| PART |
Description |
Maker |
| K9F1208Q0A-XXB0 K9F1208Q0B K9F1208Q0A-DIB0 K9F1208 |
64M x 8 bit NAND flash memory, 2.7 - 3.6V
512Mb/256Mb 1.8V NAND Flash Errata
64M x 8 bit NAND flash memory, 1.70 - 1.95V
32M x 16 bit NAND flash memory, 2.7 - 3.6V
32M x 16 bit NAND flash memory, 1.70 - 1.95V
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K4G08U1M |
256M x 8 Bit / 128M x 16 Bit / 512M x 8 Bit NAND Flash Memory
|
SAMSUNG
|
| K9F2808U0B-DCB0 K9F2808Q0B-DIB0 K9F2808U0B-YIB0 K9 |
16M x 8 Bit / 8M x 16 Bit NAND Flash Memory
16M x 8 Bit NAND Flash Memory 1,600 × 8位NAND闪存
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| K9NBG08U5A |
(K9xxG08UxA) 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory
|
Samsung semiconductor
|
| CD4011BT CD4011BDTR 5962R9662101TXC 5962R9662101TC |
16-Bit Bus Transceiver And Register With 3-State Outputs 56-SSOP -40 to 85 4000/14000/40000 SERIES, QUAD 2-INPUT NAND GATE, CDIP14
CMOS Quad 2-Input NAND Gate
|
Intersil, Corp.
Intersil Corporation
|
| K9K1208Q0C |
64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
|
Samsung semiconductor
|
| K9F1G08R0A K9K2G08U1A K9F1G08U0A |
128M x 8 Bit / 256M x 8 Bit NAND Flash Memory
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
| K9K8G08U0A-Y K9WAG08U1A-Y K9NBG08U5A K9NBG08U5A-P |
1G X 8 BIT / 2G X 8 BIT / 4G X 8 BIT NAND FLASH MEMORY
|
SAMSUNG[Samsung semiconductor]
|
| M74HC20 M74HC20RM13TR M74HC20TTR M74HC20B1R M74HC2 |
DUAL 4-INPUT NAND GATE
DUAL 4-INPUT NAND GATE
10-Bit, 3 or 9 us DAC, Serial Input, Pgrmable Settling Time/Pwr Consumption, Ultra Low Power 8-MSOP 0 to 70
|
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| 5962F9863101VXC ACS30K ACS21D ACS30KMSR-03 ACS21K |
Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, CDFP14
Radiation Hardened 8-Input NAND Gate 8-INPUT NAND GATE, UUC11
RES, NETWORK SMT 100R 5% 1/16W 25V, 0603X4
Quadruple Bus Buffer Gate With 3-State Outputs 14-SOIC 0 to 70
|
Intersil, Corp.
Intersil Corporation
|
