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  super high density cell desig Datasheet PDF File

For super high density cell desig Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

    TY Semiconductor Co., Ltd
Part No. STS3402
Description super high dense cell design for low R DS

File Size 255.88K  /  3 Page

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    TY Semiconductor Co., Ltd
Part No. STS3623
Description super high dense cell design for low R DS

File Size 188.75K  /  3 Page

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    ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA ISPLSI1032EA-100LT100 ISPLSI1032EA-125LT100 ISPLS1032EA-100LT100 ISPL

LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
Part No. ISPLSI1032EA-170LT100 ISPLSI1032EA-200LT100 1032EA ISPLSI1032EA-100LT100 ISPLSI1032EA-125LT100 ISPLS1032EA-100LT100 ISPLS1032EA-125LT100 ISPLS1032EA-170LT100 ISPLS1032EA-200LT100
Description 60 MHz in-system prommable high density PLD
170 MHz in-system prommable high density PLD
125 MHz in-system prommable high density PLD
100 MHz in-system prommable high density PLD
Shielded Paired Cable; Number of Conductors:8; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyethylene; Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid; Number of Pairs:4 RoHS Compliant: Yes
In-System Programmable high density PLD 在系统可编程高密度可编程逻辑器件

File Size 194.96K  /  16 Page

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    ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-100LB208 ISPLSI2128VE-100LQ160 ISPLSI2128VE-100LT100 ISPLSI2128VE-100LT1

LATTICE[Lattice Semiconductor]
Lattice Semiconductor Corporation
Lattice Semiconductor, Corp.
Part No. ISPLSI2128VE ISPLSI2128VE-100LB100 ISPLSI2128VE-100LB208 ISPLSI2128VE-100LQ160 ISPLSI2128VE-100LT100 ISPLSI2128VE-100LT176 ISPLSI2128VE-135LB100 ISPLSI2128VE-135LB208 ISPLSI2128VE-135LQ160 ISPLSI2128VE-135LT100 ISPLSI2128VE-135LT100I ISPLSI2128VE-135LT176 ISPLSI2128VE-135LT176I ISPLSI2128VE-180LB100 ISPLSI2128VE-180LB208 ISPLSI2128VE-180LQ160 ISPLSI2128VE-180LT100 ISPLSI2128VE-180LT176 ISPLSI2128VE-250LB208 ISPLSI2128VE-250LQ160 ISPLSI2128VE-250LT176 2128VE
Description    3.3V In-System Programmable superFAST?high density PLD
CRYSTAL 32.768KHZ 12.5PF SMD
3.3V In-System Programmable superFAST?/a> high density PLD
3.3V In-System Programmable superFAST⑩ high density PLD
3.3V In-System Programmable superFAST high density PLD
CRYSTAL 12.0 MHZ 20PF SMD
3.3V In-System Programmable superFASThigh density PLD EE PLD, 7.5 ns, PQFP176
3.3V In-System Programmable superFASThigh density PLD EE PLD, 7.5 ns, PBGA208
3.3V In-System Programmable superFASThigh density PLD EE PLD, 6 ns, PBGA208
3.3V In-System Programmable superFASThigh density PLD EE PLD, 10 ns, PBGA100
3.3V In-System Programmable superFASThigh density PLD EE PLD, 7.5 ns, PBGA100
3.3V In-System Programmable superFASThigh density PLD EE PLD, 7.5 ns, PQFP160
3.3V In-System Programmable superFASThigh density PLD EE PLD, 7.5 ns, PQFP100
3.3V In-System Programmable superFASThigh density PLD 3.3在系统可编程超快⑩高密度可编程逻辑器件
3.3VIn-SystemProgrammablesuperFASThighdensityPLD
3.3V In-System Programmable superFAST?/a> high density PLD

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    STN9926AA

Stanson Technology
Part No. STN9926AA
Description The STN9926AA is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

File Size 224.98K  /  7 Page

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    STN9926

Stanson Technology
Part No. STN9926
Description The STN9926 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

File Size 642.32K  /  7 Page

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    STN4822

Stanson Technology
Part No. STN4822
Description STN4822 is the Dual N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.

File Size 510.78K  /  6 Page

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    STP4925

Stanson Technology
Part No. STP4925
Description STP4925 is the dual P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 569.13K  /  6 Page

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    STP4931

Stanson Technology
Part No. STP4931
Description STP4931 is the dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 328.89K  /  6 Page

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    SamHop Microelectronics...
Part No. SDUD01N70
Description super high dense cell design for low RDS(ON).

File Size 155.09K  /  11 Page

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For super high density cell desig Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | <9> | 10 | 11 | 12 | 13 | 14 | 15 |   

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