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  rg-122 u Datasheet PDF File

For rg-122 u Found Datasheets File :: 625    Search Time::3.844ms    
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    LCP1521SRL LCP1521S LCP152SD

STMicroelectronics
Part No. LCP1521SRL LCP1521S LCP152SD
OCR Text ... equal to: I surge = V surge / (Rg + Rs) With V surge = peak surge voltage imposed by the standard. Rg = series resistor of the surge genera...122 3.10 0.114 0.118 0.122 1.31 0.044 0.051 0.037 0.018 Inches Typ. Max. 0.040 0.002 0.030 0.75 0...
Description PROGRAMMABLE TRANSIENT VOLTAGE SuPPRESSOR FOR SLIC PROTECTION

File Size 140.83K  /  9 Page

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    apt
Part No. APT10050LVR
OCR Text ...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 6600 595 290 335 29 165 16 13 59 8 7900 830 430 500 45 250 32 26 90 16 ns n...122) 3.48 (.137) 5.79 (.228) 6.20 (.244) Drain 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69...
Description TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,21A I(D),TO-264AA

File Size 46.74K  /  4 Page

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    IRFI9520N

International Rectifier
Part No. IRFI9520N
OCR Text ...DD = -50V --- ID = -4.0A ns --- RG = 22 --- RD = 12, See Fig. 10 Between lead, --- 6mm (0.25in.) nH G from package --- and center of die co...122) -B13.70 (.540) 13.50 (.530) C D A 1.40 (.055) 3X 1.05 (.042) 2.54 (.100) 2X 0.90 (.035) 3X 0...
Description HEXFET? Power MOSFET

File Size 99.36K  /  8 Page

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    IXYS
Part No. IXFH15N100 IXFH15N100Q
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q VDSS = ID25 = RDS(on) = trr 250 ns 1000 V...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 141.23K  /  3 Page

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    IXYS[IXYS Corporation]
Part No. IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80
OCR Text ... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C,...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS

File Size 159.97K  /  4 Page

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    ONSEMI[ON Semiconductor]
Part No. MGY25N120D_D ON1933 MGY25N120D
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ...
Description Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED

File Size 167.51K  /  6 Page

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    ONSEMI[ON Semiconductor]
Part No. MGY25N120_D ON1934 MGY25N120
OCR Text ...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125 L F 2 PL G W D 3 PL 0.25 (0.010) M J H YQ...
Description Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system

File Size 149.81K  /  5 Page

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    Intersil, Corp.
http://
INTERSIL[Intersil Corporation]
Part No. HGT1S20N60C3S HGTP20N60C3 HGTG20N60C3 FN4492
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...122 28 24 151 55 295 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 320 550 700 uNITS V V ...
Description 45A, 600V, uFS Series N-Channel IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
45A/ 600V/ uFS Series N-Channel IGBT

File Size 80.63K  /  7 Page

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    INTERSIL[Intersil Corporation]
Part No. HGTG20N60C3D FN4494
OCR Text ... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...122 28 24 151 55 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 550 700 uNITS V A mA V V V...
Description 45A/ 600V/ uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
45A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system

File Size 81.67K  /  7 Page

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    IXYS, Corp.
IXYS[IXYS Corporation]
Part No. IXFX24N100 IXFK24N100F IXFK24N100 IXFKB24N100 IXFKB24N100F IXFX24N100F
OCR Text ...he Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 trr 250 ns ...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ...
Description HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
HiPerRF Power MOSFETs 24 A, 1000 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA

File Size 98.12K  /  2 Page

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