...
0.5
(3)
1.5 0.4
(1)base(gate) (2)Collector(Drain) (3)Emitter(Sourse)
0.4
Each lead has same dimensions
Abbreviated symbol : UN
!Applications Low Frequency Amplifier High speed switching
!Structure PNP Silicon epi...
Description
Power transistor (-60V, -3A) Power transistor (−60V −3A) Power transistor (−60V, −3A)
... * Package with insulated metal base plate * RG on,min = 27 Ohm Type BSM 50 GB 170 DN2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1700 1700 Unit V
VCE
IC
Package HALF-BRIDGE 1
Orderi...
Description
IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块(半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
...resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. SOT78 package, in free air TYP. MAX. UNIT 60 1.9...gate threshold voltage Drain-source on-state resistance Forward transconductance gate source leakage...