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  linear power psoc devices Datasheet PDF File

For linear power psoc devices Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    CY8C41223-24SXI CY8C41123-24SXI CY8C41123-24SXIT CY8C41223-24SXIT

Cypress Semiconductor
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Part No. CY8C41223-24SXI CY8C41123-24SXI CY8C41123-24SXIT CY8C41223-24SXIT
Description linear power psoc垄芒 devices
linear power psoc devices
linear power psoc?/a> devices

File Size 448.24K  /  36 Page

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    CY8C42223-24SXI CY8C42223-24SXIT CY8C42423-24LFXI CY8C42423-24LFXIT CY8C42123-24SXI CY8C42123-24SXIT CY8C42323-24ZXIT CY

CYPRESS SEMICONDUCTOR CORP
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Part No. CY8C42223-24SXI CY8C42223-24SXIT CY8C42423-24LFXI CY8C42423-24LFXIT CY8C42123-24SXI CY8C42123-24SXIT CY8C42323-24ZXIT CY8C42000-24LFXI
Description MULTIFUNCTION PERIPHERAL, PDSO8
power psoc?/a> devices
power psoc devices

File Size 517.43K  /  42 Page

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    CY8C21123 CY8C2112311 CY8C21123-24SXIT CY8C21323-24LFXIT

Cypress Semiconductor, Corp.
CYPRESS SEMICONDUCTOR CORP
Part No. CY8C21123 CY8C2112311 CY8C21123-24SXIT CY8C21323-24LFXIT
Description psoc Programmable System-on-Chip Low power at high speed
psoc(R) Programmable System-on-Chip(TM); Analog psoc Blocks: 4; Digital psoc Blocks: 4; Memory Size: 4 KB; Temperature Range: -40 to 85 C MULTIFUNCTION PERIPHERAL, PDSO8
psoc&trade; Mixed-Signal Array CY8C21123, CY8C21223, and CY8C21323 MULTIFUNCTION PERIPHERAL, QCC24

File Size 575.89K  /  43 Page

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    CYPRESS SEMICONDUCTOR CORP
Part No. CY8C29466-24PVXA
Description CY8C29466 Automotive psoc(R) Programmable System-on-Chip(TM); Analog psoc Blocks: 12; Digital psoc Blocks: 16; Memory Size: 32 KB; Temperature Range: -40 to 85 C

File Size 622.03K  /  34 Page

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    CY8C41123-24SXI CY8C41000-24LFXI

Cypress Semiconductor
Part No. CY8C41123-24SXI CY8C41000-24LFXI
Description linear power psocdevices

File Size 441.14K  /  36 Page

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    CY8C41223

Cypress Semiconductor
Part No. CY8C41223
Description (CY8C41123 / CY8C41223) linear power devices

File Size 509.61K  /  36 Page

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    Cypress
Part No. CY8C24123-24PI CY8C24223 CY8C24223-24PI CY8C24223-24PVI CY8C24223-24SI CY8C24123-24SI CY8C24423-24PI CY8C24423-24PVI CY8C24423-24SI CY8C24423-24PVIT CY8C24223-24PVIT
Description psocâ„¢ Mixed Signal Array
psoc™ Mixed Signal Array
psoc mixed signal array. Flash 4 Kbytes. RAM 256 Bytes. Switch mode Pump yes.

File Size 621.96K  /  42 Page

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    CY8C22345 CY8C22345-24SXI

Cypress Semiconductor, Corp.
Part No. CY8C22345 CY8C22345-24SXI
Description psoc Programmable System-on-Chip Low power at high speed
psoc&#174; Programmable System-on-Chip&trade MULTIFUNCTION PERIPHERAL, PDSO28

File Size 512.28K  /  34 Page

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    CREE power
Part No. W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L000 W4NXD8D-0000 W4NXD8C-S000 W4NXD8D-S000 W4NXD8G-0000 W6NRE0X-0000 W6NRD0X-0000 W6PXD3O-0000 W6NXD3L-0000 W6NXD0K-0000 W6NXD3K-0000
Description Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition

File Size 273.34K  /  17 Page

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    Silicon Storage Technology, Inc.
Microchip Technology, Inc.
Part No. SST39VF400A-70-4C-BK SST39VF400A-90-4C-BK SST39VF800A-70-4C-BK SST39VF800A-90-4C-BK SST39VF400A-70-4I-BK SST39VF800A-70-4I-BK SST39VF800A-90-4I-BK SST39VF400A-90-4I-BK SST39LF400A-45-4C-BK SST39LF400A-55-4C-BK SST39LF800A-55-4C-BK SST39LF400A-55-4C-B2K SST39VF400A-90-4C-B2K SST39VF400A-70-4C-B2K SST39VF400A-90-4I-B2K
Description CABLE FLEX FOR CY3250
psoc® Mixed-Signal Array
psoc™ Mixed Signal Array
psoc® Mixed-Signal Array CY8C27143, CY8C27243, CY8C27443, CY8C27543, and CY8C27643
4-Mbit (256K x 16) Static RAM
x16 Flash EEPROM x16闪存EEPROM
psoc&reg; Mixed-Signal Array CY8C27143, CY8C27243, CY8C27443, CY8C27543, and CY8C27643 x16闪存EEPROM
2K x 8 Dual-Port Static RAM x16闪存EEPROM

File Size 353.12K  /  32 Page

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