| |
|
 |
Mitsubishi Electric Corporation
|
| Part No. |
CM1200HB-66H
|
| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 1200A, VGE = 15V VCC = 1650v, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = -2400A / s Junction to case, IGBT part Junction t... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
| File Size |
54.25K /
4 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
Hitachi
|
| Part No. |
MBN1200D33A
|
| OCR Text |
....0 4.5 TYPICAL [Conditions] VCC=1650v Lp100nH RG=3.3 VGE=15V Tc=125C Inductive Load 2.0
Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage
TYPICAL [Conditions]
VGE=15V, RG=3.3 VCC=1650v, Lp100nH, Tc=125C... |
| Description |
Silicon N-Channel IGBT
|
| File Size |
94.75K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| Part No. |
CM400HG-66H
|
| OCR Text |
...100kHz VGE = 0V, Tj = 25C VCC = 1650v, IC = 400A, VGE = 15V, Tj = 25C IE = 400A, VGE = 0V, Tj = 25C (Note 4) IE = 400A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650v, IC = 400A, VGE = 15V RG(on) = 5, Tj = 125C, Ls = 100nH Inductive load VCC = 16... |
| Description |
3rd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules
|
| File Size |
59.66K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric Corporation
|
| Part No. |
CM800E2Z-66H
|
| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 800A, VGE = 15V VCC = 1650v, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to cas... |
| Description |
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
| File Size |
52.87K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric
|
| Part No. |
CM400HG-66H
|
| OCR Text |
...100kHz VGE = 0V, Tj = 25C VCC = 1650v, IC = 400A, VGE = 15V, Tj = 25C IE = 400A, VGE = 0V, Tj = 25C (Note 4) IE = 400A, VGE = 0V, Tj = 125C (Note 4) VCC = 1650v, IC = 400A, VGE = 15V RG(on) = 5, Tj = 125C, Ls = 100nH Inductive load VCC = 16... |
| Description |
3rd-Version HVIGBT Modules
|
| File Size |
84.66K /
7 Page |
View
it Online |
Download Datasheet |
| |
|
|
Mitsubishi Electric, Corp.
POWEREX[Powerex Power Semiconductors]
|
| Part No. |
CM1200HB-66H
|
| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 1200A, VGE = 15V VCC = 1650v, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = -2400A / s Junction to case, IGBT part Junction t... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE 1200 A, 3300 V, N-CHANNEL IGBT
|
| File Size |
50.20K /
4 Page |
View
it Online |
Download Datasheet |
| |
|
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| Part No. |
CM1200HC-66H
|
| OCR Text |
...= 125C VCE = 10V VGE = 0V VCC = 1650v, IC = 1200A, VGE = 15V VCC = 1650v, IC = 1200A VGE1 = VGE2 = 15V RG = 1.6 Resistive load switching operation IE = 1200A, VGE = 0V IE = 1200A, die / dt = -2400A / s Junction to case, IGBT part Junction t... |
| Description |
HIGH POWER SWITCHING USE INSULATED TYPE
High Voltage Insulated Gate Bipolar Transistor (HVIGBT) Modules
|
| File Size |
52.44K /
4 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
