PART |
Description |
Maker |
NRT335M06 NRA155M25 NRB474K25 NRC473K16 NRC473K20 |
High-Temperature Durability 高温耐久 R Series Chip High-Temperature Durability
|
Electronic Theatre Controls, Inc. ETC List of Unclassifed Manufacturers http:// NEC List of Unclassifed Man...
|
2SA1252 |
High VEBO. Wide ASO and high durability against breakdown.
|
TY Semiconductor Co., Ltd
|
A3187ELT A3187EUA A3187LLT A3187LT UGN3175SUA A318 |
HALL-EFFECT LATCHES FOR HIGH-TEMPERATURE OPERATION 霍尔效应锁存器的高温作业 SENSOR IC 5CH 5V 5MA SGL 28-SSOP Hall-Effect Latch For High-Temperature Operation(工作于高温的霍尔效应锁存 Hall-effect latche for high-temperature operation
|
Allegro MicroSystems, Inc. ALLEGRO[Allegro MicroSystems]
|
NV23107 NV2312CSDC10VN NV2312CSDC10VS NV2312ASDC10 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc
|
NV2RZDC12V0.64 NV2RZDC12V0.93 NV2R NV2RSDC12V0.93 |
Withstands high temperature, operating under 105 ambient temperature
|
DB Lectro Inc.
|
MPXV6115VC6U |
High Temperature Accuracy ntegrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated
|
FREESCALE[Freescale Semiconductor, Inc]
|
MPXA6115A MPXH6115A |
MPXA6115A High Temperature Accuracy Integrated Silicon Pressure Sensor for Manifold Absolute Pressure, Altimeter or Barometer Applications On-Chip Signal Conditioned, Temperature Compensated and Calibrated High Temperature Accuracy Integrated Silicon Pressure Sensor for Measuring Absolute Pressure
|
Motorola
|
MPXV6115VC6U |
High Temperature Accuracy Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated From old datasheet system
|
Motorola
|
T1010H-6G T1010H-6G-TR T1010H-6T T1010H-6T-TR T101 |
High-temperature 10A sensitive gate Triacs High temperature 10 A sensitive TRIACs 600 V, 10 A, TRIAC, TO-220AB
|
ST Microelectronics STMicroelectronics
|
T2035H07 T2035H-6I-TR T2050H-6I-TR T2050H-6G-TR T2 |
600 V, 20 A, SNUBBERLESS TRIAC High temperature 20 A Snubberless TRIACs High temperature 20 A Snubberless⑩ TRIACs
|
STMicroelectronics
|
W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|