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 MSD42SWT1
Preferred Device
NPN Silicon General Purpose High Voltage Transistor
This NPN Silicon Planar Transistor is designed for general purpose amplifier applications. This device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications.
Features http://onsemi.com
COLLECTOR 3
* Pb-Free Package is Available
MAXIMUM RATINGS (TA = 25C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous Symbol V(BR)CBO V(BR)CEO V(BR)EBO IC Value 300 300 6.0 150 Unit Vdc Vdc Vdc mAdc 1 BASE
2 EMITTER
3 1 2
THERMAL CHARACTERISTICS
Rating Power Dissipation (Note 1) Junction Temperature Storage Temperature Range Symbol PD TJ Tstg Max 150 150 -55 to +150 Unit mW C C
SC-70 (SOT-323) CASE 419 STYLE 3
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected.
MARKING DIAGRAM
ELECTRICAL CHARACTERISTICS
Characteristic Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = 100 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = 300 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = 6.0 Vdc, IB = 0) DC Current Gain (Note 2) (VCE = 10 Vdc, IC = 1.0 mAdc) (VCE = 10 Vdc, IC = 30 mAdc) Collector-Emitter Saturation Voltage (Note 2) (IC = 200 mAdc, IB = 2.0 mAdc) Symbol V(BR)CEO V(BR)CBO V(BR)EBO ICBO IEBO Min 300 300 6.0 - - Max - - - 0.1 0.1 Unit Vdc Vdc Vdc mA mA - hFE1 hFE2 VCE(sat) 25 40 - 200 - 0.5 Vdc 1
D4 M G G
D4 = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location.
ORDERING INFORMATION
Device MSD42SWT1 Package Shipping
SC-70/SOT-323 3000/Tape & Reel
MSD42SWT1G SC-70/SOT-323 3000/Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 2. Pulse Test: Pulse Width 300 ms, D.C. 2%.
(c) Semiconductor Components Industries, LLC, 2006
1
January, 2006 - Rev. 1
Publication Order Number: MSD42SWT1/D
MSD42SWT1
PACKAGE DIMENSIONS
SC-70 (SOT-323) CASE 419-04 ISSUE M
D e1
3
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.7 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.425 REF 2.10 2.40 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.017 REF 0.083
HE
1 2
E
b e
DIM A A1 A2 b c D E e e1 L HE
MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20
MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047
MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055
2.00
0.079
0.095
A 0.05 (0.002)
A2 L
c
STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR
A1
SOLDERING FOOTPRINT*
0.65 0.025 0.65 0.025
1.9 0.075 0.9 0.035 0.7 0.028
SCALE 10:1
mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative.
http://onsemi.com
2
MSD42SWT1/D


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Price & Availability of MSD42SWT1
Newark

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MSD42SWT1G
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onsemi Bipolar Transistor, Npn, 300V; Transistor Polarity:Npn; Collector Emitter Voltage Max:300V; Continuous Collector Current:150Ma; Power Dissipation:150Mw; Transistor Mounting:Surface Mount; No. Of Pins:3Pins; Transition Frequency:- Rohs Compliant: Yes |Onsemi MSD42SWT1G 30000: USD0.032
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