| PART |
Description |
Maker |
| FDD5353 |
60V N-Channel Power Trench MOSFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel 11.5 A, 60 V, 0.0123 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
N-Channel Power Trench㈢ MOSFET 60V, 50A, 12.3mヘ
N-Channel Power Trench? MOSFET 60V, 50A, 12.3mΩ
|
Fairchild Semiconductor, Corp.
|
| NTHD3100C NTHD3100CT1 NTHD3100CT1G NTHD3100CT3 NTH |
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™
Power MOSFET Complementary, 20 V, 3.9 A/-4.4 A ChipFET™; Package: ChipFET™; No of Pins: 8; Container: Tape and Reel; Qty per Container: 3000 2.9 A, 20 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
Power MOSFET 20V, 3.9A/4.4A, Complementary ChipFET(20V, 3.9A/4.4A功率MOSFET)
Power MOSFET 20 V, 3.9 A /−4.4 A, Complementary ChipFET
|
ON Semiconductor
|
| ISL55110IRZ-T ISL55110-11 |
Dual, High Speed MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 16-QFN T&R 3.5 A 2 CHANNEL, HALF BRDG BASED MOSFET DRIVER, PQCC16
|
Intersil, Corp.
Intersil Corporation
|
| IXFH74N20 IXFT74N20 IXFH68N20 IXFT68N20 |
Discrete MOSFETs: HiPerFET Power MOSFETS
High Performance, 145 MHz FastFET™ Op Amp; Package: SOT-23; No of Pins: 5; Temperature Range: Industrial 68 A, 200 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
|
IXYS[IXYS Corporation]
IXYS, Corp.
|
| FDMS86101 |
100V N-Channel PowerTrench® MOSFET; 8-Power 56 (PQFN) 12.4 A, 100 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-240AA
|
Fairchild Semiconductor, Corp.
|
| EDI8F32259C35MNC EDI8F32259C35MMC EDI8G32259B12MZC |
High Speed, Single Channel, Power MOSFET Driver; Temperature Range: -40°C to 85°C; Package: 8-PDIP
x32 SRAM Module
TFT-LCD DC/DC with Integrated Amplifiers; Temperature Range: -40°C to 85°C; Package: 32-QFN T&R X32号的SRAM模块
|
Integrated Device Technology, Inc.
Samsung Semiconductor Co., Ltd.
|
| SFF044J |
35 AMP 60 Volts 0.035OHM N-Channel POWER MOSFET 35 A, 60 V, 0.035 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-257
|
Solid State Devices, Inc.
|
| NTB25P06T4G NTB25P06 NTB25P06G NTB25P06T4 |
Power MOSFET 25 A, 60 V P-Channel D2PAK
Power MOSFET −60 V, −27.5 A, P−Channel D2PAK 27.5 A, 60 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
Power MOSFET −60 V, −27.5 A, P−Channel D2PAK
Power MOSFET -60 V, -27.5 A, P-Channel D2PAK
|
ONSEMI[ON Semiconductor]
|
| NTK3139P NTK3139PT1G NTK3139PT5G |
Power MOSFET 20 V, 780 mA, Single P-Channel
POWER MOSFET −20 V, −780 MA, SINGLE P−CHANNEL WITH ESD PROTECTION, SOT−723
Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 0.78 A, 20 V, 0.48 ohm, P-CHANNEL, Si, POWER, MOSFET
|
ON Semiconductor
|
| IRFP254BFP001 |
250V N-Channel B-FET / Substitute of IRFP254 & IRFP254A; ; No of Pins: 3; Container: Rail 25 A, 250 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRFS644BFP001 |
250V N-Channel B-FET / Substitute of IRFS644 & IRFS644A; ; No of Pins: 3; Container: Rail 14 A, 250 V, 0.28 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
|
| EDI7F2331MV100BNC EDI7F2331MV150BNC |
Dual 3MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output; Temperature Range: -55°C to 125°C; Package: 8-SOIC T&R EEPROM
|
Bourns, Inc.
|
|
