| PART |
Description |
Maker |
| NV23K07 NV23KQASDC10V NV23KASDC10V NV23KASDC12V NV |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
| NV23107 NV2312CSDC10VN NV2312CSDC10VS NV2312ASDC10 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
| XT36C |
Surface Mount Microprocessor Crystals 10.0MHz - 64.0MHz, Withstands Solder and Reflow Techniques, Slimline Profile, Tape and Reel (Standard 1000 Pieces)
|
Vishay
|
| BZG05C BZG05C10 BZG05C100 BZG05C11 BZG05C12 BZG05C |
High Precision 10 V Reference; Package: CHIPS OR DIE; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
High Precision 10 V Reference; Package: PDIP; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
2.5 V/3.0 V Ultrahigh Precision Bandgap Voltage Reference; Package: PDIP; No of Pins: 8; Temperature Range: Industrial 硅的Z -二极
High Precision 10 V Reference; Package: SOIC; No of Pins: 8; Temperature Range: Commercial 硅的Z -二极
Silicon Z-Diodes 硅的Z -二极
High Precision 10 V Reference; Package: CerDIP; No of Pins: 8; Temperature Range: Military
Silicon Z-Diode(稳压应用电压范围3.3-100V的齐纳二极管)
From old datasheet system
|
Vishay Intertechnology, Inc.
Vishay Intertechnology,Inc.
VISAY[Vishay Siliconix]
Vishay Telefunken
|
| DS1623 |
High Resolution Temperature Measurementwith Dallas Direct-to -digital Temperature Sensors(数字温度 DIGITAL TEMP SENSOR-SERIAL, 9BIT(s), RECTANGULAR, SURFACE MOUNT
|
Maxim Integrated Products, Inc.
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| T2035H-600TRG T2035H-600G-TR T2035H T2035H-600G T2 |
Snubberless?/a> high temperature 20 A Triacs
Snubberless high temperature 20 A Triacs
Snubberless⑩ high temperature 20 A Triacs
|
STMicroelectronics
|
| NRT335M06 NRA155M25 NRB474K25 NRC473K16 NRC473K20 |
High-Temperature Durability 高温耐久
R Series Chip
High-Temperature Durability
|
Electronic Theatre Controls, Inc.
ETC
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NEC
List of Unclassifed Man...
|
| SS2PH9-E3_84A SS2PH9-E3_85A SS2PH9HE3_84A SS2PH9HE |
High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance
|
Vishay Siliconix
|
| FHT900-16F FHT200-16F FHT800-16F FHT1000-16F FHT13 |
Radial Leaded PPTC FHT Series: High Temperature, 125隆?C
Radial Leaded PPTC FHT Series: High Temperature, 125掳C
Radial Leaded PPTC FHT Series: High Temperature, 125°C
|
RFE international
|
| TX7-705C-S-HP |
High precision SMD TCXO High frequency stability vs. temperature 0.10 ppm
|
QUARTZCOM the communications company
|
