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DATA SHEET
SILICON TRANSISTOR
2SC3663
NPN EPITAXIAL SILICON TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURES
* Low-voltage, low-current, low-noise and high-gain NF = 3.0 dB TYP. GA = 3.5 dB TYP. cordless phones, etc. * Gold electrode gives high reliability. * Mini mold package, ideal for hybrid ICs. @VCE = 1 V, IC = 250 PA, f = 1.0 GHz @VCE = 1 V, IC = 250 PA, f = 1.0 GHz
PACKAGE DIMENSIONS (in mm)
0.4 +0.1 -0.05
2.8 0.2 1.5 0.65-0.15
+0.1
* Ideal for battery drive of pagers, compact radio equipment,
0.95 0.95 2.9 0.2
B
E
C
ABSOLUTE MAXIMUM RATINGS (TA = 25 qC)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 15 8 2 5 50 150 65 to +150 UNIT V V V mA mW qC qC
PIN CONNECTIONS E: Emitter B: Base C: Collector Marking: R62
0.3
Marking
1.1 to 1.4
ELECTRICAL CHARACTERISTICS (TA = 25 qC)
PARAMETER Collector Cut-off Current Emitter Cut-off Current DC Current Gain Gain Bandwidth Product Insertion Power Gain Maximum Available Gain Noise Figure Associated Power Gain Collector Capacitance SYMBOL ICBO IEBO hFE fT S21e MAG NF GA Cob
Note 2
TEST CONDITIONS VCB = 5 V, IE = 0 VEB = 1 V, IC = 0 VCE = 1 V, IC = 250 PA, pulse VCE = 1 V, IC = 1 mA VCE = 1 V, IC = 1 mA, f = 1 GHz VCE = 1 V, IC = 1 mA, f = 1 GHz VCE = 1 V, IC = 250 PA, f = 1.0 GHz VCE = 1 V, IC = 250 PA, f = 1.0 GHz VCB = 1 V, IE = 0, f = 1.0 MHz
MIN.
TYP.
MAX. 0.1 0.1
0 to 0.1
0.16 +0.1 -0.06
50
100 4
250 GHz dB dB 4.5 dB dB 0.6 pF
4.0
6.5 12.5 3.0 3.5 0.4
Note Measured using 3-pin bridge, with emitter pin connected to the bridge guard pin.
Document No. P10406EJ1V0DS00 (1st edition) Date Published August 1997 N Printed in Japan
(c)
0.4 +0.1 -0.05
UNIT
PA PA
1997
2SC3663
hFE CLASSIFICATION
RANK Marking hFE K/PNote R62 50 to 250
Note Existing rank classification/newly added rank
2
2SC3663
TYPICAL CHARACTERISTICS (TA = 25 qC)
GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT VCE = 1 V 10 8 6 4 10 INSERTION POWER GAIN vs. FREQUENCY VCE = 1 V IC = 1 mA
fT - Gain Bandwidth Product - GHz
|S21e|2 - Insertion Power Gain - dB
5
2
1 0.1
1 IC - Collector Current - mA
10
0 0.1
1 f - Frequency - GHz
10
MAXIMUM AVAILABLE GAIN vs. FREQUENCY VCE = 1 V IC = 1 mA
INSERTION POWER GAIN vs. COLLECTOR CURRENT
MAG - Maximum Available Gain - dB
|S21e|2 - Insertion Power Gain - dB
40
10
20
20
5
10
0 0.1
1 f - Frequency - GHz
10
0 0.1
0 1 IC - Collector Current - mA 10
NOISE FIGURE AND POWER GAIN AT OPUTIMUM NF vs. COLLECTOR CURRENT VCE = 1 V f = 1.0 GHz
GA - Associated Power Gain - dB NF - Noise Figure - dB
10
GA
5
NF
0
0.1
1 IC - Collector Current - mA
10
3
MAG - Maximum Available Gain - dB
VCE = 1 V f = 1.0 GHz
0.1
0.2
0.1
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 RD LOAD A 0.4 0.0TOR 3 HS TOWLE OF REFLECTION COEFFCIENT IN 6 7 DEG 0.0 T ANG 4 G0 0.4 REE EN 0 .4 0 S 04AVEL -16 0.0 6 0. W 5 15 0.4 5 0 0.4 5 0 15 - 5 0.0
0.1
0.3
0.3
THS 0 0.01 0.49 0.02 TOWARD 0.48 0 0.49 0.01 0.0 GENE 7 0.48 3 RA 0.4 0.02 RD LOAD A 0.4 0.0TOR 3 HS TOWLE OF REFLECTION COEFFCIENT IN 6 7 DEG 0.0 T ANG 4 G0 0.4 REE EN 0.4 0 S 04AVEL -16 0.0 6 0. W 5 15 0.4 5 0 0.4 5 0 15 - 5 0.0 0. 4 0 POS .4 6 0.1 NT 14 0.4 6 00 E ITIV 40 ON 0 ER 4 MP 0. -1 EA CO C
0.1
44 0. 06 40 0. -1
0.1
0.3
0. 4
0.2
4
4
0.
0.
NE G
0.4 0.0 2 8 0 00 .43 0 -1 .07 30
0 .4 0.0 2 8 0 00 .43 0 -1 .07 30
NE G
0
12 0
-
-1 2
0.4 1 0.0 9
-11 0
0.10 0.40 110
0.10 0.40 110
0.40 0.10 -11 0
0.8
0.6
0.8
0.8
0.40 0.10
0.7
0.4 1 0.0 9
0.38 0.39 0.12 0.11 -100
0.38 0.39 0.12 0.11 -100
-90
0.2
-90
0.2
0.2
0.2
0.4
0.4
0.13 0.37
0.4
0.13 0.37
0.37 0.13
0.37 0.13
0.6
0.6
1.2
1.2
0.6
0.4
0.6
8
0.6
0.
0.8
0
2.0
1.
1.
0
1.
0.14 0.36 80
0.14 0.36 80
0.36 0.04 -80
0.36 0.04 -80
1.88 0. 1.6 1.4
1.6
0
1.
0
0
1.
1.8 2.0
1.4
0.8
1.2
0.8
1.2
0.
0.
1.4
0.2
1.4
8
-70
0.35 0.15
0.35 0.15 -70
0
0.1 6 0.3 4
4 0.3 6 0.1
-6
0.1
0.1 0.3 7 3
0.1 0.3 7 3
3 0.3 7 0.1
3 0.3 7
2.0
4.0 5.0
2.0
-6
0
0
S22
1.8
4 0.3 6 0.1
0.1 6 0.3 4
1.8
0
-5
-5
32 18 0.
0.
0.
0
3.
4.0
4.0
6.0
10
10
20
20
50
1 0.2 9 0.2 30
0.2 GHz
0.23 0.27
0.2 GHz
0.2
0.2
2
8 20
10
0.24 0.26
0.25 0.25
0
0.26 0.24
-10
0.2 7 0.2 0.23 8 0.2 2 -20
0. 2 00 9 0.2 0.3 1 -3 0.2 0 0 0
1 0.2 9 0.2
0.4 0.6 0.8
50
0 0 .2 0 0 .3
0 0.2 0 0.3
50
10
6.0
30
20
6.0
20 50
20
10
19 0. 31 0.
40
-4
0
0. 0. 31 19
19 0. 31 0.
40
10
3.
3.
0
1.8 1.4 1.0
32 18 0.
0.24 0.23 0.26 2 0.2 0.27 8 10 0.2 20
0.25 0.25
0
0.26 0.24
-10
0.27 0.23
0.2 8 0.2 2 -20
0. 2 00 9 0.2 0.3 1 -3 0.2 0 0 0
-4
0
0. 0. 31 19
4
WAVELE NG WAVELE NG
0.2 0.2
0.3
0. 0. 06 44
0.
0.
0.
07
0.
07 43 0. 0 13
4
(
0.2
E NC TA AC - JX- - RE --ZO
0. 5
8 0.0 2 0.4
0. 5
E IV AT
(
N
0. 5
)
0.2
O
( -Z-+-J-XTANCE CO ) MPO
E IV AT
ENT ON MP CO CE AN T AC - JX- - RE --ZO
(
)
POS 14 ITIV 0 ER EA CT +A -- JX NCE ZO-- CO M PO N
)
0.3
5 0.
43 0 13
T EN
T EN
0.3
0.6
12
8 0.0 2 0.4 20 1
0.6
0
0.6
9 0.0 1 0.4
9 0.0 1 0.4
0.4
0.7
0.7
0.4
0.6
0.5
0.5 0.6
0.7
0.8
0.11 0.39 100
0.11 0.39 100
0.7 0.8
0.9
0.7
()
0.9
()
0.9
0.8
0.9
R --- ZO
R --- ZO
0.12 0.38
0.12 0.38
0.9
0.9
REACTANCE COMPONENT
REACTANCE COMPONENT
1.0
90
90
1.0
0.2
1.0 1.0
1.0
0.2
1.0
0.4
0.4
0.6
0.4
0.4
0.6
0.6
0.2
0.8
8
1.4
1. 0
1.
1.6 1.8 2.0
0 1.
0
1.4
1.4
70
0.15 0.35
0.15 0.35
70
1.6
1.6
3.0
1.6
1.8
1.6
3.0
1.8
2.0
4.0
2.0
6 00
6 00
S11
1.2 1.0 0.8 0.6
2.0 1.6 1.2
50
0. 0. 18 32
0
5.0
50
0. 0. 18 32
3. 0
10
0.4
4.0
4.0
6.0
20
50
50
VCE = 1 V IC = 1 mA
VCE = 1 V IC = 1 mA
2SC3663
2SC3663
[MEMO]
5
2SC3663
[MEMO]
6
2SC3663
[MEMO]
7
2SC3663
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance. Anti-radioactive design is not implemented in this product.
M4 96. 5

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