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rg-400 u Datasheet PDF File

For rg-400 u Found Datasheets File :: 7274 Search Time::1.844ms
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				Toshiba Semiconductor Hitachi Semiconductor
Part No.	2SJ539
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.16 0.23 5.5 400 220 75 10 45 65 50 -1.2 70 Max -- -- -10 10 -2.0 0...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.99K / 9 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ547
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 3.5 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.16 0.23 5.5 400 220 75 10 45 65 50 -1.2 70 Max -- -- -10 10 -2.0 0...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.45K / 9 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ555
OCR Text	...Tc = 25C 3. Value at Tch = 25C, Rg 50 Electrical Characteristics (Ta = 25C) Item Symbol Min -60 20 -- -- -1.0 -- -- 27 -- -- -- -- -- ...400 5 2SJ555 Reverse Drain Current vs. Source to Drain Voltage Maximum Avalanche Energy vs. C...
Description	Silicon P Channel MOS FET High Speed Power Switching
File Size	52.90K / 9 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ557 2SJ557-T2B 2SJ557-T1B
OCR Text	...0 V ID = -1.0 A VGS(on) = -10 V RG = 10 VDD= -10 V ID = -2.5 A VGS = -4.0 V IF = 2.5 A, VGS = 0 V IF = 2.5 A, VGS = 0 V di/dt = 50 A / s -1...400 1 75 C 125 C 300 TA = 125C 75C 0.1 200 25C -25C 0.01 -0.01 -0.1 -...
Description	Pch enhancement type MOS FET P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
File Size	60.99K / 8 Page	View it Online	Download Datasheet

				NEC, Corp. NEC Corp. NEC[NEC]
Part No.	2SK3299 2SK3299-S 2SK3299-ZJ D14060EJ1V0DS00 2SK3299-ZJ-E2 2SK3299-Z-E1 2SK3299-Z
OCR Text	...tarting Tch = 25C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V The information in this document is subject to change without notice. Before us...400 0.1 0.01 0.1 1 10 100 ID - Drain Current - A QG - Gate Charge - nC 4 ...
Description	Switching N-channel power MOS FET industrial use N沟道开关功率场效应晶体工业 From old datasheet system N-ch Power MOS FET
File Size	76.83K / 8 Page	View it Online	Download Datasheet

				ANALOG DEVICES INC AD[Analog Devices] Analog Devices, Inc.
Part No.	AD620 AD620A AD620ACHIPS AD620AN AD620AR AD620AR-REEL AD620AR-REEL7 AD620B AD620BN AD620BR AD620BR-REEL AD620BR-REEL7 AD883B AD620SQ883B
OCR Text	...rdip (Q) and SOIC (R) Packages RG -IN +IN -VS 1 2 3 4 8 RG 7 +VS 6 OuTPuT AD620 TOP VIEW 5 REF 1000. Furthermore, the AD620 fe...400 125 185 1.0 1000 1500 2000 15 15 V, and RL = 2 k , unless otherwise noted) Min 1 0.01 0.10 0...
Description	Low Drift, Low Power Instrumentation Amp With Set Gains of 1 to 1000 Low Cost, Low Power Instrumentation Amplifier Precision Instrumentation Amplifier INSTRuMENTATION AMPLIFIER, 150 uV OFFSET-MAX, 1 MHz BAND WIDTH, PDSO8
File Size	571.25K / 16 Page	View it Online	Download Datasheet

				http:// FAIRCHILD[Fairchild Semiconductor] INTERSIL[Intersil Corporation] Fairchild Semiconductor Corporation
Part No.	HGT1S20N60B3S HGTG20N60B3 HGTP20N60B3 FN3723
OCR Text	...ure. 2. VCE = 360V, TC = 125oC, RG = 25. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES ICES ...400 TJ = 150oC, RG = 10, L = 100H 50 40 30 VCE = 480V, VGE = 15V 300 VCE = 480V, VGE = 15V ...
Description	40A/ 600V/ uFS Series N-Channel IGBTs 40A, 600V, uFS Series N-Channel IGBTs From old datasheet system XC9536-6VQ44C - NOT RECOMMENDED for NEW DESIGN 40 A, 600 V, N-CHANNEL IGBT
File Size	137.79K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT1S20N60C3R HGT1S20N60C3RS HGTG20N60C3R HGTP20N60C3R
OCR Text	... VCE = VGE VGE = 20V TJ = 150oC RG = 10 VGE = 15V IC = IC110, VCE = 0.5 BVES VCE(PK) = 600V L = 1mH TC = 25oC TC = 150oC TC = 25oC TC = 150o...400 0.76 V nC nC ns ns ns ns V/ns V/ns mJ mJ oC/W Current Turn-On Delay Time Current Rise Tim...
Description	40A/ 600V/ Rugged uFS Series N-Channel IGBTs 40A, 600V, Rugged uFS Series N-Channel IGBTs
File Size	107.60K / 6 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor] Fairchild Semiconductor, Corp.
Part No.	HGT1S20N60C3S HGTG20N60C3 HGTP20N60C3 G20N60C3 HGT1S20N60C3S9A
OCR Text	... 2. VCE(PK) = 360V, TJ = 125oC, RG = 10. Electrical Specifications PARAMETER TC = 25oC, unless Otherwise Specified SYMBOL BVCES BVECS...400 500 600 700 TC , CASE TEMPERATuRE (oC) VCE , COLLECTOR TO EMITTER VOLTAGE (V) ...
Description	45 A, 600 V, uFS N-Channel IGBT Box-shaped pin header, Discrete wire crimping connection, Discrete wire connectors; HRS No: 543-0654-6 53 45 A, 600 V, N-CHANNEL IGBT, TO-263AB 45A, 600V, uFS Series N-Channel IGBT 5A00V的，的ufs系列N沟道IGBT
File Size	141.01K / 8 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	HGT4E20N60A4DS HGTG20N60A4D HGTG20N60A4
OCR Text	...E = 20A, VCE = 390V, VGE = 15V, RG = 3, L = 500H, Test Circuit Figure 24 TYP 1.8 1.6 5.5 8.6 142 182 15 12 73 32 105 280 150 15 13 105 55 11...400 500 600 700 TC , CASE TEMPERATuRE (oC) VCE, COLLECTOR TO EMITTER VOLTAGE (V) F...
Description	CONNECTOR ACCESSORY 70 A, 600 V, N-CHANNEL IGBT, TO-268AA 600V/ SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode
File Size	162.96K / 9 Page	View it Online	Download Datasheet

For rg-400 u Found Datasheets File :: 7274 Search Time::1.844ms
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