...tings 500 500 400 7 15 7 3 35 2.0 150 -55 to +150 Unit V V V V A A A W C C
15.00.3
3.00.2
Parameter Collector to base voltage Colle...6A IC = 3A, IB = 0.6a VCE = 10V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6a, IB2 = -1.2A, VCC = 150V 10...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)
...IC IB Ta=25C PC Tj Tstg
13.7-0.2
+0.5
1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123
2.60.1 0.70.1
7
emitter voltage 2SC5077...6A, VCC = 200V 500 15 8 1.0 1.5 1.0 1.0 3.0 0.3 V V MHz s s s min typ max 100 100 100 Unit A A A V
...
Description
Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR
...yp -- -- -- -- -- -- -- -- -- 1.0 3.0 Max -- -- 100 10 20000 1.5 3 2 3.5 -- -- V V V V s s Unit V V A A Test conditions I C = 25 mA, RBE = ...6A, IB = 60 mA*1 I C = 3 A, IB = 6 mA*1 I C = 6 A, IB = 60 mA*1 I C = 3 A, IB1 = -IB2 = 6 mA I C = 3...
...ature (10 sec) Parameter Value -0.5 to +7 -0.5 to VCC + 0.5 -0.5 to VCC + 0.5 20 20 50 300 -65 to +150 300 Unit V V V mA mA mA mA
o o
ICC or IGND DC VCC or Ground Current
C C
Absolute Maximum Ratings are those values beyond wh...
...tage QUICK REFERENCE DATA GND = 0 V; Tamb = 25 C; tr = tf = 6 ns SYMBOL tPHL/ tPLH CI CPD Note 1. CPD is used to determine the dynamic power...6A 1Y to 6Y GND VCC SYMBOL data inputs data outputs ground (0 V) positive supply voltage
74HCU04
...