| |
|
 |
VISAY[Vishay Siliconix]
Vishay Intertechnology,Inc.
|
| Part No. |
2N4118A SST4119 2N4117A 2N4119A PN4117A PN4118A PN4119A SST4117 SST4118
|
| Description |
N-channel JFETs
IC FTDI2232L USB/SERIAL 48-LQFP
MOSFET, dual PP SO-8MOSFET, dual PP SO-8; Transistor type:MOSFET; Transistor polarity:dual P; voltage, Vds max:12V; Case style:SO-8; Current, Id cont:4.8A; Current, Idm pulse:-20A; Power, Pd:1.1W; Resistance, Rds on:0.035R; SMD:1;
MOSFET, dual PP SO-8MOSFET, dual PP SO-8; Transistor type:MOSFET; Transistor polarity:dual P; voltage, Vds max:20V; Case style:SO-8; Current, Id cont:3.6A; Current, Idm pulse:40A; Power, Pd:1.1W; Resistance, Rds on:0.06R; SMD:1;
|
| File Size |
59.13K /
5 Page |
 View
it Online |
Download Datasheet
|
| |
|
|
SemeLAB
SEME-LAB[Seme LAB]
|
| Part No. |
SML100W18
|
| Description |
N-channel ENHANCEMENT MODE HIGH voltage POWER MOSFETS
N-channel Enhancement Mode High voltage Power MOSFET(Vdss:1000V,Id(cont):17.3A,Rds(on):0.57Ω)(N沟道增强高电压功率MOS场效应管(Vdss:1000V,Id(cont):9A,Rds(on):1.100Ω))
|
| File Size |
25.75K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| Part No. |
24C16 ST25C16 ST25C16B1TR ST25C16B3TR ST25C16B5TR ST25C16B6TR ST25C16M1TR ST25C16M3TR ST25C16M5TR ST25C16M6TR ST24C16 ST24C16B1TR ST24C16B3TR ST24C16B5TR ST24C16B6TR ST24C16M1TR ST24C16M3TR ST24C16M5TR ST24C16M6TR ST24W16 ST24W16B1TR ST24W16B3TR ST24W16B5TR ST24W16B6TR ST24W16M1TR ST24W16M3TR ST24W16M5TR ST24W16M6TR ST25W16 ST25W16B1TR ST25W16B3TR ST25W16B5TR ST25W16B6TR ST25W16M1TR ST25W16M3TR ST25W16M5TR ST25W16M6TR
|
| Description |
MOSFET; Transistor Polarity:dual P channel; Drain Source voltage, Vds:-30V; continuous Drain Current, Id:-6.4A; Package/Case:PowerPAK 1212-8 16千位串行I2C总线的EEPROM与用户定义的块写保护
16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 16千位串行I2C总线的EEPROM与用户定义的块写保护
MOSFET, dual NN POWERPAKMOSFET, dual NN POWERPAK; Transistor type:MOSFET; Transistor polarity:dual N; voltage, Vds max:100V; Case style:PowerPak SO-8; Current, Id cont:1.8A; Current, Idm pulse:10A; Power, Pd:1.3W; Resistance, Rds
MOSFET; Transistor Polarity:P channel; Drain Source voltage, Vds:-20V; continuous Drain Current, Id:-3.6A; On-Resistance, Rds(on):0.065ohm; Rds(on) Test voltage, Vgs:-4.5V; Package/Case:MICRO FOOT; Leaded Process Compatible:No
MOSFET, dual, PP, POWERPAK; Transistor type:MOSFET; Current, Id cont:7A; Resistance, Rds on:0.02R; voltage, Vgs Rds on measurement:10V; Case style:SO-8 PowerPak; Charge, gate p channel:49nC; Current, Idm pulse:30A; Depth, RoHS Compliant: Yes
(ST2xxx) 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection
16/8/4/2/1KbitSerialICBusEEPROM
|
| File Size |
125.39K /
17 Page |
View
it Online |
Download Datasheet |
| |
|
|
TT electronics Semelab, Ltd.
SEME-LAB[Seme LAB]
|
| Part No. |
SML80H14
|
| Description |
N-channel ENHANCEMENT MODE HIGH voltage POWER MOSFETS 13.5 A, 800 V, 0.58 ohm, N-channel, Si, POWER, MOSFET, TO-258AA
N-channel Enhancement Mode High voltage Power MOSFET(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):13.5A,Rds(on):0.58Ω))
|
| File Size |
26.04K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
SemeLAB
SEME-LAB[Seme LAB]
|
| Part No. |
SML80H12 SML100H11
|
| Description |
N-channel ENHANCEMENT MODE HIGH voltage POWER MOSFETS
N-channel Enhancement Mode High voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.67Ω))
|
| File Size |
26.03K /
2 Page |
View
it Online |
Download Datasheet |
| |
|
|
SemeLAB
SEME-LAB[Seme LAB]
|
| Part No. |
SML80A12 SML100A9
|
| Description |
N-channel ENHANCEMENT MODE HIGH voltage POWER MOSFETS
N-channel Enhancement Mode High voltage Power MOSFET(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω)(N沟道增强高电压功率MOS场效应管(Vdss:800V,Id(cont):11.5A,Rds(on):0.650Ω))
|
| File Size |
20.46K /
2 Page |
View
it Online |
Download Datasheet |
|
Price and Availability
|
