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Unisonic Technologies Co., Ltd. UNISONIC TECHNOLOGIES CO LTD
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Part No. |
2SD669L-C-AA3-R 2SD669-B-AB3-R 2SD669L-D-T9N-R 2SD669L-D-T9N-K 2SD669L-D-T6C-K 2SD669L-C-T9N-R 2SD669AL-C-T60-K 2SD669AG-B-T9N-B 2SD669A-B-T9N-R 2SD669-C-AA3-R 2SD669-C-T6C-K UNISONICTECHNOLOGIESCOLTD-2SD669-D-T9N-R 2SD669-D-AA3-R 2SD669-D-AB3-R 2SD669L-B-AA3-R
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Description |
bipolar POWER GENERAL PURPOSE TRANSISTOR 1500 mA, 120 V, npn, Si, smALL signal TRANSISTOR, TO-92 bipolar POWER GENERAL PURPOSE TRANSISTOR 1500 mA, 120 V, npn, Si, smALL signal TRANSISTOR, TO-126 1500 mA, 160 V, npn, Si, smALL signal TRANSISTOR, TO-92
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File Size |
209.75K /
5 Page |
View
it Online |
Download Datasheet |
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Diodes, Inc.
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Part No. |
S1MB-13-F S1AB-13-F S1KB-13-F
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Description |
1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 1000 V, silicon, signal DIODE 1.0A SURFACE MOUNT GLASS PASSIVATED RECTIFIER 1 A, 50 V, silicon, signal DIODE RECTIFIER STANDARD SINGLE 1A 800V 800 30A-ifsm 5uA-ir 1.1V-vf smB 3K/REEL 1 A, 800 V, silicon, signal DIODE
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File Size |
107.57K /
4 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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Part No. |
GT15M321
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Description |
INSULATED GATE bipolar TRANSISTOR silicon N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS TOSHIBA INSULATED GATE bipolar TRANSISTOR silicon N CHANNEL IGBT
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File Size |
257.03K /
6 Page |
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it Online |
Download Datasheet |
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Vishay Beyschlag VISHAY SEMICONDUCTORS
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Part No. |
BYM10-1000/26 BYM10-600/46 BYM10-100/26 GL41T-HE3
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Description |
1 A, 1000 V, silicon, signal DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 600 V, silicon, signal DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 100 V, silicon, signal DIODE, DO-213AB PLASTIC PACKAGE-2 1 A, 1300 V, silicon, signal DIODE, DO-213AB
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File Size |
327.20K /
4 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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