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  Datasheet File OCR Text:
 (R)
BUL49D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s s
s s
NPN TRANSISTOR HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED HIGH RUGGEDNESS
2 3
APPLICATIONS s ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS s FLYBACK AND FORWARD SINGLE TRANSISTOR LOW POWER CONVERTERS DESCRIPTION The BUL49D is manufactured using high voltage Multi Epitaxial Planar technology for high switching speeds and medium voltage capability. The BUL49D is designed for use in electronic transformers for halogen lamps.
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CES V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Emitter Voltage (VBE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (I C = 0, IB < 2.5 A, t p < 10s, T J < 150 o C) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at Tc = 25 C Storage T emperature Max. O perating Junction Temperature
o
Value 850 450 BV EBO 5 10 2 4 80 -65 to 150 150
Uni t V V V A A A A W
o o
C C
May 1999
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BUL49D
THERMAL DATA
R t hj-ca se R t hj- amb Thermal Resistance Junction-Case Thermal Resistance Junction-Ambient Max Max 1.56 62.5
o o
C/W C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symb ol I CES I EBO BV EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Emitter-Base Breakdown Voltage (I C = 0) Collector-Emitter Sustaining Voltage (I B = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain Maximum Collector Emitter Voltage Without Snubber RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 850 V V CE = 850 V V EB = 9 V I E = 10mA 10 T j = 125 o C Min. Typ . Max. 100 500 100 18 Un it A A A V
V CEO(sus)
I C = 10 mA
L = 25 mH
450
V
V CE(sat )
IC = 1 A IC = 2 A IC = 4 A IC = 1 A IC = 4 A I C = 10 mA IC = 7 A IC = 8 A V BB = -2.5 V t p = 10 s
IB = 0.2 A IB = 0.4 A IB = 0.8 A IB = 0.2 A IB = 0.8 A VCE = 5 V V CE = 10 V R BB = 0 L = 50H 10 4 450
0.1
0.3 0.6 1.2 1.0 1.3 40 10
V V V V V
V BE(s at) h F E V CEW
V
ts tf ts tf Vf
IC = 2 A V CC = 250 V I B(o n) = I B(of f) = 0.4 A IC = 4 A V BE(of f) = -5 V V CL = 300 V I Bon = 0.8 A R BB = 0 L = 1 mH
2
3 0.8 0.6 50 1.3 100 1.5
s s s ns V
Diode F orward Voltage I C = 3 A
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BUL49D
Safe Operating Areas Derating Curve
DC Current Gain
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
3/6
BUL49D
Inductive Fall Time Inductive Storage Time
Reverse Biased SOA
4/6
BUL49D
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
P011C
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BUL49D
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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Price & Availability of BUL49D
DigiKey

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STMicroelectronics TRANS NPN 450V 5A TO220 10000: USD0.26588
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100: USD0.4786
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BUL49DFP
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Future Electronics

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