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| Datasheet File OCR Text: |
| NTE477 Silicon NPN Transistor RF Power Output Description: The NTE477 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in VHF band mobile radio applications. Features: D High power gain: Gpe 8.2dB @ VCC = 13.5V; VO = 40W; t = 175MHz D Emitter ballasted construction and gold metallization for high reliability, and good performances D Low thermal resistance ceramic package with flange D Ability of withstanding more than 20:1 load VSWR when operated at VCC = 15.2V, PO = 40W, f = 175MHz, TC = 25C Applications: 30 to 35 watts output power amplifiers in VHF band mobile radio applications. Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4V Collector-Emitter Voltage (RBE = ), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Collector Dissipation, PC TA = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5W TC = +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75W Junction Temperature, Tj . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33.3C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2C/W Electrical Characteristics: (TC = +25C unless otherwise specified) Parameter Emitter-Base Breakdown Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Symbol Test Conditions Min 3 35 17 Typ - - - Max Unit - - - V V V V(BR)EBO IE = 10mA, IO = 0 V(BR)CBO IO = 10mA, IE = 0 V(BR)CEO IO = 0.1A, RBE = Electrical Characteristics (Cont'd): (TC = +25C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current DC Forward Current Gain Output Power Symbol ICBO IEBO hFE PO Test Conditions VOB = 15V, IE = 0 VEB = 3V, IO = 0 VCE = 10V, IC = 0.2A VCC = 13.5V Pin = 6W, f = 175MHz Min - - 10 40 60 Typ - - 60 45 70 Max Unit 2.5 2 180 - - mA mA - W % .205 (5.18) .215 (5.48) .122 (3.1) Dia E .405 (10.3) Min B C E .155 (3.94) .500 (12.7) Dia .005 (0.15) .270 (6.85) .160 (4.06) .725 (18.43) .975 (24.78) |
Price & Availability of NTE477
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