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to247-4 Datasheet PDF File

For to247-4 Found Datasheets File :: 331 Search Time::1.406ms
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				STMICROELECTRONICS[STMicroelectronics]
Part No.	STC08DE150HP C08DE150HP
OCR Text	... 2002/93/EC European Directive to247-4L HP Description The STC08DE150HP is manufactured in a hybrid structure, using dedicated high vol...4 2.1 2.2 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	Hybrid emitter switched bipolar transistor ESBT 1500V - 8A - 0.075 ohm
File Size	271.82K / 11 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STC05IE150HV C05IE150HV
OCR Text	...50HV Marking C05IE150HV Package to247-4LHV Packaging TUBE November 2006 This is preliminary information on a new product now in develo...4 to247-4LHV 1/7 www.st.com 7 1 Absolute Maximum Ratings STC05IE150HV 1 Table 1. S...
Description	Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12 ohm
File Size	111.71K / 7 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STC20DE90HV C20DE90HV
OCR Text	...an Directive 1 23 4 to247-4L HV Description The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT top...
Description	HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 900V - 20A - 0.06 OHM
File Size	232.81K / 11 Page	View it Online	Download Datasheet

				STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
Part No.	STC05IE150HP C05IE150HP
OCR Text	...50HP Marking C05IE150HP Package to247-4LHP Packaging TUBE November 2006 This is preliminary information on a new product now in develo...4 8 208 -40 to 150 150 1.1 Table 2. Symbol Rthj-case Thermal Data Thermal Data Parameter T...
Description	Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12OHM 发射极开关双极晶体管内酰胺酶1500伏特- 5 0.12OHM
File Size	135.36K / 7 Page	View it Online	Download Datasheet

				STMicroelectronics
Part No.	STC04IE170HV STC04IE170HV0611
OCR Text	to247-4l hv tube stc04ie170hv emitter switched bipolar transistor esbt ? 1700v - 4a - 0.17 w general features high voltage / high curren...4 www.st.com stc04ie170hv 2/11 contents 1 electrical ratings . . . . . . . . . . . . . . ....
Description	Emitter switched bipolar transistor ESBT 1700V - 4A - 0.17
File Size	234.48K / 11 Page	View it Online	Download Datasheet

				Infineon Technologies AG
Part No.	SPW35N60CFD SPW35N60CFD08
OCR Text	...ing code marking spw35n60cfd pg-to247 q67045a5053 35n60cfd pg-to247 rev. 1.3 page 1 2008 -04-17 please note the new package dimensions ar...4 k/w r thja leaded - - 62 soldering temperature, wave solderin g t sold 1.6 mm (0.063 in.) from ca...
Description	CoolMOSTM Power Transistor
File Size	729.33K / 13 Page	View it Online	Download Datasheet

				意法半导 STMicroelectronics
Part No.	STC03DE170HV
OCR Text	...hree phase application. 1 to247-4L HV Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number ST...4 100 -65 to 125 125 Unit V V V V A A A A W C C Table 4: Thermal Data Symbol Rthj-case Parameter...
Description	HYBRID EMITTER SWITCHED BIPOLAR TRANSISTOR ESBT 1700 V - 3 A - 0.55 OHM
File Size	284.43K / 9 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	STC03DE170HP C03DE170HP
OCR Text	... 2002/93/EC European Directive to247-4L HP Description The STC03DE170HP is manufactured in a hybrid structure, using dedicated high vol...4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....
Description	Hybrid emitter switched bipolar transistor ESBT 1700V - 3A - 0.55OHM
File Size	288.13K / 11 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGW14N60ED-D
OCR Text	...ged device. ? industry standard to247 package ? high speed: e off = 60 j/a typical at 125 c ? high voltage short circuit capability 1...4 to247 ae c e g g c e ? motorola, inc. 1997 mgw14n60ed 2 motorola igbt device data electrical ch...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	124.38K / 6 Page	View it Online	Download Datasheet

				ON Semiconductor
Part No.	MGW21N60ED-D
OCR Text	...uit device. ? industry standard to247 package ? high speed: e off = 65 j/a typical at 125 c ? high voltage short circuit capability ...4 45 c/w maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds t l 260 c ...
Description	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate
File Size	127.43K / 6 Page	View it Online	Download Datasheet

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