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| FAN73832 Half-Bridge Gate-Drive IC February 2007 FAN73832 Features Half-Bridge Gate-Drive IC Description The FAN73832 is a half-bridge, gate-drive IC with shutdown and programmable dead-time control functions for driving MOSFETs and IGBTs, operating up to +600V. Fairchild's high-voltage process and common-mode noise canceling technique provide stable operation of high-side driver under high dv/dt noise circumstances. An advanced level-shift circuit allows high-side gate driver operation up to VS=-9.8V (typical) for VBS=15V. The UVLO circuits for both channels prevent malfunction when VDD and VBS are lower than the specified threshold voltage. Output drivers typically source/sink 350mA/650mA, respectively, which is suitable for all kinds of half- and full-bridge inverters. Floating Channel for Bootstrap Operation to +600V Typically 350mA/650mA Sourcing/Sinking Current Driving Capability for Both Channels Extended Allowable Negative VS Swing to -9.8V for Signal Propagation at VDD=VBS=15V High-Side Output in Phase of IN Signal Built-in UVLO Functions for Both Channels Built-in Common-Mode dv/dt Noise Canceling Circuit Internal 400ns Minimum Dead-Time at RDT=20K Programmable Turn-on Delay-Time Control (Dead-Time) Applications SMPS Motor Drive Inverter Fluorescent Lamp Ballast HID Ballast 8-SOP 8-DIP Ordering Information Part Number FAN73832M(1) FAN73832MX(1) FAN73832N Note: 1. These devices passed wave soldering test by JESD22A-111. Package 8-SOP 8-DIP Pb-Free Yes Operating Temperature Range Packing Method Tube -40C ~ 125C Tape & Reel Tube (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Typical Application Diagrams RBOOT DBOOT VDD FAN73832 1 IN VDC VB HO VS LO 8 7 PWM 2 GND 3 CBOOT PWM IC Control Shutdown RDT DT/ SD 6 5 4 VDD FAN73832 Rev.01 Figure 1. Application Circuit for Half-Bridge Switching Power Supply VDC VCC VDD VB HO VDD VB HO VS PHA PHB SD IN VS IN Forward FAN73832 DT/ SD GND LO FAN73832 Reverse DT/ SD GND LO M DC Motor Controller FAN73832 Rev.01 Figure 2. Application Circuit for Full-Bridge DC Motor Driver (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 2 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Internal Block Diagram 8 UVLO VB DRIVER NOISE CANCELLER R S R Q 7 HO IN 1 HS(ON/ OFF) PULSE GEN ERATOR 6 UVLO VS VDD SCHMITT TRIGGER INPUT 4 DRIVER DT/SD 3 RDTINT DEAD - TIME CONTROL LS(ON/ OFF) DELAY 5 LO 2 GND FAN73832 Rev:00 Figure 3. Functional Block Diagram of FAN73832 (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 3 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Pin Assignments IN GND DT/SD VDD 1 2 3 4 8 7 6 5 VB HO VS LO Figure 4. Pin Configuration (Top View) FAN73832 FAN73832 Rev:00 Pin Definitions Pin # 1 2 3 4 5 6 7 8 Name IN GND DT/SD VDD LO VS HO VB Logic Input Ground Description Dead-Time Control with External Resistor and Shutdown Function Low-Side Supply Voltage Low-Side Driver Output High-Side Floating Supply Return High-Side Driver Output High-Side Floating Supply (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 4 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. TA=25C unless otherwise specified. Symbol VS VB VHO VDD VLO VIN VDT/SD GND dVS/dt PD(2)(3)(4) JA TJ TSTG Notes: Parameter High-side offset voltage High-side floating supply voltage High-side floating output voltage HO Low-side and logic-fixed supply voltage Low-side output voltage LO Logic input voltage (IN) Dead-time and shutdown control voltage Logic ground Allowable offset voltage slew rate Power dissipation Thermal resistance, junction-to-ambient Junction temperature Storage temperature 8-SOP 8-DIP 8-SOP 8-DIP Min. VB-25 -0.3 VS-0.3 -0.3 -0.3 -0.3 -0.3 VDD-25 Max. VB+0.3 625 VB+0.3 25 VDD+0.3 VDD+0.3 5.0 VDD+0.3 50 0.625 1.25 200 100 150 150 Unit V V V V V V V V V/ns W C/W C C 2. Mounted on 76.2 x 114.3 x 1.6mm PCB (FR-4 glass epoxy material). 3. Refer to the following standards: JESD51-2: Integral circuits thermal test method environmental conditions - Natural convection JESD51-3: Low effective thermal conductivity test board for leaded surface mount packages 4. Do not exceed PD under any circumstances. Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol VB VS VDD VHO VLO VIN TA Parameter High-side floating supply voltage High-side floating supply offset voltage Low-side supply voltage High-side (HO) output voltage Low-side (LO) output voltage Logic input voltage (IN) Ambient temperature Condition Min. VS+15 6-VDD 15 VS GND GND -40 Max. VS+20 600 20 VB VDD VDD 125 Unit V V V V V V C (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 5 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Electrical Characteristics VBIAS (VDD, VBS)=15.0V, RDT=20K,TA=25C, unless otherwise specified. The VIN and IIN parameters are referenced to GND. The VO and IO parameters are referenced to VS and COM and are applicable to the respective outputs HO and LO. Symbol IQBS IQDD ISD(5) IPBS IPDD ILK VDDUV+ VBSUV+ VDDUVVBSUVVDDUVH VBSUVH RDTINT VDT VOH VOL IO+ IOVS Parameter Quiescent VBS supply current Quiescent VDD supply current Shutdown supply current Operating VBS supply current Operating VDD supply current Offset supply leakage current VDD and VBS supply under-voltage positive going threshold VDD and VBS supply under-voltage negative going threshold VDD supply under-voltage lockout hysteresis Internal dead-time setting resistance Normal voltage at DT High-level output voltage, VBIAS-VO Low-level output voltage, VO Output high short-circuit pulse current Output low short-circuit pulsed current Allowable negative VS pin voltage for IN signal propagation to HO Logic "1" input voltage Logic "0" input voltage Logic "1" input bias current Logic "0" input bias current Shutdown "1" input voltage Shutdown "0" input voltage Input pull-down resistance VIN=5V VIN=0V Condition VIN=0V or 5V VIN=0V or 5V, RDT=20K DT/SD=GND fIN=20kHz, rms value fIN=20kHz, rms value VB=VS=600V Min. Typ. 35 300 650 400 650 Max. 90 450 900 700 850 10 Unit SUPPLY CURRENT SECTION A POWER SUPPLY SECTION 10.7 10.0 11.6 10.8 0.8 12.5 11.6 V V V DEAD-TIME CONTROL SECTION 20 RDT=20K IO=20mA VO=0V, VIN=5V with PW<10s VO=15V, VIN=0V with PW<10s 250 500 350 650 -9.8 -7.0 3.0 1.0 0.6 K V V V mA mA V GATE DRIVER OUTPUT SECTION LOGIC INPUT SECTION (INPUT and SHUTDOWN) VIH VIL IIN+ IINSD+ 2.9 1.2 50 100 2.0 1.2 2.9 100 V V A A V V K SDRPD Note: 5. This parameter guaranteed by design. (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 6 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Dynamic Electrical Characteristics VBIAS (VDD, VBS)=15.0V, VS=GND, CL=1000pF, RDT=20K and TA = 25C, unless otherwise specified. Symbol tON tOFF tR tF tSD(5) DT1, DT2 DMT Parameter Turn-on propagation delay Turn-off propagation delay Turn-on rise time Turn-off fall time Shutdown propagation delay Dead-time LO OFF to HO ON & HO OFF to LO ON Dead-time matching Conditions VS=0V, RDT=20K VS=0V or 600V(5), RDT=20K CL=1000pF CL=1000pF RDT =20K RDT = 200K RDT = 20K RDT =200K Min. Typ. 580 180 50 30 100 Max. 730 230 100 80 180 500 2.30 60 150 Unit ns 300 1.20 400 1.68 0 0 ns s ns Note: 5. These parameters guaranteed by design. (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 7 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Typical Characteristics 11.6 12.0 11.4 VDDUV+ ,VBSUV+ [V] 11.6 11.4 11.2 11.0 10.8 -40 -20 0 20 40 60 80 100 120 VDDUV- ,VBSUV- [V] 11.8 11.2 11.0 10.8 10.6 10.4 10.2 10.0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 5. VDD/VBS UVLO (+) vs. Temperature Figure 6. VDD/VBS UVLO (-) vs. Temperature 500 100 400 80 IQDD [A] IQBS [A] 300 60 200 40 100 20 0 -40 -20 0 20 40 60 80 100 120 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 7. VDD Quiescent Current vs. Temperature Figure 8. VBS Quiescent Current vs. Temperature 1000 800 800 600 IPDD [A] 600 IPBS [A] -20 0 20 40 60 80 100 120 400 400 200 200 0 -40 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 9. VDD Operating Current vs. Temperature Figure 10. VBS Operating Current vs. Temperature (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 8 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) 100 3.0 2.5 2.0 80 IIN+ [A] 60 VIH [V] -20 0 20 40 60 80 100 120 1.5 1.0 40 20 0.5 0.0 -40 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 11. Logic Input Current vs. Temperature Figure 12. Logic Input High Voltage vs. Temperature 3.0 2.5 3.0 2.5 SD+ BAR [V] 2.0 2.0 1.5 1.0 0.5 0.0 -40 VIL [V] 1.5 1.0 0.5 0.0 -40 -20 0 20 40 60 80 100 120 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 13. Logic Input Low Voltage vs. Temperature Figure 14. SD Positive Threshold vs. Temperature 3.0 2.5 800 600 SD- BAR [V] 1.5 1.0 tON [nsec] -20 0 20 40 60 80 100 120 2.0 400 200 0.5 0.0 -40 0 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 15. SD Negative Threshold vs. Temperature Figure 16. Turn-on Delay Time vs. Temperature (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 9 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Typical Characteristics (Continued) 300 500 DT1, RDT= 20k [nsec] 250 450 tOFF [nsec] 200 150 100 50 0 -40 400 350 -20 0 20 40 60 80 100 120 300 -40 -20 0 20 40 60 80 100 120 Temperature [C] Temperature [C] Figure 17. Turn-off Delay Time vs. Temperature Figure 18. Dead--Time (RDT=20k) vs. Temperature 2.4 2.0 DT1, RDT= 200k [nsec] 2.2 2.0 1.8 1.6 1.4 1.2 -40 1.6 Deadtime [S] 1.2 0.8 0.4 -20 0 20 40 60 80 100 120 0.0 20 40 60 80 100 120 140 160 180 200 Temperature [C] RDT [kohm] Figure 19. Dead Time (RDT=200k) vs. Temperature Figure 20. RDT vs. Dead-Time -6 -8 VS [V] -10 -12 -14 -40 -20 0 20 40 60 80 100 120 Temperature [C] Figure 21. Allowable Negative VS Voltage for Signal Propagation to High Side vs. Temperature (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 10 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Switching Time Definitions +15V 10F 100nF 10F 100nF 1 IN 2 +15V VB HO VS LO 8 7 1nF 6 5 GND HO 3 DT/SD Control SD 20K 4 VDD LO 1nF FAN73832 FAN73832 Rev:00 Figure 22. Switching Time Test Circuit IN HO LO DT/SD DT1 DT2 Shutdown DT2 DT1 Shutdown DT1 FAN73832 Rev.00 Figure 23. Input / Output Waveforms IN 50% tOFF 90% 50% tON 10% 90% LO HO tON 10% tOFF FAN73832 Rev.00 Figure 24. Switching Time Waveform Definitions (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 11 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC 50% DT/SD 90% HO or LO tSD FAN73832 Rev.00 Figure 25. Shutdown Waveform Definition 90% HO DT1 90% LO MDT= |DT1 - DT2| 10% FAN73832 Rev.00 10% DT2 Figure 26. Dead-Time Control Waveform Definition (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 12 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Typical Application Information 1. Normal Operating Consideration The FAN73832 is a single PWM input, half-bridge, gatedrive IC with programmable dead-time and shutdown functions. The dead-time is set with a resistor (RDT) at the DT/SD pin. The wide dead-time programming range provides the flexibility to optimize drive signal timing for a selection of switching devices (MOSFET or IGBT) and applications. The turn-on time delay circuitry (Dead-Time) accommodates resistor values from 20k to 200k with a dead-time proportional to the RDT resistance. If the DT/SD pin voltage decreases below 1.2V in the normal operation, the IC enters shutdown mode. The external dead-time setting resistor (RDT) is at least above 20K for normal operation in typical applications. 3. Layout Consideration For optimum performance of the high- and low-side gate drivers, considerations must be taken during printed circuit board (PCB) layout. 3.1 Supply Capacitors If the output stages are able to quickly turn-on a switching device with a high value of current, the supply capacitors must be placed as close as possible to the device pins (VDD and GND for the ground-tied supply, VB and VS for the floating supply) to minimize parasitic inductance and resistance. 3.2 Gate Drive Loop Current loops behave like an antenna, able to receive and transmit noise. To reduce the noise coupling/emission and improve the power switch turn-on and off performances, gate drive loops must be reduced as much as possible. 2. Under-Voltage Lockout (UVLO) The FAN73832 has an under-voltage lockout (UVLO) protection circuit for high- and low-side channels to prevent malfunction when VDD and VBS are lower than the specified threshold voltage. The UVLO circuitry monitors the supply voltage (VDD) and bootstrap capacitor voltage (VBS) antepenult. 3.3 Ground Plane Ground plane must not be placed under or nearby the high-voltage floating side to minimize noise coupling. (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 13 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Mechanical Dimensions 8-SOP Dimensions are in millimeters (inches) unless otherwise noted. . 1.55 0.20 0.061 0.008 MIN 0.1~0.25 0.004~0.001 0.56 ) 0.022 #1 #8 4.92 0.20 0.194 0.008 5.13 MAX 0.202 ( #4 #5 6.00 0.30 0.236 0.012 +0.10 0.15 -0.05 +0.004 0.006 -0.002 1.80 MAX 0.071 MAX0.10 MAX0.004 3.95 0.20 0.156 0.008 5.72 0.225 0.50 0.20 0.020 0.008 0~ 8 January 2001, Rev. A 8sop225_dim.pdf Figure 27. 8-Lead Small Outline Package (SOP) (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 14 1.27 0.050 0.41 0.10 0.016 0.004 www.fairchildsemi.com FAN73832 Half-Bridge Gate-Drive IC Mechanical Dimensions (Continued) 8-DIP Dimensions are in millimeters (inches) unless otherwise noted. . #1 #8 9.20 0.20 0.362 0.008 9.60 MAX 0.378 #4 #5 2.54 0.100 7.62 0.300 5.08 MAX 0.200 3.40 0.20 0.134 0.008 3.30 0.30 0.130 0.012 0.33 0.013 MIN 0.25 -0.05 0~15 +0.10 0.010 -0.002 September 1999, Rev B +0.004 pdip8_dim.pdf Figure 28. 8-Lead Dual In-Line Package (DIP) (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 15 0.018 0.004 1.524 0.10 0.060 0.004 www.fairchildsemi.com 0.46 0.10 6.40 0.20 0.252 0.008 ( 0.79 ) 0.031 FAN73832 Half-Bridge Gate-Drive IC TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world. ActiveArray Bottomless Build it Now CoolFET CROSSVOLT CTLTM Current Transfer LogicTM DOME 2 E CMOS (R) EcoSPARK EnSigna FACT Quiet SeriesTM (R) FACT (R) FAST FASTr FPS (R) FRFET GlobalOptoisolator GTO (R) HiSeC i-Lo ImpliedDisconnect IntelliMAX ISOPLANAR MICROCOUPLER MicroPak MICROWIRE MSX MSXPro OCX OCXPro (R) OPTOLOGIC (R) OPTOPLANAR PACMAN POP (R) Power220 (R) Power247 PowerEdge PowerSaver PowerTrench Programmable Active Droop (R) QFET QS QT Optoelectronics Quiet Series RapidConfigure RapidConnect ScalarPump SMART START (R) SPM SuperFET SuperSOT -3 SuperSOT -6 SuperSOT -8 TCM (R) The Power Franchise TM (R) TinyLogic TINYOPTO TinyPower TinyWire TruTranslation SerDes (R) UHC UniFET VCX Wire (R) TinyBoost TinyBuck DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only. Rev. I23 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. No Identification Needed Full Production Obsolete Not In Production (c) 2006 Fairchild Semiconductor Corporation FAN73832 Rev. 1.0.2 16 www.fairchildsemi.com |
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