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  transistor-12a Datasheet PDF File

For transistor-12a Found Datasheets File :: 1126    Search Time::1.203ms    
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    IRG4BC30UDPBF

International Rectifier
Part No. IRG4BC30UDPBF
OCR Text TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >...12A n-channel Benefits * Generation -4 IGBT's offer highest efficiencies available * IGBTs op...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast CoPack IGBT

File Size 269.16K  /  11 Page

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    IRG4IBC30UDPBF

International Rectifier
Part No. IRG4IBC30UDPBF
OCR Text TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * 2.5kV, 60s insulation voltage * 4.8 mm creapage distance to heatsink * UltraFast...12A n-channel Benefits * Simplified assembly * Highest efficiency and power density * HEXFR...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 315.38K  /  11 Page

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    IR3800MPBF IR3800MTR1PBF IR3800MTRPBF

International Rectifier
Part No. IR3800MPBF IR3800MTR1PBF IR3800MTRPBF
OCR Text ... using an external small signal transistor. During shutdown both MOSFET drivers will be turned off. Normal operation will resume by cycling ...12A and D=0.15, the IRMS=4.28A. Ceramic capacitors are recommended due to their peak current capabil...
Description HIGHLY INTEGRATED 12A WIDE-INPUT VOLTAGE, SYNCHRONOUS BUCK REGULATOR

File Size 670.49K  /  21 Page

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    IRGS4056DPBF

International Rectifier
Part No. IRGS4056DPBF
OCR Text TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * * * * * * * * * * Low VCE (ON) Trench IGBT Technology Low switching losses Maximum...12A, TC = 100C G E tSC 5s, TJ(max) = 175C n-channel C VCE(on) typ. = 1.55V Benefits...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE

File Size 403.63K  /  11 Page

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    NTE[NTE Electronics]
Part No. NTE2308
OCR Text Transistor High Voltage, High Current Switch Features: D High Breakdown Voltage D Fast Switching Speed D Wide ASO Absolute Maximum Ratings:...12A Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon NPN Transistor High Voltage, High Current Switch

File Size 22.24K  /  2 Page

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    STTH1202FP STTH1204DI

STMICROELECTRONICS
Part No. STTH1202FP STTH1204DI
OCR Text ... switching mode base drive and transistor circuits. packaged in to-220ac, to-220fpac, and to-220ac ins, this device is intended for use in...12a r f di /dt(a/s) f t =125c j t =25c j figure 7. reverse recovery time versus di f /dt (typical v...
Description 12 A, 200 V, SILICON, RECTIFIER DIODE, TO-220AC
12 A, 400 V, SILICON, RECTIFIER DIODE, TO-220AC

File Size 294.40K  /  13 Page

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    SFP12N60

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. SFP12N60
OCR Text ... of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Steady, all for your advance SFP12N60 Fig.1 On -State Characteristics Fig.2 Transfer Characteristics Fig.3 Cap...
Description Silicon N-Channel MOSFET

File Size 569.57K  /  7 Page

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    SFP12N65

WINSEMI SEMICONDUCTOR COMPANY LIMITED
Part No. SFP12N65
OCR Text ... of operating temperature. This transistor is an electrostatic sensitive device Please handle with caution 2/7 Copyright @ WinSemi Semiconductor Co., Ltd., All rights reserved. SFP12N65 Fig. 1 On-State Characteristics Fig.2 Tr...
Description Silicon N-Channel MOSFET

File Size 264.84K  /  7 Page

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    IRFM450 JANTXV2N7228 JANTX2N7228 IRFM450-15

IRF[International Rectifier]
Part No. IRFM450 JANTXV2N7228 JANTX2N7228 IRFM450-15
OCR Text ...ability is required. The HEXFET transistor's totally isolated package eliminates the need for additional isolating material between the devi...12A VDS = VGS, ID = 250A VDS > 15V, IDS = 8.0A VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125C VG...
Description Simple Drive Requirements
POWER MOSFET THRU-HOLE (TO-254AA)
500V Single N-Channel Hi-Rel MOSFET in a TO-254AA package

File Size 178.06K  /  7 Page

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    IRG4BC30FD IRG4BC30

IRF[International Rectifier]
Part No. IRG4BC30FD IRG4BC30
OCR Text TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features * Fast: Optimized for medium operating frequencies ( 1-5 kHz in hard switching, >20...12A See Fig. 13 1.6 IC = 12A, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (un...
Description INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A)

File Size 402.63K  /  10 Page

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For transistor-12a Found Datasheets File :: 1126    Search Time::1.203ms    
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