moulding pdf Datasheet P9 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 12016 SP765107 100LVEL 143ZC SC4793 TK16A55D B1495 74AUP1G
	Product Description
	Full Text Search

moulding Datasheet PDF File

For moulding Found Datasheets File :: 308 Search Time::2.109ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |

				IRF[International Rectifier]
Part No.	IRLIZ24N
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET
File Size	236.58K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLIZ34NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET Power MOSFET
File Size	252.63K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLIZ34N
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
File Size	101.35K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRLIZ44NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	250.53K / 8 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	LIS3L02AQ3TR LIS3L02AQ3
OCR Text	...ing the moving parts during the moulding phase of the plastic encapsulation. When an acceleration is applied to the sensor the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This imbalanc...
Description	MEMS INERTIAL SENSOR: 3-Axis - ?g/?g LINEAR ACCELEROMETER MEMS INERTIAL SENSOR: 3-Axis - ?g/?g LINEAR ACCELEROMETER
File Size	171.59K / 13 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	LIS3L02AS4 E-LIS3L02AS4 E-LIS3L02AS4TR
OCR Text	...ing the moving parts during the moulding phase of the plastic encapsulation. When an acceleration is applied to the sensor the proof mass displaces from its nominal position, causing an imbalance in the capacitive half-bridge. This imbalanc...
Description	MEMS INERTIAL SENSOR 3-Axis - ±2g/±6g LINEAR ACCELEROMETER MEMS INERTIAL SENSOR 3-Axis - 【2g/【6g LINEAR ACCELEROMETER
File Size	163.30K / 14 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI1310NPBF IRFI1310NPBF-15
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	ADVANCED PROCESS TECHNOLOGY HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	236.53K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFI520NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	254.93K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFIZ24NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	Advanced Process Technology HEXFET㈢ Power MOSFET HEXFET? Power MOSFET
File Size	207.62K / 9 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFIZ46NPBF
OCR Text	...al-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO...
Description	HEXFET? Power MOSFET HEXFET㈢ Power MOSFET
File Size	222.51K / 9 Page	View it Online	Download Datasheet

For moulding Found Datasheets File :: 308 Search Time::2.109ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |