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2SC2954 M2R3GJL LM317 RT8064 L161B NCE3050I 1212E 3EZ22
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    NXP Semiconductors N.V.
Part No. PSMN015-60PS PSMN015-60PS11
OCR Text ...arameter conditions min typ max unit v ds drain-source voltage t j 25 c; t j 175 c - - 60 v i d drain current t mb =25c; v gs =10v; see figure 1 --50a p tot total power dissipation t mb =25c; see figure 2 --86w t j junction temperature...
Description N-channel 60 V 14.8 m standard level MOSFET 50 A, 60 V, 0.0148 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel 60 V 14.8 mΩ standard level MOSFET

File Size 200.08K  /  14 Page

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    HAT3015R HAT3015R-EL-E

Renesas Electronics Corporation
Part No. HAT3015R HAT3015R-EL-E
OCR Text ... -0.25 1.3 2 150 -55 to +150 unit V V A A A W W Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1 % 2. 1 Drive...source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate volt...
Description Silicon N/P Channel Power MOS FET High Speed Power Switching

File Size 57.25K  /  4 Page

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    L6932D1.2 L6932D1.2TR L6932D2.5TR L6932D1.8T L6932D25TR L6932 L6932D1.8 L6932D1.8TR L6932D12 L6932D12TR L6932D18 L6932D1

STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
Part No. L6932D1.2 L6932D1.2TR L6932D2.5TR L6932D1.8T L6932D25TR L6932 L6932D1.8 L6932D1.8TR L6932D12 L6932D12TR L6932D18 L6932D18TR L6932D2.5 L6932D25
OCR Text ...r Value 14.5 -0.3 to (Vin +0.3) unit V V THERMAL DATA Symbol Rth J-amb Tmax Parameter Thermal Resistance Junction to Ambient Maximum Jun...source ON resistance Current limiting Quiescent current Shutdown current Ripple Rejection Ven EN Inp...
Description HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR 高性能甲ULDO线性稳压器
HIGH PERFORMANCE 2A ULDO LINEAR REGULATOR

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    2N6804-12

Micro Analog systems
Part No. 2N6804-12
OCR Text ...t conditions symbol value unit operating & storage junction temperature range t j & t stg - 55 to +150 c thermal resistan...source voltage, dc v ds - 100 v gate - source voltage, dc v gs 20 v drain curre...
Description This 2N6804 switching transistor is military qualified up to the JANTXV level for high-reliability applications.

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    2N6802

Microsemi Corporation
Part No. 2N6802
OCR Text ...test conditions symbol value unit drain ? source voltage v ds 500 vdc gate ? source voltage v gs 20 vdc continuous drain current t c = +25c i d1 2.5 adc continuous drain current t c = +100c i d2 1.5 adc max. pow...
Description N-CHANNEL MOSFET

File Size 172.47K  /  4 Page

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    LM833 LM833D ON0320 LM833N

ONSEMI[ON Semiconductor]
MOTOROLA[Motorola, Inc]
Motorola, Inc.
Motorola Inc
Part No. LM833 LM833D ON0320 LM833N
OCR Text ...5 +150 -60 to +150 500 C C C mW unit V V V Output 1 1 8 2 1 7 Inputs 1 3 2 6 Inputs 2 5 VEE 4 (Top View) ...source Resistance VCC = +15 V VEE = -15 V Vn(total) = (inRS)2 +en2 + 4KTRS TA = 25C 1.0 0.7 0.5 ...
Description    DUAL OPERATIONAL AMPLIFIER
From old datasheet system
Thin Film Resistor Network; Series:VSSR; Resistance:220ohm; Resistance Tolerance: /- 5 %; Power Rating:1.4W; Voltage Rating:50V; Temperature Coefficient: /-100 ppm; Package/Case:24-QSOP; Network Circuit Type:Common Pin
Thin Film Resistor Network; Series:VSSR; Resistance:2kohm; Resistance Tolerance: /- 5 %; Power Rating:1.4W; Voltage Rating:50V; Temperature Coefficient: /-100 ppm; Package/Case:24-QSOP; Network Circuit Type:Common Pin

File Size 131.97K  /  8 Page

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    LNA2701L LN159

Panasonic Corporation
PANASONIC[Panasonic Semiconductor]
Part No. LNA2701L LN159
OCR Text unit : mm For light source of VCR (VHS System) 0.5 max. Features Two-way directivity High-power output, high-efficiency : PO = 1.8 mW (min.) Small resin package Long lifetime, high reliability Thin type package modified from LN59 ...
Description GaAs Bi-directional Infrared Light Emitting Diode

File Size 43.01K  /  2 Page

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    Anpec Electronics, Corp.
Part No. APM9988COC-TUL APM9988COC-TRL
OCR Text ...) symbol parameter rating unit v dss drain - source voltage 20 v gss gate - source voltage 8 v i d * c ontinuous drain current 6 i dm * 300 m s pulsed drain current v gs = 4.5 v 20 a i s * diode c...
Description Dual N-Channel Enhancement Mode MOSFET 双N沟道增强型MOS
Dual N-Channel Enhancement Mode MOSFET 6 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MO-153AA

File Size 181.23K  /  10 Page

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    Infineon Technologies A...
Part No. IPLU300N04S4-R7
OCR Text ...ied parameter symbol conditions unit continuous drain current i d t c =25c, v gs =10v 1) 300 a t c =100?c, v gs =10?v 2) 300 pulsed drain ...source voltage v gs - 20 v power dissipation p tot t c =25?c 429 w operating and storage temperature...
Description OptiMOS-T2 Power-Transistor

File Size 381.77K  /  9 Page

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