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  180-mhz Datasheet PDF File

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    BLF0810-180 BLF0810S-180

NXP Semiconductors
Philips Semiconductors
Part No. BLF0810-180 BLF0810S-180
OCR Text 180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors...MHz) * Internally matched for ease of use. PINNING - SOT502A PIN 1 2 3 drain gate source; connected ...
Description Base station LDMOS transistors

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    ST Microelectronics
Part No. STAP1011-180
OCR Text 180 rf power transistor the ldmost family, n-channel enhancement-mode lateral mosfets features excellent thermal stability common source c...mhz 36 v/100 sec - 10% plastic package in compliance with the 2002/95/ec european directive descr...
Description RF Power Transistor

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    QBH-180

http://
Spectrum Microwave, Inc.
Part No. QBH-180
OCR Text 180 Features ! ! ! ! High Gain: 29.0 dB Typical High Power: +18 dBm Typical Operating Temp. - 55 C to +85 C Environmental Screening Availa...MHz 29.0 1.0 0.5 -45 1.6:1 1.6:1 +18 +31 +42 3.8 +15 59 Ta = -55 C to +85 C 5 - 150 MHz +0.5/-0....
Description RF AMPLIFIER

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    Philips
Part No. BLF0810S-180 BLF0810-180 BLF0810-180_S_N_4
OCR Text 180; BLF0810S-180 Base station LDMOS transistors Preliminary specification 2002 Aug 02 Philips Semiconductors Preliminary specificati...MHz to 1 GHz) * Internally matched for ease of use. APPLICATIONS * Common source class-AB operation ...
Description Base station LDMOS transistors
From old datasheet system

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    AIT Components Ltd.
Part No. CDR125B-180 CDR125B-181 CDR125B-100 CDR125B-101 CDR125B-120 CDR125B-121 CDR125B-150 CDR125B-220 CDR125B-271 CDR125B-330 CDR125B-331 CDR125B-390 CDR125B-391 CDR125B-221 CDR125B-270 CDR125B-151 CDR125B-821 CDR125B-820 CDR125B-560 CDR125B-561 CDR125B-681 CDR125B-680 CDR125B-470 CDR125B-471
OCR Text ...@ 2.52 mhz m 0.06 2.45 cdr125b- 180 18 @ 2.52 mhz m 0.06 2.4 cdr125b- 220 22 @ 2.52 mhz m 0.07 2.2 cdr125b- 270 27 @ 2.52 mhz m 0.08 2 cdr125b- 330 33 @ 2.52 mhz m 0.1 1.8 cdr125b- 390 39 @ 2.52 mhz m 0.11 1.65 cdr125b- 470 47 @ 2.52 mhz m ...
Description CDR125B SMD POWER INDUCTOR

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    PMBT3904YS

NXP Semiconductors N.V.
Part No. PMBT3904YS
OCR Text ...onditions open base Min 100 Typ 180 Max 40 200 300 Unit V mA Per transistor NXP Semiconductors PMBT3904YS 40 V, 200 mA NPN/NPN gen...MHz VCB = 5 V; IE = ie = 0 A; f = 1 MHz VBE = 0.5 V; IC = ic = 0 A; f = 1 MHz VCE = 5 V; IC = 100 A;...
Description 40 V, 200 mA NPN/NPN general-purpose double transistor
40 V, 200 mA NPN-NPN general-purpose double transistor 200 mA, 40 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR

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    PMBT3906M

NXP Semiconductors
Part No. PMBT3906M
OCR Text ...onditions open base Min 100 Typ 180 Max -40 -200 300 Unit V mA 2. Pinning information Table 2. Pin 1 2 3 Pinning Description base emitte...MHz Rev. 01 -- 22 July 2009 (c) NXP B.V. 2009. All rights reserved. Product data sheet 4 o...
Description 40 V, 200 mA PNP switching transistor

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    2SC5183 2SC5183-T1 2SC5183-T2

NEC
Part No. 2SC5183 2SC5183-T1 2SC5183-T2
OCR Text ... - mA 15 10 5 200 A 180 A 160 A 140 A 120 A 100 A 80 A 60 A 40 A IB = 20 A 1.0 2.0 3.0 hFE - DC Current Gain 20 200 10...MHz 0.5 NF - Noise Figure - dB 0.4 0.3 0 1 2 5 10 20 50 100 IC - Collector Current - mA ...
Description From old datasheet system
NPN EPITAXIAL SILICON TRANSISTOR IN 4-PIN MINI-MOLD PACKAGE FOR LOW-NOISE MICROWAVE AMPLIFICATION

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    PMBT3906VS

NXP Semiconductors
Part No. PMBT3906VS
OCR Text ...onditions open base Min 100 Typ 180 Max -40 -200 300 Unit V mA Per transistor NXP Semiconductors PMBT3906VS 40 V, 200 mA PNP/PNP s...MHz collector capacitance VCB = -5 V; IE = ie = 0 A; f = 1 MHz emitter capacitance transition freque...
Description 40 V, 200 mA PNP/PNP switching transistor

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    PMBT3906YS PMBT3906YS115

NXP Semiconductors N.V.
Part No. PMBT3906YS PMBT3906YS115
OCR Text ...onditions open base Min 100 Typ 180 Max -40 -200 300 Unit V mA Per transistor NXP Semiconductors PMBT3906YS 40 V, 200 mA PNP/PNP g...MHz VCB = -5 V; IE = ie = 0 A; f = 1 MHz VBE = -0.5 V; IC = ic = 0 A; f = 1 MHz VCE = -5 V; IC = -10...
Description 40 V, 200 mA PNP/PNP general-purpose double transistor
40 V, 200 mA PNP-PNP general-purpose double transistor
40 V, 200 mA PNP/PNP general-purpose double transistor; Package: SOT363 (SC-88); Container: Tape reel smd

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Price and Availability




 
Price & Availability of 180-mhz
Mouser Electronics

Part # Manufacturer Description Price BuyNow  Qty.
ASEM1-80.000MHZ-LC-T
815-ASEM180MHZLCT
Abracon Corporation Standard Clock Oscillators 80.000 MHZ 3.3V 50PPM -40+85C 1: USD2.4
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RFQ
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NX8045GB-14.318180MHZ-LN-CF-001
344-NX8045GB14.31818
Nihon Dempa Kogyo Co Ltd Crystals 1: USD0.57
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RFQ
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Bristol Electronics

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9C14.318180MHZ
TXC Corporation RFQ
696
9C14300479-14.318180MHZ
TXC Corporation RFQ
391
NX1255GB-14.318180MHZ
Nihon Dempa Kogyo Co Ltd RFQ
1000
FSC-S2W14.318180MHZ
Fox Electronics RFQ
200
KF090AT-14.318180MHZ
Fox Electronics RFQ
512

TTI

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74HC4051D,653
74HC4051D 653
Nexperia Multiplexer Switch ICs MULTIPLEXER SWITCH ICS 2500: USD0.121
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UMX1NTN
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ROHM Semiconductor Bipolar Transistors - BJT DUAL NPN 50V 150MA SOT-363 3000: USD0.053
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BCX56-16,115
BCX56-16 115
Nexperia Bipolar Transistors - BJT SOT89 80V 1A NPN MED PWR 1000: USD0.055
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317500

ComSIT USA

Part # Manufacturer Description Price BuyNow  Qty.
CC1AT1A14318180MHZ20TR
Micro Crystal AG Electronic Component RFQ
2000

NexGen Digital

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VFAC3AHL-1-80MHZ
CTS Valpey Corporation RFQ
350

Chip 1 Exchange

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14,318180MHZ
INSTOCK RFQ
95
49S143-32-14.318180MHZ
SAR INSTOCK RFQ
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SG-8002JC-14.318180MHZ-PHC
INSTOCK RFQ
185
SG-8002JC-14.318180MHZ-PHB
INSTOCK RFQ
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Chip1Stop

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FA-238V 14.318180MHZ 12.0 +15.0-15.0
C1S758000039507
Seiko Epson Corporation Resonators 100: USD1.43
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180
SG-310SEF 14.318180MHZL
C1S758000041025
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SG5032CAN 14.318180MHZ TJGA
C1S758000041353
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Component Electronics, Inc

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SJ20150J7-14.318180MHZ-T/R
Sunny Electronics Corp IN STOCK SHIP TODAY BuyNow
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