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  p-channel high-density trench Datasheet PDF File

For p-channel high-density trench Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    MAR6401

Hope Microelectronics co., Ltd
Part No. MAR6401
Description p-channel High Density trench

File Size 197.66K  /  3 Page

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    First Components Intern...
Part No. FCI2301
Description p-channel high-density trench MOSFET

File Size 702.31K  /  5 Page

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    matrix microtech
Part No. MT4953
Description Dual p-channel High Density trench MOSFET

File Size 341.45K  /  6 Page

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    KI8205T

Guangdong Kexin Industrial Co.,Ltd
Part No. KI8205T
Description Dual N-Channel High Density trench MOSFET

File Size 42.66K  /  2 Page

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    ACE632

ACE Technology Co., LTD.
Part No. ACE632
Description The ACE632 is the N- and p-channel enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 947.24K  /  11 Page

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    STP9437

Stanson Technology
Part No. STP9437
Description STP9437 is the p-channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 369.27K  /  6 Page

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    ST3401SRG

Stanson Technology
Part No. ST3401SRG
Description ST3401RSG is the p-channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology.

File Size 205.73K  /  6 Page

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    STP9434

Stanson Technology
Part No. STP9434
Description STP9434 is the p-channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.

File Size 308.65K  /  6 Page

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    ST7400

Stanson Technology
Part No. ST7400
Description ST7400 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 384.85K  /  8 Page

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    STN4480

Stanson Technology
Part No. STN4480
Description STN4480 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.

File Size 744.55K  /  6 Page

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For p-channel high-density trench Found Datasheets File :: 150+       Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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