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Infineon Technologies AG
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| Part No. |
HYB39S64160ETL-8 HYB39S64400ETL-8 HYB39S64400ETL-7.5 HYB39S64800ETL-7.5 HYB39S64800ETL-8
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| OCR Text |
... 1mbit 16 respectively. these synchron- ous devices achieve high speed data transfer rates by employing a chip architecture that prefects multiple bits and then synchronizes the output data to a system clock. the chip is fabricated using ... |
| Description |
4M X 16 synchronOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 synchronOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
16M X 4 synchronOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 synchronOUS DRAM, 5.4 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
8M X 8 synchronOUS DRAM, 6 ns, PDSO54 10.16 X 22.22 MM, 0.80 MM PITCH, PLASTIC, TSOP2-54
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| File Size |
371.32K /
55 Page |
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Fujitsu, Ltd.
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| Part No. |
MB95108ANPFM
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| OCR Text |
...ck asynchronous (uart) or clock synchron ous (sio) serial data transfer capable part number parameter peripheral functions
mb95100am series 5 (continued) mb95 108am mb95f 104ams/ mb95f 106ams/ mb95f 108ams mb95f 104ans/ mb95f 106ans/ mb9... |
| Description |
8-BIT, MROM, 16.25 MHz, MICROCONTROLLER, PQFP64 12 X 12 MM, 1.70 MM HEIGHT, 0.65 MM PITCH, PLASTIC, LQFP-64
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| File Size |
783.91K /
72 Page |
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Integrated Silicon Solution, Inc.
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| Part No. |
AS7C33128FT32B-10TQCN AS7C33128FT32B-10TQIN
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| OCR Text |
...adsp is blocked. refer to the ?synchron ous truth table? for more information. ce1, ce2 i sync synchronous chip enables, active high, and active low, respectively. sample d on clock edges when adsc is active or when ce0 and adsp are ... |
| Description |
128K X 32 STANDARD SRAM, 10 ns, PQFP100 14 X 20 MM, LEAD FREE, TQFP-100
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| File Size |
408.50K /
19 Page |
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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY7C1568KV18-500BZXC CY7C1568KV18-500BZC CY7C1570KV18-500BZXC CY7C1570KV18-450BZXC
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| OCR Text |
...ites are conducted with on-chip synchron ous self-timed write circuitry. selection guide description 550 mhz 500 mhz 450 mhz 400 mhz unit maximum operating frequency 550 500 450 400 mhz maximum operating current 8 740 690 630 580 ma 9 740... |
| Description |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 2Mb x 36; Vcc (V): 1.7 to 1.9 V 2M X 36 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
611.30K /
30 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1568KV18-550BZXC
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| OCR Text |
...ites are conducted with on-chip synchron ous self-timed write circuitry. table 1. selection guide description 550 mhz 500 mhz 450 mhz 400 mhz unit maximum operating frequency 550 500 450 400 mhz maximum operating current x8 740 690 630 5... |
| Description |
72-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency); Architecture: DDR-II CIO, 2 Word Burst; Density: 72 Mb; Organization: 4Mb x 18; Vcc (V): 1.7 to 1.9 V 4M X 18 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
601.94K /
29 Page |
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Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
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| Part No. |
CY7C1168V18-400BZXC CY7C1168V18-375BZXC CY7C1168V18-375BZC CY7C1166V18-400BZXC
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| OCR Text |
...ites are conducted with on-chip synchron ous self-timed write circuitry. selection guide description 400 mhz 375 mhz 333 mhz 300 mhz unit maximum operating frequency 400 375 333 300 mhz maximum operating current 1080 1020 920 850 ma note 1... |
| Description |
1M X 18 DDR SRAM, 0.45 ns, PBGA165 13 X 15 MM, 1.40 MM HEIGHT, LEAD FREE, MO-216, FBGA-165
18-Mbit DDR-II SRAM 2-Word Burst Architecture (2.5 Cycle Read Latency) 1M X 18 DDR SRAM, 0.45 ns, PBGA165
2M X 8 DDR SRAM, 0.45 ns, PBGA165
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| File Size |
455.35K /
27 Page |
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it Online |
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