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SMDJ110 020200 2451B IE2412S D893D LC8390M 70450 216X7
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  v 16a Datasheet PDF File

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    HuaXinAn Electronics CO.,LTD
HuaXinAn Electronics CO...
Part No. 012-540 012-720 005-540 005-720 006-540 006-720 024-540 024-720 JQX-141FF1A 048-720 048-540 009-540
OCR Text ...8a,10a,16a 5 coil rated voltage(v) dc:3,5,6,9,12,24,48 6 coil power consumption 0.54:0.54w 0.72:0.72w 7 pole-distance 3.5:3.5mm 5:5.0mm 1a (spstno) 2a (dpstno) 1c (spdt (b-m)) 2c (dpdt(b-m)) agcdo agsno 2 ...
Description Slim type and small occupying area can offer high density P.C.B. technique
   Slim type and small occupying area can offer high density P.C.B. technique

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    IRF7834PBF IRF7834PBF-15

International Rectifier
Part No. IRF7834PBF IRF7834PBF-15
OCR Text ...1.6 0.02 -55 to + 150 Units v f Power Dissipation f Power Dissipation c A W Linear Derating Factor Operating Junction and S...16a S nA v mv/C A v m Conditions vGS = 0v, ID = 250A vGS = 10v, ID = 19A vGS = 4.5v, ID = 16a ...
Description Synchronous MOSFET for Notebook Processor Power
HEXFET Power MOSFET

File Size 186.68K  /  10 Page

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    SIC842160

celduc-relais
Part No. SIC842160
OCR Text ...Min 4 4 1 DC Nom Max 30 48 Unit v mA v v vRMS vRMS v 50 45 40 35 Ic (mA) Caracteristiques d'entree-sortie (a 20C) / Input-output characteristics (at 20C) Isolement entree-sortie/Input-output isolation @500m Ui 4000 Isolement sortie-...
Description New Solid State Relay compact size pitch 22,5mm

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    2N6371

Inchange Semiconductor Company Limited
Part No. 2N6371
OCR Text ...ameter conditions value unit v cbo collector-base voltage open emitter 50 v v ceo collector-emitter voltage open base 40 ...16a; i b =4a 4.0 v v be base-emitter on voltage i c =16a ; v ce =4v 4.0 v i ceo collector...
Description Silicon NPN Power Transistors

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    FS16UMA-5A

Renesas Electronics Corporation
Part No. FS16UMA-5A
OCR Text ...5 ~ +150 -55 ~ +150 2.0 Unit v v A A A W C C g Sep. 2001 L = 200H Typical value MITSUBISHI Nch POWER MOSFET FS16UMA-5A HIGH-...16a 4A 0.1 0 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 DRAIN CURRENT ID (A) 0 0 4 8 ...
Description MITSUBISHI Nch POWER MOSFET HIGH-SPEED SWITCHING USE

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    FDU6676AS FDU6676AS08

Fairchild Semiconductor
Part No. FDU6676AS FDU6676AS08
OCR Text ...) (Note 1a) (Note 1b) Units v v A W -Pulsed Power Dissipation for Single Operation 70 3.1 1.3 -55 to +150 TJ, TSTG Operating...16a Min Typ Max 108 250 16 Units mJ A Drain-Source Avalanche Ratings (Note 2) Off Char...
Description N-Channel PowerTrench SyncFET

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    FDMS9600S08 FDMS9600S FDMS9600S-08

Fairchild Semiconductor
Part No. FDMS9600S08 FDMS9600S FDMS9600S-08
OCR Text ... 30 20 30 108 16 60 W C A Units v v Thermal Characteristics RJA RJA RJC Thermal Resistance, Junction to Ambient Thermal Resistance, Junc...16a vGS = 4.5v, ID = 14A vGS = 10v, ID = 16a , TJ = 125C vDD = 10v, ID = 12A vDD = 10v, ID = 16a ...
Description 30v Dual N-Channel PowerTrenchMOSFET
Dual N-Channel PowerTrench? MOSFET
Dual N-Channel PowerTrench㈢ MOSFET
Dual N-Channel PowerTrench庐 MOSFET

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    IRFRU4105 IRFU4105 IRFR4105

IRF[International Rectifier]
Part No. IRFRU4105 IRFU4105 IRFR4105
OCR Text ...m from case ) Units A W W/C v mJ A mJ v/ns C Thermal Resistance Parameter RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mou...16a 2.0 --- 4.0 v vDS = vGS, ID = 250A 6.5 --- --- S vDS = 25v, ID = 16a --- --- 25 vDS = 55v, vGS ...
Description Power MOSFET(vdss=55v / Rds(on)=0.045ohm / Id=27A)
Power MOSFET(vdss=55v, Rds(on)=0.045ohm, Id=27A?)
HEXFET? Power MOSFET
Power MOSFET(vdss=55v, Rds(on)=0.045ohm, Id=27A)
Power MOSFET(vdss=55v, Rds(on)=0.045ohm, Id=27A?

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    IRG4BC20UDPBF

International Rectifier
Part No. IRG4BC20UDPBF
OCR Text ...se) 10 lbfin (1.1 Nm) Units v A v W C Thermal Resistance Parameter RJC RJC RCS RJA Wt Junction-to-Case - IGBT Junction-to-Cas...16a t rr - (ns) 60 I F = 8.0A I IRRM - (A) 10 I F = 16a IF = 8.0A I F = 4.0A 40...
Description UltraFast CoPack IGBT

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    FDP16N500704 FDPF16N50 FDP16N50 FDP16N50-0704

Fairchild Semiconductor
Part No. FDP16N500704 FDPF16N50 FDP16N50 FDP16N50-0704
OCR Text ... 500v, RDS(on) = 0.38 @vGS = 10 v * Low gate charge ( typical 32 nC) * Low Crss ( typical 20 pF) * Fast switching * 100% avalanche tested * ...16a RG = 25 (Note 4, 5) ------(Note 4, 5) vDS = 400v, ID = 16a vGS = 10v -- Drain-Sourc...
Description 500v N-Channel MOSFET

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