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NTTS2P02R2 Power MOSFET -2.4 Amps, -20 Volts
Single P-Channel Micro8t
Features
* * * * * *
Ultra Low RDS(on) Higher Efficiency Extending Battery Life Logic Level Gate Drive Miniature Micro-8 Surface Mount Package Diode Exhibits High Speed, Soft Recovery Micro8 Mounting Information Provided
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Applications
* Power Management in Portable and Battery-Powered Products, i.e.:
Cellular and Cordless Telephones and PCMCIA Cards
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Gate-to-Source Voltage - Continuous Thermal Resistance - Junction-to-Ambient (Note 1.) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 3.) Thermal Resistance - Junction-to-Ambient (Note 2.) Total Power Dissipation @ TA = 25C Continuous Drain Current @ TA = 25C Continuous Drain Current @ TA = 70C Pulsed Drain Current (Note 3.) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = -20 Vdc, VGS = -4.5 Vdc, Peak IL = -5.0 Apk, L = 28 mH, RG = 25 ) Maximum Lead Temperature for Soldering Purposes for 10 seconds Symbol VDSS VGS RJA PD ID ID IDM RJA PD ID ID IDM TJ, Tstg EAS Value -20 8.0 160 0.78 -2.4 -1.92 -20 88 1.42 -3.25 -2.6 -30 -55 to +150 350 Unit V V C/W W A A A C/W W A A A C mJ 8
-2.4 AMPERES -20 VOLTS RDS(on) = 90 mW
Single P-Channel D
G S
MARKING DIAGRAM
1 Micro8 CASE 846A STYLE 1
YWW AD
Y WW AD TL 260 C Source Source Source Gate
= Year = Work Week = Device Code
PIN ASSIGNMENT
1 2 3 4 8 7 6 5 Drain Drain Drain Drain
1. Minimum FR-4 or G-10 PCB, Steady State. 2. Mounted onto a 2 square FR-4 Board (1 sq. 2 oz Cu 0.06 thick single sided), Steady State. 3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
Top View
ORDERING INFORMATION
Device NTTS2P02R2 Package Micro8 Shipping 4000/Tape & Reel
(c) Semiconductor Components Industries, LLC, 2000
1
December, 2000 - Rev. 4
Publication Order Number: NTTS2P02R2/D
NTTS2P02R2
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) *
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = -250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -16 Vdc, TJ = 25C) (VGS = 0 Vdc, VDS = -16 Vdc, TJ = 125C) Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = -20 Vdc, TJ = 25C) Gate-Body Leakage Current (VGS = -8 Vdc, VDS = 0 Vdc) Gate-Body Leakage Current (VGS = +8 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = -250 Adc) Temperature Coefficient (Negative) Static Drain-to-Source On-State Resistance (VGS = -4.5 Vdc, ID = -2.4 Adc) (VGS = -2.7 Vdc, ID = -1.2 Adc) (VGS = -2.5 Vdc, ID = -1.2 Adc) Forward Transconductance (VDS = -10 Vdc, ID = -1.2 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 4. & 5.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge BODY-DRAIN DIODE RATINGS (Note 4.) Diode Forward On-Voltage Reverse Recovery Time (IS = -2.4 Adc, VGS = 0 Vdc, 2 4 Ad Vd dIS/dt = 100 A/s) Reverse Recovery Stored Charge 4. Indicates Pulse Test: Pulse Width = 300 s max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. * Handling precautions to protect against electrostatic discharge is mandatory. (IS = -2.4 Adc, VGS = 0 Vdc) (IS = -2.4 Adc, VGS = 0 Vdc, TJ = 125C) VSD trr ta tb QRR - - - - - - -0.88 -0.75 37 16 21 0.025 -1.0 - - - - - C Vdc ns (VDS = -16 Vdc, VGS = -4.5 Vdc, ID = -2.4 Adc) 2 4 Ad ) (VDD = -10 Vdc, ID = -1.2 Adc, 10 1.2 VGS = -2.7 Vdc, RG = 6.0 ) (VDD = -10 Vdc, ID = -2.4 Adc, 10 2.4 VGS = -4.5 Vdc, RG = 6.0 ) td(on) tr td(off) tf td(on) tr td(off) tf Qtot Qgs Qgd - - - - - - - - - - - 10 31 33 29 15 40 35 35 10 1.5 5.0 - - - - - - - - 18 - - nC ns ns (VDS = -16 Vd VGS = 0 Vd 16 Vdc, Vdc, f = 1.0 MHz) Ciss Coss Crss - - - 550 200 100 - - - pF VGS(th) -0.5 - RDS(on) - - - gFS 2.0 0.070 0.100 0.110 4.2 0.090 0.130 - - Mhos -0.90 2.5 -1.4 - Vdc mV/C V(BR)DSS -20 - IDSS - - IDSS - IGSS - IGSS - - 100 - -100 nAdc - -5.0 nAdc - - -1.0 -25 Adc - -12.7 - - Vdc mV/C Adc Symbol Min Typ Max Unit
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NTTS2P02R2
4 VGS = -2.1 V -ID, DRAIN CURRENT (AMPS) 3 VGS = -10 V VGS = -4.5 V VGS = -2.5 V -ID, DRAIN CURRENT (AMPS) TJ = 25C 5 VDS > = 10 V 4
VGS = -1.9 V
3
2 VGS = -1.7 V 1 VGS = -1.5 V 0 0 2 4 6 8 10 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
2
TJ = 25C
1 0 1
TJ = 100C 1.5
TJ = 55C 2 2.5 3
-VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Figure 1. On-Region Characteristics.
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
Figure 2. Transfer Characteristics.
0.2 TJ = 25C 0.15
0.12 TJ = 25C 0.1 VGS = -2.7 V 0.08 VGS = -4.5 V 0.06
0.1
0.05
0 2 4 6 8 -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
0.04 1 1.5 2 2.5 3 3.5 4 4.5 -ID, DRAIN CURRENT (AMPS)
Figure 3. On-Resistance vs. Gate-to-Source Voltage.
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
Figure 4. On-Resistance vs. Drain Current and Gate Voltage.
1.6 ID = -2.4 A VGS = -4.5 V
1000 VGS = 0 V -IDSS, LEAKAGE (nA) 100 TJ = 100C 10 TJ = 25C 1 TJ = 125C
1.4
1.2
1
0.8
0.1
0.6 -50
0.01 -25 50 100 125 0 25 75 TJ, JUNCTION TEMPERATURE (C) 150 0 4 8 12 16 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 20
Figure 5. On-Resistance Variation with Temperature.
Figure 6. Drain-to-Source Leakage Current vs. Voltage.
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NTTS2P02R2
1500 VDS = 0 V C, CAPACITANCE (pF) 1200 Ciss VGS = 0 V TJ = 25C 5 QT 4 20 18 16 14 3 Q1 2 ID = -2.4 A TJ = 25C Q2 VGS 12 10 8 6 1 0 0 2 4 6 8 10 12 14 Qg, TOTAL GATE CHARGE (nC) VDS 4 2 0 -VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) -VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
900 Crss 600 Ciss
300
Coss Crss 10 5 0 -VGS -VDS 5 10 15 20
0
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 8. Gate-to-Source and Drain-to-Source Voltage versus Total Charge
Figure 7. Capacitance Variation
1000 VDD = -10 V ID = -1.2 A VGS = -2.7 V t, TIME (ns) t, TIME (ns) 100
td (off) tr tf
100 tr td (off) td (on) 10 1.0 10 RG, GATE RESISTANCE (OHMS) 100 tf
10
td(on)
VDD = -10 V ID = -2.4 A VGS = -4.5 V 1.0 1.0 10 RG, GATE RESISTANCE (OHMS) 100
Figure 9. Resistive Switching Time Variation versus Gate Resistance
2 -IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C
Figure 10. Resistive Switching Time Variation versus Gate Resistance
1.6
di/dt IS
1.2
ta
trr tb TIME
0.8 tp 0.4 0 0.4 IS 0.25 IS
0.5
0.6
0.7
0.8
0.9
1
Figure 12. Diode Reverse Recovery Waveform
-VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 11. Diode Forward Voltage versus Current http://onsemi.com
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NTTS2P02R2
1 Rthja(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
D = 0.5
0.2 Normalized to Rja at Steady State (1 inch pad) 0.0125 0.0563 0.110 0.273 0.113 0.436
0.1
0.1
0.05 0.02 0.01 0.021 F 0.137 F 1.15 F 2.93 F 152 F 261 F
Single Pulse 0.01 1E-03
1E-02
1E-01
1E+00 t, TIME (s)
1E+03
1E+02
1E+03
Figure 13. FET Thermal Response.
INFORMATION FOR USING THE Micro-8 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to ensure proper solder connection interface between the board and the package. With the correct pad geometry, the packages will self-align when subjected to a solder reflow process.
0.041 1.04
0.208 5.28
0.126 3.20
0.015 0.38
0.0256 0.65 inches mm
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NTTS2P02R2
SOLDERING PRECAUTIONS The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10C. * The soldering temperature and time shall not exceed 260C for more than 10 seconds. * When shifting from preheating to soldering, the maximum temperature gradient shall be 5C or less. * After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. * Mechanical stress or shock should not be applied during cooling. * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device.
TYPICAL SOLDER HEATING PROFILE For any given circuit board, there will be a group of control settings that will give the desired heat pattern. The operator must set temperatures for several heating zones and a figure for belt speed. Taken together, these control settings make up a heating "profile" for that particular circuit board. On machines controlled by a computer, the computer remembers these profiles from one operating session to the next. Figure 14 shows a typical heating profile for use when soldering a surface mount device to a printed circuit board. This profile will vary among soldering systems, but it is a good starting point. Factors that can affect the profile include the type of soldering system in use, density and types of components on the board, type of solder used, and the type of board or substrate material being used. This profile shows temperature versus time. The line on the graph shows the actual temperature that might be experienced on the surface of a test board at or near a central solder joint. The two profiles are based on a high density and a low density board. The Vitronics SMD310 convection/infrared reflow soldering system was used to generate this profile. The type of solder used was 62/36/2 Tin Lead Silver with a melting point between 177-189C. When this type of furnace is used for solder reflow work, the circuit boards and solder joints tend to heat first. The components on the board are then heated by conduction. The circuit board, because it has a large surface area, absorbs the thermal energy more efficiently, then distributes this energy to the components. Because of this effect, the main body of a component may be up to 30 degrees cooler than the adjacent solder joints.
STEP 1 PREHEAT ZONE 1 "RAMP" 200C
STEP 2 STEP 3 VENT HEATING "SOAK" ZONES 2 & 5 "RAMP"
STEP 4 HEATING ZONES 3 & 6 "SOAK"
DESIRED CURVE FOR HIGH MASS ASSEMBLIES 150C
160C
STEP 5 STEP 6 STEP 7 HEATING VENT COOLING ZONES 4 & 7 205 TO 219C "SPIKE" PEAK AT 170C SOLDER JOINT
150C 100C 100C DESIRED CURVE FOR LOW MASS ASSEMBLIES 5C 140C
SOLDER IS LIQUID FOR 40 TO 80 SECONDS (DEPENDING ON MASS OF ASSEMBLY)
TIME (3 TO 7 MINUTES TOTAL)
TMAX
Figure 14. Typical Solder Heating Profile
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NTTS2P02R2
TAPE & REEL INFORMATION
Micro-8 Dimensions are shown in millimeters (inches)
2.05 (.080) 1.95 (.077) PIN NUMBER 1 4.10 (.161) 3.90 (.154) B B A
1.60 (.063) 1.50 (.059) 1.85 (.072) 1.65 (.065) 0.35 (.013) 0.25 (.010)
12.30 11.70 (.484) (.461)
5.55 (.218) 5.45 (.215) 3.50 (.137) 3.30 (.130)
A
FEED DIRECTION
5.40 (.212) 5.20 (.205)
8.10 (.318) 7.90 (.312)
1.60 (.063) 1.50 (.059) TYP.
1.50 (.059) 1.30 (.052)
SECTION A-A
SECTION B-B
NOTES: 1. CONFORMS TO EIA-481-1. 2. CONTROLLING DIMENSION: MILLIMETER.
18.4 (.724) MAX. NOTE 3
13.2 (.52) 12.8 (.50) 330.0 (13.20) MAX. 50.0 (1.97) MIN.
NOTES: 1. CONFORMS TO EIA-481-1. 2. CONTROLLING DIMENSION: MILLIMETER. 3. INCLUDES FLANGE DISTORTION AT OUTER EDGE. 4. DIMENSION MEASURED AT INNER HUB.
14.4 (.57) 12.4 (.49) NOTE 4
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NTTS2P02R2
PACKAGE DIMENSIONS
Micro8 CASE 846A-02 ISSUE E
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. DIM A B C D G H J K L MILLIMETERS MIN MAX 2.90 3.10 2.90 3.10 --1.10 0.25 0.40 0.65 BSC 0.05 0.15 0.13 0.23 4.75 5.05 0.40 0.70 SOURCE SOURCE SOURCE GATE DRAIN DRAIN DRAIN DRAIN INCHES MIN MAX 0.114 0.122 0.114 0.122 --0.043 0.010 0.016 0.026 BSC 0.002 0.006 0.005 0.009 0.187 0.199 0.016 0.028
-A-
K
-B-
PIN 1 ID
G D 8 PL 0.08 (0.003)
M
TB
S
A
S
-T-
SEATING PLANE
0.038 (0.0015) H
C J L
STYLE 1: PIN 1. 2. 3. 4. 5. 6. 7. 8.
Micro8 is a trademark of International Rectifier.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
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NTTS2P02R2/D

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