| PART |
Description |
Maker |
| 3PF0 |
(3PF0 / 3PF8) RECTIFIE
|
Semtech Corporation
|
| MBRS330T3 MBRS360T3 |
surface Mount Schottky Power Rectifie
|
TY Semiconductor Co., Ltd
|
| TMP95C265 E_030331_95CS64_SUMMARY |
16-Bit Microcontroller TLCS-900 Family: 900/H Series
From old datasheet system
|
Toshiba
|
| TMP93PW76 |
16-Bit Microcontroller TLCS-900 Family: 900/L Series
|
Toshiba
|
| TMP96C141B |
16-Bit Microcontroller TLCS-900 Family: 900 Series
|
Toshiba
|
| KBP206 KBP208 |
TECHNICAL SPECIFICATIONS OF SINGLE-PHASE GLASS PASSIVATED BRIDGE RECTIFIE
|
Yea Shin Technology Co., Ltd
|
| APT46GA90JD40 |
High Speed PT IGBT
Insulated Gate Bipolar Transistor - Power MOS 8; Package: ISOTOP®; BV(CES) (V): 900; VCE(sat) (V): 2.5; IC (A): 46; 87 A, 900 V, N-CHANNEL IGBT
|
Microsemi Corporation
Microsemi, Corp.
|
| MRFIC2101 |
900 MHz TX-MIXER/EXCITER SILICON MONOLITHIC INTEGRATED CIRCUIT
|
Motorola, Inc
|
| 2SK3077 2SK307707 |
SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
|
Toshiba Semiconductor
|
| MICRF003 MICRF003BM MICRF033BM MICRF003/033 |
RES, 14.3K, 1/16W, TKF, 1%, 0603
QwikRadiotm 900 MHz UHF Receiver Preliminary Information
QwikRadio™ 900 MHz UHF Receiver
|
Micrel Semiconductor,Inc.
MICREL[Micrel Semiconductor]
|
| ERD51-12 RD51-09 |
9 A, 1200 V, SILICON, RECTIFIER DIODE
9 A, 900 V, SILICON, RECTIFIER DIODE
|
FUJI ELECTRIC CO LTD
|
