| PART |
Description |
Maker |
| M29W400DT M29W400DT45M1E M29W400DT45M1F M29W400DT4 |
4 Mbit (512Kb x8 or 256Kb x16 Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16 / Boot Block) 3V Supply Flash Memory
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) 3V Supply Flash Memory 4兆位12KB的x856Kb的x16插槽，引导块V电源快闪记忆
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M29F400BB45N1E M29F400BB45N1F M29F400BB45N3E M29F4 |
4 Mbit (512Kb x8 or 256Kb x16, Boot Block) single supply Flash memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M36DR432AD M36DR432AD10ZA6T M36DR432AD12ZA6T M36DR |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(4M位闪速存储器)
|
意法半导
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27C4002-90B1TR M27C4002-90B1X M27C4002-90B6X M27C |
4 Mbit (256Kb x16) UV EPROM and OTP EPROM
4 MBIT (256KB X16) UV EPROM AND OTP ROM
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29F800D M29F800DB M29F800DB55N1F M29F800DT90M6E - |
8 Mbit (1Mb x8 or 512Kb x16 / Boot Block) 5V Supply Flash Memory
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 5V Supply Flash Memory 8兆（1兆x812KB的x16插槽，引导块V电源快闪记忆
|
ST Microelectronics
STMicroelectronics N.V.
|
| M27V800-150XM1TR M27V800 M27V800-100B1TR M27V800-1 |
NND - 8 MBIT (1MB X8 OR 512KB X16) LOW VOLTAGE UV EPROM AND OTP EPROM
8 Mbit 1Mb x8 or 512Kb x16 Low Voltage UV EPROM and OTP EPROM 8兆x812KB的x16低压紫外线可擦写可编程只读存储器和OTP存储
512 Kbit 64Kb x8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M28W800CT M28W800CB M28W800CT100N1T M28W800CT100N6 |
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
8 MBIT (512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W800DB45M6E M29W800DB45M6F M29W800DB45M6T M29W8 |
8 Mbit (1Mb x8 or 512Kb x16, Boot Block) 3V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
| M29W800DB90N1 |
8 MBIT (1MB X8 OR 512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
SGS Thomson Microelectronics
|
