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rg-161 u Datasheet PDF File

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				IRF[International Rectifier]
Part No.	GA100TS120u
OCR Text	... 60 80 100 120 140 160 RG , Gate Resistance (Ohm) TJ , Junction Temperature C ) ( Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 GA...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V ultraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3711 IRF3711L IRF3711S
OCR Text	...- VDD = 10V --- ID = 30A ns --- RG = 1.8 --- VGS = 4.5V --- VGS = 0V --- pF VDS = 10V --- = 1.0MHz Avalanche Characteristics Symbol EA...161) 3.90 (.153) 1.60 (.063) 1.50 (.059) 0.368 (.0145) 0.342 (.0135) FEED DIRECTION 1.85 (.073) ...
Description	Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?? Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A) Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
File Size	243.87K / 11 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JFLL
OCR Text	...ID [Cont.] @ 25C VDD = 0.5 VDSS RG = 0.6W ID = ID [Cont.] @ 25C MIN TYP 2 ns MAX uNIT Amps Volts V/ns ns 44 176 1.3 5 250 500 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	53.49K / 2 Page	View it Online	Download Datasheet

				Advanced Power Technology Ltd.
Part No.	APT5010JLC
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 44 176 1.3...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	POWER MOS VI 500V 44A 0.100 Ohm Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs.
File Size	34.93K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JLL
OCR Text	... @ 25C VGS = 15V VDD = 0.5 VDSS RG = 0.6W ID = ID[Cont.] @ 25C MIN TYP (Body Diode) 2 ns MAX uNIT Amps Volts ns C 44 176 1.3 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS
File Size	51.35K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5010JVFR
OCR Text	... 0.5 VDSS ID = ID [Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT pF 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.63K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technolo... Advanced Power Technology, Ltd.
Part No.	APT5010JVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 0.6 MIN TYP MAX uNIT 7400 1000 380 312 50 127 14 16 54 5 8900 1400 570 470 75 190 30 32 80 10 ns...161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378)...
Description	POWER MOS V 500V 44A 0.100 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. ECONOLINE: REC3-S_DRW(Z)/H* - 3W DIP Package- 1kVDC Isolation- Wide Input 2:1 & 4:1- Regulated Output- 100% Burned In- uL94V-0 Package Material- Continuous Short Circiut Protection- Efficiency to 80% 电源MOS V是一个高电压N新一代通道增强型功率MOSFET
File Size	71.26K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5022AVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3700 510 200 150 25 70 12 10 50 8 4440 715 300 225 37 105 25 20 75 15 ns nC...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description	POWER MOS V 500V 21A 0.220 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	58.67K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5024AVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 3600 470 180 140 22 65 11 10 50 7 4320 660 270 210 35 95 22 20 75 14 ns nC ...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description	POWER MOS V 500V 18.5A 0.240 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	60.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5030AVR
OCR Text	...= 0.5 VDSS ID = ID[Cont.] @ 25C RG = 1.6 MIN TYP MAX uNIT 2650 360 150 110 19 45 10 11 43 7 3180 500 225 175 30 70 20 22 70 14 ns nC ...161) (2-Places) Gate Source 16.64 (.655) 17.15 (.675) 38.61 (1.52) 39.12 (1.54) 22.23 (.875)...
Description	POWER MOS V 500V 14.7A 0.300 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	61.48K / 4 Page	View it Online	Download Datasheet

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