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  transistor-3a Datasheet PDF File

For transistor-3a Found Datasheets File :: 5717    Search Time::2.86ms    
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    QM5HG-24

Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
Part No. QM5HG-24
OCR Text TRANSISTOR MODULES QM5HG-24 MEDIUM POWER SWITCHING USE NON-INSULATED TYPE QM5HG-24 * * * * IC Collector current .................3A, IB=0.6A IC=3A, VCE=1V Min. -- -- -- -- -- 5 -- VCC=600V, IC=3A, IB1=0.6A, -IB2=1.2A -- -- Transi...
Description MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
MEDIUM POWER SWITCHING USE NON-INSULATED TYPE

File Size 43.51K  /  3 Page

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    PU7457

Panasonic Semiconductor
Part No. PU7457
OCR Text Transistor Arrays (F-MOS FETs) PU7457 Silicon N-Channel Power F-MOS FET (with built-in zener diode) s Features q High avalanche energy...3A, 1 pulse s Electrical Characteristics (TC = 25C) Parameter Drain to Source cut-off current Ga...
Description Silicon N-Channel Power F-MOS FET (with built-in zener diode)

File Size 46.85K  /  3 Page

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    PQ1CY1032Z PQ1CY1032Z1 PQ1CY1032ZP

Sharp Electrionic Components
Part No. PQ1CY1032Z PQ1CY1032Z1 PQ1CY1032ZP
OCR Text ... (loss than VTHON) by switching transistor Tr on, output voltage may be turned OFF and the device becomes stand-by mode. Dissipation current at stand-by mode becomes Max.400A. When transistor Tr becomes OFF, output voltage can be ON. Extern...
Description TO-263 Surface Mount Type Chopper Regulator

File Size 91.20K  /  9 Page

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    TIP107

Inchange Semiconductor ...
Inchange Semiconductor Company Limited
Part No. TIP107
OCR Text Transistor TIP107 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= -3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = -100V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = -2.0V(Max)@ IC= -3A = -2.5V(Max)@ IC= -8...
Description isc Silicon PNP Darlington Power Transistor

File Size 116.42K  /  3 Page

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    Mitsubishi Electric Corporation
Part No. QM15DX-H
OCR Text transistor modules qm15dx-h medium power switching use insulated type outline drawing & circuit diagram dimensions in mm application inverte...3a Ci c =15a (diode forward voltage) i c =15a, v ce =2v/5v v cc =300v, i c =15a, i b1 =Ci b2 =0.3a t...
Description MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE

File Size 74.71K  /  5 Page

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    2SA1646

Inchange Semiconductor Company Limited
Inchange Semiconductor ...
Part No. 2SA1646
OCR Text Transistor 2SA1646 DESCRIPTION *Collector-Emitter Sustaining Voltage: VCEO(SUS)= -100V(Min) *Fast Switching Speed *Low Saturation Volt...3A B 2SA1646 MIN TYP. MAX -0.3 -0.5 -1.2 -1.5 -10 -10 UNIT V V V V A A IC= -8A; I...
Description isc Silicon PNP Power Transistor

File Size 89.80K  /  2 Page

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    TIP102

Inchange Semiconductor Company Limited
Part No. TIP102
OCR Text Transistor TIP102 DESCRIPTION *High DC Current Gain: hFE = 1000(Min)@ IC= 3A *Collector-Emitter Sustaining Voltage: VCEO(SUS) = 100V(Min) *Low Collector-Emitter Saturation Voltage: VCE(sat) = 2.0V(Max)@ IC= 3A = 2.5V(Max)@ IC= 8A *Com...
Description isc Silicon NPN Darlington Power Transistor

File Size 116.22K  /  3 Page

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    NXP Semiconductors N.V.
Part No. PBSS303ND PBSS303ND115
OCR Text transistor in a sot457 (sc-74) small surface-mounted device (smd) plastic package. pnp complement: pbss303pd. 1.2 features n low collector-e...3a i cm peak collector current single pulse; t p 1ms --6a r cesat collector-emitter saturation resi...
Description 60 V, 3 A NPN low VCEsat (BISS) transistor 603安NPN低饱和压BISS)晶体
60 V, 3 A NPN low VCEsat (BISS) transistor; Package: SOT457 (SC-74); Container: Tape reel smd 1000 mA, 60 V, NPN, Si, SMALL SIGNAL TRANSISTOR

File Size 150.59K  /  16 Page

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    STTA306B STTA306B-TR

ST Microelectronics
STMicroelectronics
意法半导
Part No. STTA306B STTA306B-TR
OCR Text ...OTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS. A NC DPAK DESCRIPTION The TURBOSWITCH is a very high performan...3A VR=400V dIF/dt = -16A/s dIF/dt = -50A/s IF=3A VR=400V dIF/dt = -50A/s Min. Typ. Max. Unit 20 50 A...
Description TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
TURBOSWITCH - ULTRA-FAST HIGH VOLTAGE DIODE
Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:15; Connector Shell Size:14; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

File Size 110.26K  /  8 Page

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    FJP2160D

Fairchild Semiconductor
Part No. FJP2160D
OCR Text transistor ? 2012 fairchild semiconductor corporation www.fairchildsemi.com fjp2160d rev. a0 1 may 2012 fjp2160d esbc tm rated npn silic...3a, i b =0.03a, l c =1mh, srf=480khz 137 ns t s inductive storage time 350 ns vt f inductive voltag...
Description ESBCRated NPN Silicon Transistor
ESBCTM Rated NPN Silicon Transistor

File Size 702.90K  /  12 Page

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For transistor-3a Found Datasheets File :: 5717    Search Time::2.86ms    
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