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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG12N60C3D FN4043
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49123. The diode used in anti parallel with the IGBT is the development type TA49061. The IGBT is ideal for many high voltage switchi... |
| Description |
24 A, 600 V, N-CHANNEL IGBT, TO-247
From old datasheet system
24A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
24A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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| File Size |
97.17K /
7 Page |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG30N60A4D FN4830
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode used in anti-parallel is the development type TA49373. This IGBT is ideal for many high voltage switching applicatio... |
| Description |
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
99.33K /
9 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG30N60A4 FN4829
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential. This device has been optimized for h... |
| Description |
600V/ SMPS Series N-Channel IGBT
600V, SMPS Series N-Channel IGBT
From old datasheet system
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| File Size |
91.70K /
8 Page |
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it Online |
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http://
INTERSIL[Intersil Corporation]
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| Part No. |
HGTG30N60B3D FN4446
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49170. The diode used in anti-parallel with the IGBT is the development type TA49053. The IGBT is ideal for many high voltage switchi... |
| Description |
From old datasheet system
60A 600V UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
60A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
60A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
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| File Size |
108.05K /
7 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGTG30N60B3 FN4444
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls... |
| Description |
60A, 600V, UFS Series N-Channel IGBT
From old datasheet system
60A/ 600V/ UFS Series N-Channel IGBT
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| File Size |
104.18K /
7 Page |
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it Online |
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Intersil
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| Part No. |
HA-2510_883 HA-2512_883 FN3697
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| OCR Text |
...and wide bandwidth operation in moderately powered, internally compensated, monolithic devices. In addition to excellent dynamic characteristics, these dielectrically isolated amplifiers also offer low offset current and high input impedanc... |
| Description |
High Slew Rate Operational Amplifiers
From old datasheet system
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| File Size |
63.13K /
8 Page |
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it Online |
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Intersil, Corp.
INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S7N60A4DS HGTP7N60A4D HGTG7N60A4D FN4827
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching applicatio... |
| Description |
AML42 Series, Solid State Indicator, Square, Compact Style, Lighted, 1 LED, Snap in panel mount 34 A, 600 V, N-CHANNEL IGBT, TO-263AB
600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
600V SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
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| File Size |
91.22K /
8 Page |
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it Online |
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INTERSIL[Intersil Corporation]
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| Part No. |
HGT1S7N60C3DS HGTP7N60C3D FN4150
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is developmental type TA49115. The diode used in anti-parallel with the IGBT is developmental type TA49057. The IGBT is ideal for many high voltage switching a... |
| Description |
From old datasheet system
14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
14A/ 600V/ UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes
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| File Size |
175.01K /
7 Page |
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it Online |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
HGTG40N60B HGTG40N60B3
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| OCR Text |
...-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls... |
| Description |
70A, 600V, UFS Series N-Channel IGBT
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| File Size |
117.04K /
8 Page |
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it Online |
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