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Motorola Inc MOTOROLA[Motorola, Inc]
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Part No. |
MJ10023 MJ10022
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OCR Text |
...nc. 1995 Motorola Bipolar Power transistor Device Data The MJ10022 and MJ10023 Darlington transistors are designed for high-voltage, high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited... |
Description |
40 AMPERE NPN SILICON POWER DARLINGTON transistorS 350 AND 400 VOLTS 250 WATTS
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File Size |
300.22K /
8 Page |
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Motorola Inc MOTOROLA[Motorola, Inc]
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Part No. |
MJ3281A NH1302A
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OCR Text |
...y NPN-PNP Silicon Power Bipolar transistor
The MJ3281A and MJ1302A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. * Designed for 100 W Audio Frequency * Gain Complementary: -- Gai... |
Description |
15 AMPERE COMPLEMENTARY SILICON POWER transistorS 200 VOLTS 250 WATTS COMEPLEMENTARY NPN-PNP SILICON POWER BOPOLAR transistor
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File Size |
221.46K /
6 Page |
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it Online |
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MICREL INC MICREL[Micrel Semiconductor]
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Part No. |
MIC3289-24YML MIC3289 MIC3289-16YD6 MIC3289-16YML MIC3289-24YD6 MIC3289-16YMLTR
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OCR Text |
..., PWM generator, bipolar output transistor, digital interface with D/A converter and Schottky rectifier diode. It features true one-wire digital control that may be used to vary the brightness of the output LEDs and place the device into sh... |
Description |
LED DISPLAY DRIVER, DSO8 1.2MHz PWM White LED Driver with Internal Schottky Diode and True 1-Wire Digital Control
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File Size |
365.63K /
13 Page |
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it Online |
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MOTOROLA[Motorola, Inc]
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Part No. |
MJ410
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OCR Text |
...nc. 1995 Motorola Bipolar Power transistor Device Data
High Voltage NPN Silicon transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMU... |
Description |
5 AMPERE POWER transistor NPN SILICON
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File Size |
139.82K /
4 Page |
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it Online |
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http:// ONSEMI[ON Semiconductor]
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Part No. |
MJB42CT4 MJB41C MJB41CT4 MJB42C MJB41C-D
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OCR Text |
...the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not... |
Description |
Complementary Silicon Plastic Power transistors D2PAK for Surface Mount Complementary Silicon Plastic Power transistors 6 A, 100 V, PNP, Si, POWER transistor Complementary Silicon Plastic Power transistors 6 A, 100 V, NPN, Si, POWER transistor
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File Size |
123.53K /
8 Page |
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ONSEMI[ON Semiconductor]
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Part No. |
MJD148T4 MJD148
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OCR Text |
transistor
DPAK For Surface Mount Applications
Designed for general purpose amplifier and low speed switching applications. * High Gain - 50 Min @ IC = 2.0 A * Low Saturation Voltage - 0.5 V @ IC = 2.0 A * High Current Gain - Bandwidth Pr... |
Description |
NPN Silicon Power transistor
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File Size |
69.48K /
6 Page |
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UTC[Unisonic Technologies]
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Part No. |
MJD210
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OCR Text |
transistor
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS DESCRIPTION
The UTC MJD210 is designed for low voltage, low-power, high-gain audio amplifier applications.
FEATURE
*Collector-Emitter Sustaining Voltage VCEO(sus) =25V (Min) @... |
Description |
PNP SILICON DPAK FOR SURFACE MOUNT APPLICATIONS
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File Size |
161.20K /
5 Page |
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it Online |
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Price and Availability
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