| PART |
Description |
Maker |
| BUL146FG BUL146G |
Bipolar Power TO220FP NPN 6A 400V; Package: TO-220 3 LEAD FULLPAK; No of Pins: 3; Container: Rail; Qty per Container: 50 6 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-220AB
SWITCHMODE NPN Bipolar Power Transistor
|
ON Semiconductor
|
| IRG4BC29F IRG4BC30F IRG4BC30 |
600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.59V，@和VGE \u003d 15V的，集成电路\u003d 17A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRGPC30UD2 |
600V Copack IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| 2SD1816S-TL-E 2SD1816S-H 2SD1816S-E 2SD1816S-TL-H |
Bipolar Transistor
Bipolar Transistor (-)100V, (-)4A, Low VCE(sat), (PNP)NPN Single TP/TP-FA
|
ON Semiconductor
|
| IRGIH50F |
1200V DISCRETE Hi-Rel IGBT in a TO-259AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| IRG4BH20K-L |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-262 package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| IRGPF50F 2003 IRGPF50 |
900V Discrete IGBT in a TO-3P (TO-247AC) package
INSULATED GATE BIPOLAR TRANSISTOR
From old datasheet system
|
International Rectifier
|
| BFR340F |
RF-Bipolar - NPN Silicon RF transistor in TSFP-3 package ideal for Low Noise Amplifiers and Oscillators
|
INFINEON[Infineon Technologies AG]
|
| IRGPS40B120UD |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-274AA package
INSULATED GATE BIPOLAR TRANSISTOR
|
International Rectifier
|
| BFR340L3 |
RF-Bipolar - NPN Silicon RF transistor in TSLP-3 package ideal for Low Noise Amplifiers and VCO Modules
|
INFINEON[Infineon Technologies AG]
|
| BFR380T BFR360 |
RF-Bipolar - NPN Silicon RF transistor in SC75 package ideal for Low Phase Noise Oscillators up to 4GHz
|
INFINEON[Infineon Technologies AG]
|
