| |
|
 |
apt
|
| Part No. |
APT10050LVR
|
| OCR Text |
...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT
6600 595 290 335 29 165 16 13 59 8
7900 830 430 500 45 250 32 26 90 16
ns n...122) 3.48 (.137) 5.79 (.228) 6.20 (.244)
Drain
25.48 (1.003) 26.49 (1.043)
2.29 (.090) 2.69... |
| Description |
TRANSISTOR,MOSFET,N-CHANNEL,1KV V(BR)DSS,21A I(D),TO-264AA
|
| File Size |
46.74K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
IXYS
|
| Part No. |
IXFH15N100 IXFH15N100Q
|
| OCR Text |
... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C
IXFH 15N100Q IXFK 15N100Q IXFT 15N100Q
VDSS = ID25 = RDS(on) =
trr 250 ns
1000 V...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ... |
| Description |
Discrete MOSFETs: HiPerFET Power MOSFETS
|
| File Size |
141.23K /
3 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS[IXYS Corporation]
|
| Part No. |
IXFK27N80 IXFK25N80 IXFN27N80 IXFN25N80
|
| OCR Text |
... 100 A/s, VDD VDSS, TJ 150C, RG = 2 TC = 25C Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C,...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ... |
| Description |
CAP,Polypropylene,60uF,10-% Tol,10 % Tol
HiPerFETTM Power MOSFETs
MOSFET with FAST Intrinsic Diode
Discrete MOSFETs: HiPerFET Power MOSFETS
|
| File Size |
159.97K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
ONSEMI[ON Semiconductor]
|
| Part No. |
MGY25N120D_D ON1933 MGY25N120D
|
| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Case - Diode -- Junction to Ambient M...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125
L
F 2 PL G
W D 3 PL 0.25 (0.010)
M
J H YQ... |
| Description |
Insulated Gate Bipolar Transistor with Anti-Parallel Diode
From old datasheet system
IGBT & DIODE IN TO-264 25 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
|
| File Size |
167.51K /
6 Page |
View
it Online |
Download Datasheet |
| |
|
|
ONSEMI[ON Semiconductor]
|
| Part No. |
MGY25N120_D ON1934 MGY25N120
|
| OCR Text |
...0 Vdc, VGE = 15 Vdc, TJ = 125C, RG = 20 ) Thermal Resistance -- Junction to Case - IGBT -- Junction to Ambient Maximum Lead Temperature for ...122 0.137 0.085 0.093 0.240 0.256 0.110 0.125
L
F 2 PL G
W D 3 PL 0.25 (0.010)
M
J H YQ... |
| Description |
Insulated Gate Bipolar Transistor 38 A, 1200 V, N-CHANNEL IGBT, TO-264
IGBT IN TO-264 A @ 90 38 A @ 25 1200 VOLTS SHORT CIRCuIT RATED
From old datasheet system
|
| File Size |
149.81K /
5 Page |
View
it Online |
Download Datasheet |
| |
|
|
Intersil, Corp.
http://
INTERSIL[Intersil Corporation]
|
| Part No. |
HGT1S20N60C3S HGTP20N60C3 HGTG20N60C3 FN4492
|
| OCR Text |
... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10.
Electrical Specifications
PARAMETER
TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...122 28 24 151 55 295 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 320 550 700 uNITS V V ... |
| Description |
45A, 600V, uFS Series N-Channel IGBT 40 A, 600 V, N-CHANNEL IGBT, TO-220AB
From old datasheet system
45A/ 600V/ uFS Series N-Channel IGBT
|
| File Size |
80.63K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
INTERSIL[Intersil Corporation]
|
| Part No. |
HGTG20N60C3D FN4494
|
| OCR Text |
... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10.
Electrical Specifications
PARAMETER
TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...122 28 24 151 55 500 500 MAX 250 5.0 1.8 1.9 6.3 250 110 145 32 28 210 98 550 700 uNITS V A mA V V V... |
| Description |
45A/ 600V/ uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
45A, 600V, uFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
From old datasheet system
|
| File Size |
81.67K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| Part No. |
IXFX24N100 IXFK24N100F IXFK24N100 IXFKB24N100 IXFKB24N100F IXFX24N100F
|
| OCR Text |
...he Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr
IXFX 24N100F VDSS = 1000 V IXFK 24N100F ID25 = 24 A RDS(on) = 0.39 trr 250 ns
...122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 ... |
| Description |
HiPerRF Power MOSFETs 24 A, 1000 V, 0.39 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
HiPerRF Power MOSFETs 24 A, 1000 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
|
| File Size |
98.12K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
