| PART |
Description |
Maker |
| IRGPC40 IRGPC40F |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=27A)
|
IRF[International Rectifier]
|
| IRG4PC50U IRG4PC50U-E |
55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管（VCES和\u003d 600V电压的Vce（on）典\u003d 1.65V的，@和VGE \u003d 15V的，集成电路\u003d 27A条）
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| B592-2T B593-2T B534E2T B634E2T B543E2T B512E2T B5 |
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|240V V(RRM)|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|280V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|440V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|280V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|240V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|46A I(T)
THYRISTOR MODULE|AC SWITCH|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|240V V(RRM)|46A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|240V V(RRM)|27A I(T)
THYRISTOR MODULE|AC SWITCH|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|120V V(RRM)|27A I(T)
THYRISTOR MODULE|SCR|DUAL|INDEPENDENT|440V V(RRM)|27A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|440V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |加利福尼亚州| 440V五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|120V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD |消委会| 120伏特五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|280V V(RRM)|27A I(T) 晶闸管模块|桥|半CNTLD | 280伏特五（无线资源管理）| 27A条疙（T
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|440V V(RRM)|46A I(T) 晶闸管模块|桥|半CNTLD |消委会| 440V五（无线资源管理）| 46A条疙（T
|
ITT, Corp.
Crydom, Inc.
Astrodyne, Inc.
California Eastern Laboratories, Inc.
|
| APT5018BFLL APT5018SFLL |
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS 电源MOS 7TM是一个低损耗，高电压，N沟道增强模式的新一代功率MOSFET
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS
POWER MOS 7 500V 27A 0.180 Ohm
|
Advanced Power Technology, Ltd.
|
| APT6032AVR |
POWER MOS V 600V 17.5A 0.320 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6037HVR |
POWER MOS V 600V 15.5A 0.370 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6011B2VFR |
POWER MOS V 600V 49A 0.110 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
Advanced Power Technology
|
| APT6020LVR |
POWER MOS V 600V 30A 0.200 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT6015LVFR |
POWER MOS V 600V 38A 0.150 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
