-4G-32-22P AMF-4B-010020-20-33P MITEQINC-AMF-1B-040080-80-28P MITEQINC-AMF-9B-140145-37P-WG AMF-6F-275310-90-25P AMF-8F-275310-90-29P AMF-5B-120180-60-28P AMF-4D-001060-27-23P AMF-4B-120180-70-27P AMF-8F-275310-90-25P AMF-8F-370410-90-27P AMF-2B-120180-80-27P
Description 4000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
12000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
20000 MHz - 30000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
100 MHz - 4000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
8000 MHz - 18000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
500 MHz - 2000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
27500 MHz - 31000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
10 MHz - 2000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
2000 MHz - 4000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
2000 MHz - 8000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
10 MHz - 4000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
1000 MHz - 2000 MHz RF/MICROWAVE WIDE BAND HIGH power AMPLIFIER
100 MHz - 6000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER
37000 MHz - 41000 MHz RF/MICROWAVE WIDE BAND medium power AMPLIFIER

File Size 35.31K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. 2N4920 2N4919 2N4918 2N491-D
Description medium-power Plastic PNP Silicon Transistors
general.PURPOSE power TRANSISTORS

File Size 113.91K  /  8 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RM10TA-24 RM10TA-2H
Description 122 x 32 pixel format, LED or EL Backlight available
HIGH VOLTAGE medium power general use INSULATED TYPE

File Size 75.50K  /  3 Page

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    Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. TM100 TM100SZ-M
Description 40 characters x 2 Lines, 5x7 Dot Matric Character and Cursor
medium power general use non-iNSULATED TYPE

File Size 53.68K  /  4 Page

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    RM60DZ-24 RM60DZ-2H RM60CZ-24 RM60CZ-2H

Mitsubishi Electric Semiconductor
Mitsubishi Electric, Corp.
Part No. RM60DZ-24 RM60DZ-2H RM60CZ-24 RM60CZ-2H
Description 60 A, 1200 V, SILICON, RECTIFIER DIODE
HIGH VOLTAGE medium power general use INSULATED TYPE 高压中功率常规使用绝缘型

File Size 44.28K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. BZT52C30 BZT52C9V1 BZT52C2V0
Description Planar Die Construction 500mW power Dissipation on Ceramic PCB general Purpose, medium Current

File Size 100.76K  /  2 Page

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