PART |
Description |
Maker |
TIM4450-12UL |
HIGH POWER P1dB=41.5dBm at 4.4GHz to 5.0GHz
|
Toshiba Semiconductor
|
TIM5964-25UL TIM5964-25UL09 |
HIGH POWER P1dB=44.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
TIM5964-16UL TIM5964-16UL09 |
HIGH POWER P1dB=42.5dBm at 5.9GHz to 6.4GHz
|
Toshiba Semiconductor
|
TIM6472-6UL |
HIGH POWER P1dB=38.5dBm at 6.4GHz to 7.2GHz
|
Toshiba Semiconductor
|
TIM5964-60SL08 |
IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level
|
Toshiba Semiconductor
|
TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
HMC586LC4B |
4 - 8 GHz, 5dBm Pout, -100dBc/Hz SSB Phase Noise@100kHz WIDEBAND MMIC VCO w/ BUFFER AMPLIFIER, 4.0 - 8.0 GHz
|
Hittite Microwave Corporation
|
MCO500-18IO1 MCO500 MCO500-12IO1 MCO500-14IO1 MCO5 |
1800V high power thyristor module 1600V high power thyristor module 1400V high power thyristor module 1200V high power thyristor module High Power Thyristor Modules
|
IXYS[IXYS Corporation]
|
FD2000DU-120 |
MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE HIGH POWER/ HIGH FREQUENCY/ PRESS PACK TYPE HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE 高功率,高频率,按包装类
|
Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric, Corp.
|
SML20W65 SML20B56 |
HIGH POWER TERMINATION 56 A, 200 V, 0.045 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
TT electronics Semelab, Ltd. Seme LAB
|